Personal information

Websites & social links

https://publons.com/researcher/3967718/behnam-dorostkar-yaghouti/

Other IDs

Scopus Author ID: 55912202100

Keywords

RF, microelectronics, image processing

Countries

Iran

Activities

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Education and qualifications (1)

Iran University of Science and Technology: Tehran, Tehran, IR

2017 to 2022 | PhD (electronic)
Education
Source: Self-asserted source
Behnam Dorostkar Yaghouti

Works (6)

Size Reduction and Harmonics Suppression in Microwave Power Dividers

ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY
2023-11-10 | Journal article
DOI: 10.14500/aro.11385
Contributors: Sobhan Roshani; Salah I. Yahya; Yazeed Y. Ghadi; Saeed Roshani; Fariborz Parandin; Behnam D. Yaghouti
Source: check_circle
Crossref

A high linearity UWB LNA using a novel linearizer feedback, based on complementary derivation superposition techniques

Analog Integrated Circuits and Signal Processing
2022-03 | Journal article
DOI: 10.1007/s10470-021-01960-6
Contributors: Behnam Dorostkar Yaghouti; Javad Yavandhasani
Source: check_circle
Crossref

A high linearity low power low-noise amplifier designed for ultra-wide-band receivers

Analog Integrated Circuits and Signal Processing
2021-04-07 | Journal article
DOI: 10.1007/s10470-020-01783-x
Contributors: Behnam Dorostkar Yaghouti; Javad Yavandhasani
Source: check_circle
Crossref
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DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

HOLOS
2018-02-09 | Journal article
DOI: 10.15628/holos.2018.6173
Contributors: Behnam Dorostkar; Saeid Marjani
Source: check_circle
Crossref

A New Method Modifying Single Miller Feedforward Frequency Compensation to Drive Large Capacitive Loads: Putting an Attenuator in the Path

Analog Integrated Circuits and Signal Processing
2017 | Journal article
DOI: 10.1007/s10470-017-1026-z
EID:

2-s2.0-85025821929

Part of ISSN: 15731979 09251030
Contributors: Chaharmahali, I.; Asadi, S.; Dorostkar, B.; bosra, M.; Abedini, M.
Source: Self-asserted source
Behnam Dorostkar Yaghouti via Scopus - Elsevier

Design of tunneling field-effect transistor (TFET) with Al<inf>x</inf>Ga<inf>1&#x2212;x</inf>AS/In<inf>x</inf>Ga<inf>1&#x2212;x</inf>As hetero-junction

2013 21st Iranian Conference on Electrical Engineering (ICEE)
2013-05 | Report
DOI: 10.1109/iraniancee.2013.6599777
ISBN: 9781467356343
Source: Self-asserted source
Behnam Dorostkar Yaghouti
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