Personal information

Quantum geometry and topology, Light-matter interactions, Carrier transport, Intelligent sensing, Integrated optoelectronics and nanoelectronics, Low-dimensional materials
United States

Biography

Fengnian Xia's research focuses on solid state device physics. He received the B.E. degree with highest honor in electronics engineering from Tsinghua University, Beijing, China, in 1998 and M.A. and Ph.D. degrees in electrical engineering from Princeton University, Princeton, NJ, USA in 2001 and 2005, respectively. He was employed at IBM Thomas J. Watson research center in Yorktown Heights, NY, USA as postdoc, engineer, and research staff from 2005 to 2013. He started at Yale University as an assistant professor in September 2013. Currently he is Professor of Electrical Engineering at Yale University and the Director of Undergraduate Studies of EE programs. He is particularly interested in the roles of quantum geometry in infrared light-matter interactions and quantum transport in the low-dimensional materials. He also actively develops electronic and photonic devices for applications in computing, flexible electronics, imaging, optical communications, and energy harvesting.

Activities

Employment (4)

Yale University: New Haven, Connecticut, US

2023-07-01 to present | Professor (Electrical Engineering)
Employment
Source: Self-asserted source
Fengnian Xia

Yale University: New Haven, CT, US

2019-07-01 to 2023-06-30 | Associate Professor with Tenure (Electrical Engineering)
Employment
Source: Self-asserted source
Fengnian Xia

Yale University: New Haven, US

2013-09-01 to 2019-06-30 | Assistant & Associate Professor on Term (Electrical Engineering)
Employment
Source: Self-asserted source
Fengnian Xia

IBM Research - Thomas J. Watson Research Center: Yorktown Heights, New York, US

2005-03-01 to 2013-08-31 | Postdoc, Engineer & Research Staff (Physical Sciences)
Employment
Source: Self-asserted source
Fengnian Xia

Education and qualifications (3)

Princeton University: Princeton, NJ, US

2001 to 2005 | Ph.D. (Electrical Engineering)
Education
Source: Self-asserted source
Fengnian Xia

Princeton University: Princeton, NJ, US

1998 to 2001 | MA (Electrical Engineering)
Education
Source: Self-asserted source
Fengnian Xia

Tsinghua University: Beijing, Beijing, CN

1993 to 1998 | BE (Electronics Engineering)
Education
Source: Self-asserted source
Fengnian Xia

Professional activities (17)

Optica: D.C., D.C., US

Membership
Source: Self-asserted source
Fengnian Xia

IEEE Photonics Society: NJ, NJ, US

Membership
Source: Self-asserted source
Fengnian Xia

American Physical Society: Md., Md., US

Membership
Source: Self-asserted source
Fengnian Xia

American Physical Society: Md., Md., US

2023-10-19 | Fellow of APS
Distinction
Source: Self-asserted source
Fengnian Xia

Optica: Washington, US

2022 | Optica Fellow
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2022 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2021 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2020 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

The White House: Washington D.C., District of Columbia, US

2019 | Presidential Early Career Award for Scientists and Engineers
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2019 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2018 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

Clarivate Analytics US LLC: Philadelphia, PA, US

2017 | High Cited Researcher in Physics
Distinction
Source: Self-asserted source
Fengnian Xia

National Science Foundation: VA, VA, US

2016 | National Science Foundation Career Award
Distinction
Source: Self-asserted source
Fengnian Xia

Office of Naval Research: Arlington, Virginia, US

2015 | Office of Naval Research Young Investigator Award
Distinction
Source: Self-asserted source
Fengnian Xia

IBM Research: Yorktown Heights, NY, US

2012 | IBM Corporate Award
Distinction
Source: Self-asserted source
Fengnian Xia

MIT Technology Review: Boston, US

2011 | TR35, MIT Technology Review’s Top Young Innovators under 35
Distinction
Source: Self-asserted source
Fengnian Xia

Tsinghua University: Beijing, Beijing, CN

1998 | Graduation with the highest honor
Distinction
Source: Self-asserted source
Fengnian Xia

Peer review (138 reviews for 23 publications/grants)

Review activity for ACS applied electronic materials. (1)
Review activity for ACS applied materials & interfaces. (2)
Review activity for ACS applied nano materials. (3)
Review activity for ACS nano. (36)
Review activity for ACS photonics. (18)
Review activity for Advanced optical materials (2)
Review activity for Chemical reviews. (1)
Review activity for Chemistry of materials. (1)
Review activity for Journal of physical chemistry. (1)
Review activity for Journal of the American Chemical Society. (2)
Review activity for Laser & photonics reviews. (1)
Review activity for Nano letters. (45)
Review activity for Nature (1)
Review activity for Nature communications (3)
Review activity for Nature electronics. (3)
Review activity for Nature materials. (5)
Review activity for Nature nanotechnology (1)
Review activity for Nature photonics (6)
Review activity for Nature physics (1)
Review activity for Nature reviews. (1)
Review activity for Nature synthesis. (1)
Review activity for Small. (1)
Review activity for The journal of physical chemistry letters. (2)