Personal information

Activities

Employment (1)

Tashkent State Technical University: Tashkent, UZ

Employment
Source: Self-asserted source
Nurulla Zikrillayev

Works (19)

An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

Technical Physics Letters
2021 | Journal article
EID:

2-s2.0-85121445255

Part of ISSN: 10906533 10637850
Contributors: Bakhadirkhanov, M.K.; Ibodullaev, S.N.; Zikrillaev, N.F.; Koveshnikov, S.V.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

Surface Engineering and Applied Electrochemistry
2020 | Journal article
EID:

2-s2.0-85098323691

Part of ISSN: 19348002 10683755
Contributors: Bakhadirkhanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.; Iliev, K.M.; Mavlonov, G.K.; Koveshnikov, S.V.; Ibodullaev, S.N.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Functional possibilities of strong compensated leggier Si with the different deep energetic levels impurities in electronics

Journal of Advanced Research in Dynamical and Control Systems
2020 | Journal article
EID:

2-s2.0-85090690479

Part of ISSN: 1943023X
Contributors: Zikrillayev, N.F.; Ayupov, K.C.; Valiyev, S.A.; Sherg’oziyev, S.B.; Mavlonov, G.’.X.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

Semiconductor Physics, Quantum Electronics and Optoelectronics
2020 | Journal article
EID:

2-s2.0-85097094140

Part of ISSN: 16056582 15608034
Contributors: Bakhadyrkhanov, M.K.; Ismaylov, B.K.; Tachilin, S.A.; Ismailov, K.A.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Silicon photovoltaic cells with clusters of nickel atoms

Applied Solar Energy (English translation of Geliotekhnika)
2016 | Journal article
EID:

2-s2.0-85013420765

Part of ISSN: 0003701X
Contributors: Bakhadyrkhanov, M.K.; Valiev, S.A.; Zikrillaev, N.F.; Koveshnikov, S.V.; Saitov, E.B.; Tachilin, S.A.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Current-voltage behavior of silicon containing nanoclusters of manganese atoms

Inorganic Materials
2014 | Journal article
EID:

2-s2.0-84897008634

Part of ISSN: 16083172 00201685
Contributors: Bakhadyrkhanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Ferromagnetic states of p-type silicon doped with Mn

Journal of the Korean Physical Society
2014 | Journal article
EID:

2-s2.0-84901953813

Part of ISSN: 19768524 03744884
Contributors: Yunusov, Z.A.; Yuldashev, S.U.; Igamberdiev, K.T.; Kwon, Y.H.; Kang, T.W.; Bakhadyrkhanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Infrared quenching of photoconduction in silicon with multicharge manganese clusters

Surface Engineering and Applied Electrochemistry
2013 | Journal article
EID:

2-s2.0-84883636535

Part of ISSN: 10683755 19348002
Contributors: Bachadyrchanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.; Arzikulov, E.U.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

IR photodetectors in the range of λ = 1.5-8 μm, based on silicon with multicharged nanoclusters of manganese atoms

Russian Microelectronics
2012 | Journal article
EID:

2-s2.0-84870508122

Part of ISSN: 10637397
Contributors: Bakhadyrkhanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

Applied Solar Energy (English translation of Geliotekhnika)
2012 | Journal article
EID:

2-s2.0-84861432385

Part of ISSN: 0003701X
Contributors: Bakhadyrkhanov, M.K.; Isamov, S.B.; Zikrillaev, N.F.; Tachilin, S.A.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Current oscillation properties of manganese-doped-silicon materials

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
2006 | Journal article
EID:

2-s2.0-33750583129

Part of ISSN: 02534177
Contributors: Chen, Z.; Ba, W.; Zhang, J.; Cong, X.; Bakhadyrkhanov, M.K.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Spectral range of current self-oscillation in manganese-doped silicon

Technical Physics
2006 | Journal article
EID:

2-s2.0-33748939945

Part of ISSN: 10637842
Contributors: Bakhadirkhanov, M.K.; Zikrillaev, N.F.; Ayupov, K.S.; Bobonov, D.T.; Kadirova, F.A.; Il'Khomzhonov, N.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

About concentration of electroactive atoms of elements of transition groups in silicon

Elektronnaya Obrabotka Materialov
2005 | Journal article
EID:

2-s2.0-26844545155

Part of ISSN: 00135739
Contributors: Bakhadirkhanov, M.K.; Zikrillaev, N.F.; Narkulov, N.; Sadykov, U.H.; Turdi, Umar; Ayupov, K.S.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Thermodynamic conditions of excitation of stable and reproductive self-sustained oscillations of current with proposed parameters in compensated silicon

Elektronnaya Obrabotka Materialov
2004 | Journal article
EID:

2-s2.0-4644344065

Part of ISSN: 00135739
Contributors: Bakhadirkhanov, M.K.; Ayupov, K.S.; Zikrillaev, N.F.; Kadyrova, F.A.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

A photodetector based on strongly compensated silicon doped with manganese

Applied Solar Energy (English translation of Geliotekhnika)
2001 | Journal article
EID:

2-s2.0-77950030693

Part of ISSN: 0003701X
Contributors: Bakhadyrkhanov, M.K.; Zikrillaev, N.F.; Toshev, A.R.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Photodetector on basis of strongly compensated silicon doped with manganese

Geliotekhnika
2001 | Journal article
EID:

2-s2.0-0035777240

Part of ISSN: 01300997
Contributors: Bakhadyrkhanov, M.K.; Zikrillaev, N.F.; Toshev, A.R.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

Semiconductors
2000 | Journal article
EID:

2-s2.0-0034134622

Part of ISSN: 10637826
Contributors: Bakhadyrkhanov, M.K.; Azimkhuzhaev, Kh.; Zikrillaev, N.F.; Sabdullaev, A.B.; Arzikulov, É.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Correlation between the material parameters and conditions for the excitation of recombination waves in Si(S)

Semiconductors
1999 | Journal article
EID:

2-s2.0-0032667212

Part of ISSN: 10637826
Contributors: Bakhadyrkhanov, M.K.; Kurbanova, U.Kh.; Zikrillaev, N.F.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier

Self-sustained Oscillation in Compensated Silicon

Journal of Communications Technology and Electronics
1998 | Journal article
EID:

2-s2.0-2742574167

Part of ISSN: 10642269
Contributors: Bakhodirkhonov, M.K.; Zikrillaev, N.F.; Egamberdiev, B.E.
Source: Self-asserted source
Nurulla Zikrillayev via Scopus - Elsevier
grade
Preferred source (of 3)‎