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Scopus Author ID: 57213684667

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Employment (2)

Quantumscape: San Jose, California, US

2021-10 to present | Principal Process Engineer
Employment
Source: Self-asserted source
Koustav Ganguly

Intel Corporation: Portland, Oregon, US

2018-09 to 2021-09 | Process Engineer
Employment
Source: Self-asserted source
Koustav Ganguly

Education and qualifications (1)

Regents of the University of Minnesota: Minneapolis, MN, US

2012 to 2018 | PhD. (Chemical Engineering and Materials Science)
Education
Source: Self-asserted source
Koustav Ganguly

Works (10)

Structure-property relationships and mobility optimization in sputtered La-doped BaSnO3 films: Toward 100 cm2 V−1 s−1 mobility

Physical Review Materials
2021-04-13 | Journal article
DOI: 10.1103/physrevmaterials.5.044604
Part of ISSN: 2475-9953
Contributors: William M. Postiglione; Koustav Ganguly; Hwanhui Yun; Jong Seok Jeong; Andrew Jacobson; Lindsey Borgeson; Bharat Jalan; Andre Mkhoyan; Chris Leighton
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating

APL Materials
2020-07-01 | Journal article | Author
DOI: 10.1063/5.0017227
Part of ISSN: 2166-532X
Contributors: Helin Wang; ABHINAV PRAKASH; Konstantin Reich; Koustav Ganguly; Bharat Jalan; Chris Leighton
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3

Physical Review Materials
2019-07-02 | Journal article
DOI: 10.1103/physrevmaterials.3.075001
Part of ISSN: 2475-9953
Contributors: Helin Wang; Jeff Walter; Koustav Ganguly; Biqiong Yu; Guichuan Yu; Zhan Zhang; Hua Zhou; Han Fu; Martin Greven; Chris Leighton
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy

Scientific Reports
2018-07-06 | Journal article
DOI: 10.1038/s41598-018-28520-9
Part of ISSN: 2045-2322
Contributors: Hwanhui Yun; Koustav Ganguly; William Postiglione; Bharat Jalan; Chris Leighton; Andre Mkhoyan; Jong Seok Jeong
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2018-05 | Journal article
DOI: 10.1116/1.5026298
Part of ISSN: 0734-2101
Part of ISSN: 1520-8559
Contributors: Hwanhui Yun; Mehmet Topsakal; Abhinav Prakash; Koustav Ganguly; Chris Leighton; Bharat Jalan; Renata M. Wentzcovitch; K. Andre Mkhoyan; Jong Seok Jeong
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

APL Materials
2017-05 | Journal article | Author
DOI: 10.1063/1.4983039
Part of ISSN: 2166-532X
Contributors: Koustav Ganguly; ABHINAV PRAKASH; Bharat Jalan; C. Leighton
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Rubrene Single-Crystal Transistors with Perfluoropolyether Liquid Dielectric: Exploiting Free Dipoles to Induce Charge Carriers at Organic Surfaces

The Journal of Physical Chemistry C
2017-03-30 | Journal article
DOI: 10.1021/acs.jpcc.7b00743
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Contributors: Xinglong Ren; Elliot Schmidt; Jeff Walter; Koustav Ganguly; Chris Leighton; C. Daniel Frisbie
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Structure and transport in high pressure oxygen sputter-deposited BaSnO3−δ

APL Materials
2015-06 | Journal article | Author
DOI: 10.1063/1.4919969
Part of ISSN: 2166-532X
Contributors: Koustav Ganguly; Palak Ambwani; Peng Xu; Jong Seok Jeong; K. Andre Mkhoyan; C. Leighton; Bharat Jalan
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO<sub>3</sub> films

Applied Physics Letters
2013 | Journal article
DOI: 10.1063/1.4833248
EID:

2-s2.0-84888423423
Contributors: Wang, T.; Ganguly, K.; Marshall, P.; Xu, P.; Jalan, B.
Source: Self-asserted source
Koustav Ganguly via Scopus - Elsevier

Stabilization of intrinsic defects at high temperatures in ZnO nanoparticles by Ag modification

Journal of Colloid and Interface Science
2012 | Journal article
DOI:

http://dx.doi.org/10.1016/j.jcis.2011.09.065
Source: Self-asserted source
Koustav Ganguly
grade
Preferred source (of 2)‎
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