Andrea Cester

ORCID iD
orcid.org/0000-0001-6583-1735
  • Country
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Italy

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Scopus to ORCID (2016-01-24)

  • Keywords
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Organic Electronics,

Sources:
Andrea Cester (2014-06-05)

Photovoltaic Devices,

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Andrea Cester (2014-06-05)

Device Reliability

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Andrea Cester (2014-06-05)

  • Websites
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http://most.dei.unipd.it

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Andrea Cester (2016-03-23)

http://www.dei.unipd.it/~cester

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Andrea Cester (2016-03-23)

  • Other IDs
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Scopus Author ID: 7004063104

Sources:
Scopus to ORCID (2014-06-05)

ResearcherID: H-1683-2015

Sources:
Clarivate Analytics (2015-06-30)

Biography

Andrea Cester is Associate Professor at Dept. of Information Engineering of the Padova University. He graduated in Electronics Engineering at the University of Padova (Italy) with magna cum laude in 1998 working on the ionizing radiation effect on MOS devices. In 2002 he received the Ph.D. degree in Electronic and Telecommunication Engineering from the University of Padova. His Ph.D. thesis was on ultra-thin gate oxide CMOS device physics, technology, and reliability. Since December 2002, he joins the Department of Information Engineering of the Padova University. He is the author or coauthor of more than 160 papers published in international journals and conference proceedings. At present his research activities are focused on: 1) the characterization, reliability study, and modeling of organic electronic materials and devices, ranging from thin-film transistors to organic light-emitting diodes, and organic and hybrid solar cells. 2) the characterization, model and reliability issues of novel high mobility MOS transistors on III-V semiconductor substrate. In the past, his research interests included also: 1) reliability issues of deep submicron CMOS technology: breakdown and hot electron degradation of ultra-thin gate oxide MOS structures. 2) effects of ionizing radiation on ultrathin gate oxides. 3) electrical characterization, reliability and radiation effects of submicron and decananometer bulk and SOI CMOS devices. 4) impact of oxide degradation and breakdown on device and circuit performance and functionality. 5) electrostatic discharge effects on the breakdown, reliability and performance of CMOS devices. 6) ionizing radiation effects in novel non volatile memory devices (nanocrystal memory, ferroelectric memory, and phase change memory). Prof. Cester is Senior Member of IEEE
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