Personal information
Biography
Fengnian Xia's research focuses on solid state device physics. He received the B.E. degree with highest honor in electronics engineering from Tsinghua University, Beijing, China, in 1998 and M.A. and Ph.D. degrees in electrical engineering from Princeton University, Princeton, NJ, USA in 2001 and 2005, respectively. He was employed at IBM Thomas J. Watson research center in Yorktown Heights, NY, USA as postdoc, engineer, and research staff from 2005 to 2013. He started at Yale University as an assistant professor in September 2013. Currently he is Professor of Electrical Engineering at Yale University and the Director of Undergraduate Studies of EE programs. He is particularly interested in the roles of quantum geometry in infrared light-matter interactions and quantum transport in the low-dimensional materials. He also actively develops electronic and photonic devices for applications in computing, flexible electronics, imaging, optical communications, and energy harvesting.