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Works (9)

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Physical Review Applied
2023-10-04 | Journal article
DOI: 10.1103/PhysRevApplied.20.044009
Contributors: Paweł Wyborski; Michał Gawełczyk; Paweł Podemski; Piotr Andrzej Wroński; Mirosława Pawlyta; Sandeep Gorantla; Fauzia Jabeen; Sven Höfling; Grzegorz Sęk
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Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

Materials
2022-01-29 | Journal article
DOI: 10.3390/ma15031071
Contributors: Paweł Wyborski; Paweł Podemski; Piotr Andrzej Wroński; Fauzia Jabeen; Sven Höfling; Grzegorz Sęk
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Crossref
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Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Materials
2021-10-21 | Journal article
DOI: 10.3390/ma14216270
Contributors: Tristan Smołka; Katarzyna Posmyk; Maja Wasiluk; Paweł Wyborski; Michał Gawełczyk; Paweł Mrowiński; Monika Mikulicz; Agata Zielińska; Johann Peter Reithmaier; Anna Musiał et al.
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Crossref
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Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate

Materials
2021-09-10 | Journal article
DOI: 10.3390/ma14185221
Contributors: Piotr Andrzej Wroński; Paweł Wyborski; Anna Musiał; Paweł Podemski; Grzegorz Sęk; Sven Höfling; Fauzia Jabeen
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Crossref
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InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

Applied Physics Letters
2021-05-31 | Journal article
DOI: 10.1063/5.0045997
Contributors: A. Musiał; M. Mikulicz; P. Mrowiński; A. Zielińska; P. Sitarek; P. Wyborski; M. Kuniej; J. P. Reithmaier; G. Sęk; M. Benyoucef
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InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window

Materials
2021-02 | Journal article | Author
DOI: 10.3390/ma14040759
Contributors: Paweł Wyborski; Anna Musiał; Paweł Mrowiński; Paweł Podemski; Vasilij Baumann; Piotr Wroński; Fauzia Jabeen; Sven Höfling; Grzegorz Sęk
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Multidisciplinary Digital Publishing Institute
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Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters

Physical Review Applied
2020-12-17 | Journal article
DOI: 10.1103/PhysRevApplied.14.064054
Contributors: P. Holewa; M. Gawełczyk; A. Maryński; P. Wyborski; J.P. Reithmaier; G. Sęk; M. Benyoucef; M. Syperek
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Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths

Physical Review B
2020-05-11 | Journal article
DOI: 10.1103/PhysRevB.101.195304
Contributors: P. Holewa; M. Gawełczyk; C. Ciostek; P. Wyborski; S. Kadkhodazadeh; E. Semenova; M. Syperek
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Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

Physical Review B
2019-12-27 | Journal article
DOI: 10.1103/PhysRevB.100.241304
Contributors: M. Gawełczyk; P. Wyborski; P. Podemski; J. P. Reithmaier; S. Höfling; G. Sęk
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