Laurent MONTES

0000-0002-3678-0163

Country: FR

Keywords: MEMS, NEMS, Micro & Nano Technologies, Nano Devices

Other IDs:
Scopus Author ID: 7005997129

Publications

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    Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices: Thin Solid Films 2012

    Hauser, D. and Savelli, G. and Plissonnier, M. and Montès, L. and Simon, J., (2012). "Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices", Thin Solid Films, vol. 520, no. 13, pp. 4259-4263
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    Schottky Barrier 3C-SiC Nanowire Field Effect Transistor Mar-2011

    Rogdakis, K, Bano, E, Montes, L, Bechelany, M, Cornu, D & Zekentes, K, 2011, 'Schottky Barrier 3C-SiC Nanowire Field Effect Transistor', Materials Science Forum, vol. 679-680, pp. 613-616.
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    An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: Application to GaN nanowires: Nanotechnology 2011

    Xu, X. and Potié, A. and Songmuang, R. and Lee, J.W. and Bercu, B. and Baron, T. and Salem, B. and Montès, L., (2011). "An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: Application to GaN nanowires", Nanotechnology, vol. 22, no. 10
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    Controlled growth of SiGe nanowires by addition of HCl in the gas phase: Journal of Applied Physics 2011

    Potié, A. and Baron, T. and Latu-Romain, L. and Rosaz, G. and Salem, B. and Montès, L. and Gentile, P. and Kreisel, J. and Roussel, H., (2011). "Controlled growth of SiGe nanowires by addition of HCl in the gas phase", Journal of Applied Physics, vol. 110, no. 2
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    Growth and characterization of gold catalyzed siGe nanowires and alternative metal-catalyzed Si nanowires: Nanoscale Research Letters 2011

    Potié, A. and Baron, T. and Dhalluin, F. and Rosaz, G. and Salem, B. and Latu-Romain, L. and Kogelschatz, M. and Gentile, P. and Oehler, F. and Montès, L. and Kreisel, J. and Roussel, H., (2011). "Growth and characterization of gold catalyzed siGe nanowires and alternative metal-catalyzed Si nanowires", Nanoscale Research Letters, vol. 6, no. 1
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    In situ calibration of wall shear stress sensor for micro fluidic application: Procedia Engineering 2011

    Laghrouche, M. and Montes, L. and Boussey, J. and Meunier, D. and Ameur, S. and Adane, A., (2011). "In situ calibration of wall shear stress sensor for micro fluidic application", Procedia Engineering, vol. 25, pp. 1225-1228
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    Low-cost embedded spirometer based on micro machined polycrystalline thin film: Flow Measurement and Instrumentation 2011

    Laghrouche, M. and Montes, L. and Boussey, J. and Ameur, S., (2011). "Low-cost embedded spirometer based on micro machined polycrystalline thin film", Flow Measurement and Instrumentation, vol. 22, no. 2, pp. 126-130
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    NEMS nanostructures with enhanced piezoresistive and piezoelectric properties. Application to sensor devices and energy harvesting: NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2011

    Montès, L. and Hinchet, R. and Xu, X. and Potié, A. and Lee, J.W. and Ardila, G. and Baron, T. and Mouis, M. and Songmuang, R., (2011). "NEMS nanostructures with enhanced piezoresistive and piezoelectric properties. Application to sensor devices and energy harvesting", NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, pp. 1064-1066
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    Rectifying source and drain contacts for effective carrier transport modulation of extremely doped SiC nanowire FETs: IEEE Transactions on Nanotechnology 2011

    Rogdakis, K. and Bano, E. and Montes, L. and Bechelany, M. and Cornu, D. and Zekentes, K., (2011). "Rectifying source and drain contacts for effective carrier transport modulation of extremely doped SiC nanowire FETs", IEEE Transactions on Nanotechnology, vol. 10, no. 5, pp. 980-984
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    SOI built-in heat spreader with temperature and pressure integrated sensors for cooling optimization and in situ monitoring: Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2011

    Bercu, B. and Montès, L. and Morfouli, P., (2011). "SOI built-in heat spreader with temperature and pressure integrated sensors for cooling optimization and in situ monitoring", Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 176, no. 4, pp. 305-310
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    Schottky barrier 3C-SiC nanowire field effect transistor: Materials Science Forum 2011

    Rogdakis, K. and Bano, E. and Montes, L. and Bechelany, M. and Cornu, D. and Zekentes, K., (2011). "Schottky barrier 3C-SiC nanowire field effect transistor", Materials Science Forum, vol. 679-680, pp. 613-616
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    Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires Apr-2010

    Rogdakis, K, Bano, E, Montes, L, Bechelany, M, Cornu, D & Zekentes, K, 2010, 'Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires', Materials Science Forum, vol. 645-648, pp. 1235-1238.
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    A gravity independent integrated passive cooler for solar cell efficiency improvement: Conference Record of the IEEE Photovoltaic Specialists Conference 2010

    Montès, L. and Bercu, B., (2010). "A gravity independent integrated passive cooler for solar cell efficiency improvement", Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3059-3064
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    An innovative NEMS pressure sensor approach based on heterostructure nanowire: Microelectronic Engineering 2010

    Xu, X. and Bercu, B. and Lime, F. and Montès, L., (2010). "An innovative NEMS pressure sensor approach based on heterostructure nanowire", Microelectronic Engineering, vol. 87, no. 3, pp. 406-411
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    Field effect transistors based on catalyst-free grown 3C-SiC nanowires: Materials Science Forum 2010

    Rogdakis, K. and Bano, E. and Montes, L. and Bechelany, M. and Cornu, D. and Zekentes, K., (2010). "Field effect transistors based on catalyst-free grown 3C-SiC nanowires", Materials Science Forum, vol. 645-6648, pp. 1235-1238
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    Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors: Applied Physics Letters 2010

    Jang, D. and Lee, J.W. and Tachi, K. and Montes, L. and Ernst, T. and Kim, G.T. and Ghibaudo, G., (2010). "Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors", Applied Physics Letters, vol. 97, no. 7
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    Characterization of mechanical stress on nanostructures for NEMS applications by ultra-thin membrane and self-suspension techniques: Microelectronic Engineering 2009

    Bercu, B. and Xu, X. and Montès, L. and Morfouli, P., (2009). "Characterization of mechanical stress on nanostructures for NEMS applications by ultra-thin membrane and self-suspension techniques", Microelectronic Engineering, vol. 86, no. 4-6, pp. 1303-1306
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    Finite elements study of high mechanical stress in nanostructures for innovative NEMS sensors: 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 2009

    Xu, X. and Bereu, B. and Lime, F. and Montès, L., (2009). "Finite elements study of high mechanical stress in nanostructures for innovative NEMS sensors", 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009, pp. 676-681
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    High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes: Proceedings of the International Semiconductor Conference, CAS 2009

    Bercu, B. and Montès, L. and Rochette, F. and Mouis, M. and Xin, X. and Morfouli, P., (2009). "High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes", Proceedings of the International Semiconductor Conference, CAS, vol. 1, pp. 93-96
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    The study of mechanical stress in NEMS heterostructures: Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 2009

    Xu, X. and Bercu, B. and Lime, F. and Montès, L., (2009). "The study of mechanical stress in NEMS heterostructures", Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, vol. 1, pp. 476-479
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    How to Monitor Metal-Insulator-Metal (MIM) capacitors dielectric reliability 2008

    Martinez, V. and Besset, C. and Monsieur, F. and Ney, D. and Montès, L. and Ghibaudo, G., (2008). "How to Monitor Metal-Insulator-Metal (MIM) capacitors dielectric reliability", "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008", pp. 537-540
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    Impact of oxygen vacancies profile and fringe effect on leakage current instability of Ta2O5 MIM capacitors: IEEE International Integrated Reliability Workshop Final Report 2008

    Martinez, V. and Besset, C. and Monsieur, F. and Montès, L. and Ghibaudo, G., (2008). "Impact of oxygen vacancies profile and fringe effect on leakage current instability of Ta2O5 MIM capacitors", IEEE International Integrated Reliability Workshop Final Report
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    Impact of oxygen vacancies profile and fringe effect on leakage current instability of tantalum pentoxide metal-insulator-metal (MIM) capacitors: IEEE International Integrated Reliability Workshop Final Report 2008

    Martinez, V. and Besset, C. and Monsieur, F. and Montès, L. and Ghibaudo, G., (2008). "Impact of oxygen vacancies profile and fringe effect on leakage current instability of tantalum pentoxide metal-insulator-metal (MIM) capacitors", IEEE International Integrated Reliability Workshop Final Report, pp. 21-24
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    New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications: IEEE International Reliability Physics Symposium Proceedings 2008

    Martinez, V. and Besset, C. and Monsieur, F. and Ney, D. and Montès, L. and Ghibaudo, G., (2008). "New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications", IEEE International Reliability Physics Symposium Proceedings, pp. 225-229
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    Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization: 14th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2008 2008

    Bercu, B. and Montès, L. and Morfouli, P., (2008). "Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization", 14th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2008, pp. 173-176
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    Impact of TiN Plasma Post-Treatment on Alumina Electron Trapping Jun-2007

    Bajolet, A, Bruyere, S, Proust, M, Montes, L & Ghibaudo, G, 2007, 'Impact of TiN Plasma Post-Treatment on Alumina Electron Trapping', IEEE Transactions on Device and Materials Reliability, vol. 54, no. 2, pp. 742-251.
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    Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal–Insulator–Metal Capacitors Apr-2007

    Bajolet, A, Clerc, R, Pananakakis, G, Tsamados, D, Picollet, E, Segura, N, Giraudin, J, Delpech, P, Montes, L & Ghibaudo, G, 2007, 'Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal–Insulator–Metal Capacitors', IEEE Transactions on Electron Devices, vol. 25, no. 4, pp. 468-751.
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    Impact of TiN plasma post-treatment on alumina electron trapping: IEEE Transactions on Device and Materials Reliability 2007

    Bajolet, A. and Bruyere, S. and Proust, M. and Montès, L. and Ghibaudo, G., (2007). "Impact of TiN plasma post-treatment on alumina electron trapping", IEEE Transactions on Device and Materials Reliability, vol. 7, no. 2, pp. 242-250
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    International master degree in micro and nanotechnology for integrated systems: Proceedings - MSE 2007: 2007 IEEE International Conference on Microelectronic Systems Education: Educating Systems Designers for the Global Economy and a Secure World 2007

    Montès, L. and Morfouli, P., (2007). "International master degree in micro and nanotechnology for integrated systems", Proceedings - MSE 2007: 2007 IEEE International Conference on Microelectronic Systems Education: Educating Systems Designers for the Global Economy and a Secure World, pp. 155-156
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    Low-frequency series-resistance analytical modeling of three-dimensional metal-insulator-metal capacitors: IEEE Transactions on Electron Devices 2007

    Bajolet, A. and Clerc, R. and Pananakakis, G. and Tsamados, D. and Picollet, E. and Ségura, N. and Giraudin, J.-C. and Delpech, P. and Montès, L. and Ghibaudo, G., (2007). "Low-frequency series-resistance analytical modeling of three-dimensional metal-insulator-metal capacitors", IEEE Transactions on Electron Devices, vol. 54, no. 4, pp. 742-751
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    Modified space-charge limited conduction in tantalum pentoxide MIM capacitors: Microelectronic Engineering 2007

    Martinez, V. and Besset, C. and Monsieur, F. and Montès, L. and Ghibaudo, G., (2007). "Modified space-charge limited conduction in tantalum pentoxide MIM capacitors", Microelectronic Engineering, vol. 84, no. 9-10, pp. 2310-2313
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    Simulation and 3D characterization of microsystems: Proceedings - MSE 2007: 2007 IEEE International Conference on Microelectronic Systems Education: Educating Systems Designers for the Global Economy and a Secure World 2007

    Bereu, B. and Montès, L. and Morfouli, P. and Mathieu, N., (2007). "Simulation and 3D characterization of microsystems", Proceedings - MSE 2007: 2007 IEEE International Conference on Microelectronic Systems Education: Educating Systems Designers for the Global Economy and a Secure World, pp. 107-108
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    A three charge-states model for silicon nanocrystals nonvolatile memories: IEEE Transactions on Electron Devices 2006

    Busseret, C. and Ferraton, S. and Montès, L. and Zimmermann, J., (2006). "A three charge-states model for silicon nanocrystals nonvolatile memories", IEEE Transactions on Electron Devices, vol. 53, no. 1, pp. 14-21
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    FEA calculations for ultra thin piezoresistive pressure sensor on SOI for heatspreader integration: 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006 2006

    Bercu, B. and Montès, L. and Morfouli, P., (2006). "FEA calculations for ultra thin piezoresistive pressure sensor on SOI for heatspreader integration", 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006, vol. 2006
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    Granular description of charging kinetics in silicon nanocrystals memories: Solid-State Electronics 2006

    Busseret, C. and Ferraton, S. and Montès, L. and Zimmermann, J., (2006). "Granular description of charging kinetics in silicon nanocrystals memories", Solid-State Electronics, vol. 50, no. 2, pp. 134-141
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    Impact of TiN plasma post-treatment on alumina electron trapping: IEEE International Integrated Reliability Workshop Final Report 2006

    Bajolet, A. and Bruyère, S. and Proust, M. and Montès, L. and Ghibaudo, G., (2006). "Impact of TiN plasma post-treatment on alumina electron trapping", IEEE International Integrated Reliability Workshop Final Report, pp. 31-36
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    Impact of TiN post-treatment on metal insulator metal capacitor performances: Microelectronic Engineering 2006

    Bajolet, A. and Manceau, J.-P. and Bruyère, S. and Clerc, R. and Proust, M. and Gaillard, N. and Giraudin, J.-C. and Delpech, P. and Montès, L. and Ghibaudo, G., (2006). "Impact of TiN post-treatment on metal insulator metal capacitor performances", Microelectronic Engineering, vol. 83, no. 11-12, pp. 2189-2194
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    Influence of dopant concentration on the electrical transport at low temperature in silicon nanowires: 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 2006

    Ionica, I. and Montès, L. and Zimmermann, J. and Ionica, I. and Saminadayar, L. and Bouchiat, V., (2006). "Influence of dopant concentration on the electrical transport at low temperature in silicon nanowires", 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, vol. 2, pp. 425-428
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    Modeling and optimization of series resistance of planar MIM capacitors: Solid-State Electronics 2006

    Bajolet, A. and Clerc, R. and Pananakakis, G. and Picollet, E. and Segura, N. and Boret, S. and Bruyère, S. and Manceau, J.P. and Giraudin, J.-C. and Delpech, P. and Montès, L. and Ghibaudo, G., (2006). "Modeling and optimization of series resistance of planar MIM capacitors", Solid-State Electronics, vol. 50, no. 7-8, pp. 1244-1251
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    Smart pressure sensor on SOI optimized by finite element analysis for heatspreader integration: 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings 2006

    Bercu, B. and Montès, L. and Morfouli, P., (2006). "Smart pressure sensor on SOI optimized by finite element analysis for heatspreader integration", 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, vol. 3, pp. 586-589
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    Electrical properties in low temperature range (5 K-300 K) of Tantalum Oxide dielectric MIM capacitors: Microelectronics Reliability 2005

    Deloffre, E. and Montès, L. and Ghibaudo, G. and Bruyère, S. and Blonkowski, S. and Bécu, S. and Gros-Jean, M. and Crémer, S., (2005). "Electrical properties in low temperature range (5 K-300 K) of Tantalum Oxide dielectric MIM capacitors", Microelectronics Reliability, vol. 45, no. 5-6, pp. 925-928
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    Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope: Solid-State Electronics 2005

    Ionica, I. and Montès, L. and Ferraton, S. and Zimmermann, J. and Saminadayar, L. and Bouchiat, V., (2005). "Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope", Solid-State Electronics, vol. 49, no. 9 SPEC. ISS., pp. 1497-1503
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    Three-dimensional 35 nF/mm 2 MIM capacitors integrated in BiCMOS technology: Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005

    Bajolet, A. and Giraudin, J.-C. and Rossato, C. and Pinzelli, L. and Bruyère, S. and Crémer, S. and Jagueneau, T. and Delpech, P. and Montès, L. and Ghibaudo, G., (2005). "Three-dimensional 35 nF/mm 2 MIM capacitors integrated in BiCMOS technology", Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 121-124
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    Charge dynamics of silicon nanocrystals in MOS capacitors: Microelectronic Engineering 2004

    Ferraton, S. and Montès, L. and Souifi, A. and Zimmermann, J., (2004). "Charge dynamics of silicon nanocrystals in MOS capacitors", Microelectronic Engineering, vol. 73-74, pp. 741-745
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    Direct extraction of McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nano-crystals imbedded in gate SiO2: Proceedings of SPIE - The International Society for Optical Engineering 2004

    Ferraton, S. and Zimmermann, J. and Montès, L. and Ghibaudo, G. and Brini, J. and Gurgul, J. and Chroboczek, J.A., (2004). "Direct extraction of McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nano-crystals imbedded in gate SiO2", Proceedings of SPIE - The International Society for Optical Engineering, vol. 5470, pp. 560-565
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    Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN: Applied Physics Letters 2004

    Liu, H.X. and Wu, S.Y. and Singh, R.K. and Gu, L. and Smith, D.J. and Newman, N. and Dilley, N.R. and Montes, L. and Simmonds, M.B., (2004). "Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN", Applied Physics Letters, vol. 85, no. 18, pp. 4076-4078
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    Silicon nanostructures patterned on SOI by AFM lithography: 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 2004

    Ionica, I. and Montès, L. and Ferraton, S. and Zimmermann, J. and Bouchiat, V. and Saminadayar, L., (2004). "Silicon nanostructures patterned on SOI by AFM lithography", 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, vol. 3, pp. 165-168
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    Evidence of charging effect in silicon nano-crystals using a feedback charge method with metal oxide-semiconductor capacitors: Nanotechnology 2003

    Ferraton, S. and Montès, L. and Souifi, A. and Zimmermann, J., (2003). "Evidence of charging effect in silicon nano-crystals using a feedback charge method with metal oxide-semiconductor capacitors", Nanotechnology, vol. 14, no. 6, pp. 633-636
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    Evidence of room temperature charging effects of silicon nanocrystals inside metal-oxide-semiconductor capacitors using feedback charge measurements: Microelectronic Engineering 2003

    Ferraton, S. and Montès, L. and Souifi, A. and Zimmermann, J., (2003). "Evidence of room temperature charging effects of silicon nanocrystals inside metal-oxide-semiconductor capacitors using feedback charge measurements", Microelectronic Engineering, vol. 67-68, pp. 858-864
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    Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with curie temperatures above 900K: Materials Research Society Symposium - Proceedings 2003

    Wu, S.Y. and Liu, H.X. and Gu, L. and Singh, R.K. and Van Schilfgaarde, M. and Smith, D.J. and Dilley, N.R. and Montes, L. and Simmonds, M.B. and Newman, N., (2003). "Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with curie temperatures above 900K", Materials Research Society Symposium - Proceedings, vol. 798, pp. 551-555
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    Commercial apparatus for measuring thermal transport properties from 1.9 to 390 Kelvin: Materials Research Society Symposium - Proceedings 2002

    Dilley, N.R. and Black, R.C. and Montes, L. and Wilson, A. and Simmonds, M.B., (2002). "Commercial apparatus for measuring thermal transport properties from 1.9 to 390 Kelvin", Materials Research Society Symposium - Proceedings, vol. 691, pp. 85-90
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    Electron transport in silicon nanostructures based on ultra-thin SOI: Journal De Physique. IV : JP 2002

    Pouydebasque, A. and Montes, L. and Zimmermann, J. and Balestra, F. and Fraboulet, D. and Mariolle, D. and Gautier, J. and Schopfer, F. and Bouchiat, V. and Saminadayar, L., (2002). "Electron transport in silicon nanostructures based on ultra-thin SOI", Journal De Physique. IV : JP, vol. 12, no. 3
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    A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices: Materials Research Society Symposium - Proceedings 2001

    Montès, L. and Grom, G.F. and Krishnan, R. and Fauchet, P.M. and Tsybeskov, L. and White Jr., B.E., (2001). "A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices", Materials Research Society Symposium - Proceedings, vol. 638
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    Carrier transport and lateral conductivity in nanocrystalline silicon layers: Materials Research Society Symposium - Proceedings 2001

    Kim, H.B. and Montes, L. and Krishnan, R. and Fauchet, P.M. and Tsybeskov, L., (2001). "Carrier transport and lateral conductivity in nanocrystalline silicon layers", Materials Research Society Symposium - Proceedings, vol. 638
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    Resonant tunneling in partially disordered silicon nanostructures: Europhysics Letters 2001

    Tsybeskov, L. and Grom, G.F. and Krishnan, R. and Montes, L. and Fauchet, P.M. and Kovalev, D. and Diener, J. and Timoshenko, V. and Koch, F. and McCaffrey, J.P. and Baribeau, J.-M. and Sproule, G.I. and Lockwood, D.J. and Niquet, Y.M. and Delerue, C. and Allan, G., (2001). "Resonant tunneling in partially disordered silicon nanostructures", Europhysics Letters, vol. 55, no. 4, pp. 552-558
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    Static and dynamic characterization of MOS capacitors containing nano-crystal silicon dots: Proceedings of the International Semiconductor Conference, CAS 2001

    Montès, L. and Ferraton, S. and Ionica, I. and Mescot, X. and Zimmermann, J., (2001). "Static and dynamic characterization of MOS capacitors containing nano-crystal silicon dots", Proceedings of the International Semiconductor Conference, CAS, vol. 2, pp. 425-428
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    Localized photo-assisted electro-deposition of zinc selenide into p-type porous silicon: Journal of Porous Materials 2000

    Montès, L. and Muller, F. and Hérino, R., (2000). "Localized photo-assisted electro-deposition of zinc selenide into p-type porous silicon", Journal of Porous Materials, vol. 7, no. 1, pp. 77-80
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    Luminescence and structural properties of porous silicon with ZnSe intimate contact: Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2000

    Montès, L. and Hérino, R., (2000). "Luminescence and structural properties of porous silicon with ZnSe intimate contact", Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 69, pp. 136-141
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    Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices: Annual Device Research Conference Digest 2000

    Tsybeskov, L. and Montes, L. and Grom, G.F. and Krishnan, R. and Fauchet, P.M. and White Jr., B., (2000). "Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices", Annual Device Research Conference Digest, pp. 53-54
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    Nanocrystalline silicon superlattices: Building blocks for quantum devices: Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2000

    Tsybeskov, L. and Grom, G.F. and Jungo, M. and Montes, L. and Fauchet, P.M. and McCaffrey, J.P. and Baribeau, J.-M. and Sproule, G.I. and Lockwood, D.J., (2000). "Nanocrystalline silicon superlattices: Building blocks for quantum devices", Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 69, pp. 303-308
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    Optical analysis of plasma enhanced crystallization of amorphous silicon films: Materials Research Society Symposium - Proceedings 1999

    Montés, L. and Tsybeskov, L. and Fauchet, P.M. and Pangal, K. and Sturm, J.C., (1999). "Optical analysis of plasma enhanced crystallization of amorphous silicon films", Materials Research Society Symposium - Proceedings, vol. 536, pp. 505-510
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    Electrochemical and chemical deposition of II-VI semiconductors in porous silicon: Materials Research Society Symposium - Proceedings 1997

    Herino, R. and Gros-Jean, M. and Montes, L. and Lincot, D., (1997). "Electrochemical and chemical deposition of II-VI semiconductors in porous silicon", Materials Research Society Symposium - Proceedings, vol. 452, pp. 467-472
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    Investigation on the electrochemical deposition of cadmium telluride in porous silicon: Thin Solid Films 1997

    Montés, L. and Muller, F. and Gaspard, F. and Hérino, R., (1997). "Investigation on the electrochemical deposition of cadmium telluride in porous silicon", Thin Solid Films, vol. 297, no. 1-2, pp. 35-38
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    Electron paramagnetic resonance of Mn 2+ in strained-layer semiconductor superlattices: Solid State Communications 1995

    Qazzaz, M. and Yang, G. and Xin, S.H. and Montes, L. and Luo, H. and Furdyna, J.K., (1995). "Electron paramagnetic resonance of Mn 2+ in strained-layer semiconductor superlattices", Solid State Communications, vol. 96, no. 6, pp. 405-409
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    Porous silicon membranes for gas-sensor applications: Sensors and Actuators: A. Physical 1995

    Taliercio, T. and Dilhan, M. and Massone, E. and Foucaran, A. and Gué, A.M. and Bretagnon, T. and Fraisse, B. and Montès, L., (1995). "Porous silicon membranes for gas-sensor applications", Sensors and Actuators: A. Physical, vol. 46, no. 1-3, pp. 43-46
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    Finite elements study of high mechanical stress in nanostructures for innovative NEMS sensors

    Xu, X, Bercu, B, Lime, F & Montes, L, 2009, 'Finite elements study of high mechanical stress in nanostructures for innovative NEMS sensors', 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE, Shenzhen, China, pp. 676-681.
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    High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes

    Bercu, B, Montes, L, Rochette, F, Mouis, M, Xin, X & Morfouli, P, 2009, 'High mechanical stress applied to FD-SOI transistors using ultra-thin silicon membranes', 2009 International Semiconductor Conference, IEEE, Sinaia, Romania, pp. 93-96.
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    Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors

    Martinez, V, Besset, C, Monsieur, F, Montes, L & Ghibaudo, G, 2008, 'Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors', 2008 IEEE International Integrated Reliability Workshop Final Report, IEEE, South lake Tahoe, CA, USA, pp. 21-24.
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    International Master Degere in Micro and NanoTechnology for Integrated Systems

    Montes, L & Morfouli, P, 2007, 'International Master Degere in Micro and NanoTechnology for Integrated Systems', 2007 IEEE International Conference on Microelectronic Systems Education (MSE'07), IEEE, San Diego, CA, USA, pp. 155-156.
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    Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization

    Bercu, B, Montes, L & Morfouli, P, 2008, 'Silicon integrated vapor chamber equipped with integrated sensor network for in-situ thermal monitoring and cooling optimization', 2008 14th International Workshop on Thermal Inveatigation of ICs and Systems, IEEE, Rome, Italy, pp. 173-176.
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    Simulation and 3D Characterization of Microsystems

    Bercu, B, Montes, L, Morfouli, P & Mathieu, N, 2007, 'Simulation and 3D Characterization of Microsystems', 2007 IEEE International Conference on Microelectronic Systems Education (MSE'07), IEEE, San Diego, CA, USA, pp. 107-108.

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