Personal information

Websites & social links

Page personnelle

Other IDs

ResearcherID: B-1108-2013

Keywords

modélisation, simulation, échelle atomique, physique des solides, matériaux

Countries

France

Activities

Collapse all

Employment (1)

LAAS-CNRS: TOULOUSE, FR

1984-10-01 to present | Physicist (Nano Engineering and System Integration)
Employment
Source: Self-asserted source
Georges Landa

Works (50 of 66)

Items per page:
Page 1 of 2

Exploring potential energy surfaces to reach saddle points above convex regions

The Journal of Chemical Physics
2024-06-21 | Journal article
DOI: 10.1063/5.0210097
Contributors: M. Gunde; A. Jay; M. Poberžnik; N. Salles; N. Richard; G. Landa; N. Mousseau; L. Martin-Samos; A. Hemeryck
Source: check_circle
Crossref

Enhancing DFT-based energy landscape exploration by coupling quantum mechanics and static modes

Physical Chemistry Chemical Physics
2022 | Journal article
DOI: 10.1039/d1cp03562b
Part of ISSN: 1463-9076
Part of ISSN: 1463-9084
Contributors: Georges Landa
Source: Self-asserted source
Georges Landa

2-MODES BEHAVIOR OF GA(X)IN(1-X) P ALLOYS - RESONANCE RAMAN-SCATTERING OF DISORDER INDUCED MODES

REVUE DE PHYSIQUE APPLIQUEE
Journal article
DOI: 10.1051/rphysap:0198400190101700
Source: Self-asserted source
Georges Landa

A computational chemist approach to gas sensors: Modeling the response of SnO2 to CO, O2, and H2O Gases

JOURNAL OF COMPUTATIONAL CHEMISTRY
Journal article
DOI: 10.1002/jcc.21959
Source: Self-asserted source
Georges Landa

A kinetic Monte Carlo study of the initial stage of silicon oxidation: Basic mechanisms-induced partial ordering of the oxide interfacial layer

SURFACE SCIENCE
Journal article
DOI: 10.1016/j.susc.2009.04.014
Source: Self-asserted source
Georges Landa

A mesoscopic model of the intermixing during nanoenergetic materials processing

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Journal article
DOI: 10.1016/j.jpcs.2009.07.019
Source: Self-asserted source
Georges Landa

A new insight into the understanding of poly(N-isopropylacrylamide) the collapsed form of molecules

CHEMICAL PHYSICS
Journal article
DOI: 10.1016/j.chemphys.2007.06.054
Source: Self-asserted source
Georges Landa

A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: First principles calculations, scanning tunneling microscopy, and Auger spectroscopy

JOURNAL OF CHEMICAL PHYSICS
Journal article
DOI: 10.1063/1.4949764
Source: Self-asserted source
Georges Landa

Asymmetric diffusion as a key mechanism in Ni/Al energetic multilayer processing: A first principles study

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Journal article
DOI: 10.1116/1.3491182
Source: Self-asserted source
Georges Landa

Atomic Scale Determination of Enzyme Flexibility and Active Site Stability through Static Modes: Case of Dihydrofolate Reductase

JOURNAL OF PHYSICAL CHEMISTRY B
Journal article
DOI: 10.1021/jp109874z
Source: Self-asserted source
Georges Landa

Atomic-scale determination of DNA conformational response to strained furanose a static mode approach

TETRAHEDRON
Journal article
DOI: 10.1016/j.tet.2010.09.083
Source: Self-asserted source
Georges Landa

Beyond the solid on solid model: An atomic dislocation formation mechanism

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.368312
Source: Self-asserted source
Georges Landa

BOND RELAXATION PHENOMENON AND IMPURITY MODES FREQUENCIES IN III-V-COMPOUNDS

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(85)90121-8
Source: Self-asserted source
Georges Landa

Bringing aptamers into technologies: Impact of spacer terminations

APPLIED PHYSICS LETTERS
Journal article
DOI: 10.1063/1.4704658
Source: Self-asserted source
Georges Landa

CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.337199
Source: Self-asserted source
Georges Landa

Deformation of thiolated nucleic acid deposited on a silicon surface: A Static Mode approach

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Journal article
DOI: 10.1016/j.mseb.2009.11.014
Source: Self-asserted source
Georges Landa

Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

THIN SOLID FILMS
Journal article
Source: Self-asserted source
Georges Landa

DYNAMIC PROPERTIES OF GA1-XINXAS SOLID-SOLUTIONS - INFLUENCE OF LOCAL DISTORTION EFFECTS

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(93)90856-I
Source: Self-asserted source
Georges Landa

Evidence of Self-Assembled Monolayers Preorganization Prior to Surface Contact: a First Principles Study

JOURNAL OF PHYSICAL CHEMISTRY C
Journal article
DOI: 10.1021/jp9021213
Source: Self-asserted source
Georges Landa

Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation

APPLIED PHYSICS LETTERS
Journal article
DOI: 10.1063/1.3076092
Source: Self-asserted source
Georges Landa

First-principles study of near surface point defects stability in Si (100) and SiGe(100)

THIN SOLID FILMS
Journal article
DOI: 10.1016/j.tsf.2009.09.182
Source: Self-asserted source
Georges Landa

GASB/GAAS HETEROEPITAXY CHARACTERIZED AS A STRESS-FREE SYSTEM

APPLIED SURFACE SCIENCE
Journal article
DOI: 10.1016/0169-4332(91)90213-4
Source: Self-asserted source
Georges Landa

Ge clusters in Si matrix: structure and dynamics

EUROPEAN PHYSICAL JOURNAL B
Journal article
DOI: 10.1007/s100510051014
Source: Self-asserted source
Georges Landa

INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100)

JOURNAL OF CRYSTAL GROWTH
Journal article
DOI: 10.1016/0022-0248(88)90571-4
Source: Self-asserted source
Georges Landa

Insights into crystalline preorganization of gas-phase precursors: Densification mechanisms

CHEMISTRY OF MATERIALS
Journal article
DOI: 10.1021/cm071740a
Source: Self-asserted source
Georges Landa

Introducing densification mechanisms into the modelling of HfO2 atomic layer deposition

THIN SOLID FILMS
Journal article
DOI: 10.1016/j.tsf.2011.10.125
Source: Self-asserted source
Georges Landa

Kinetic Monte Carlo simulation of intermixing during semiconductor heteroepitaxy

APPLIED SURFACE SCIENCE
Journal article
DOI: 10.1016/S0169-4332(01)00713-9
Source: Self-asserted source
Georges Landa

LACKING RAMAN-SPECTROSCOPIC EVIDENCE FOR A STRUCTURAL PHASE-TRANSITION IN ZRTE5 AT 141-K

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(84)90431-9
Source: Self-asserted source
Georges Landa

LATTICE MODES IN THE LINEAR-CHAIN COMPOUND ZRTE5

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(82)90407-0
Source: Self-asserted source
Georges Landa

LATTICE-DYNAMICS OF THE TRANSITION-METAL PENTATELLURIDES ZRTE5 AND HFTE5

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(84)90372-7
Source: Self-asserted source
Georges Landa

LOCAL RAMAN PROBING OF SEMICONDUCTOR EPILAYERS IN THE VICINITY OF SURFACE AND INTERFACE

DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES
Conference paper
Part of ISBN: 0-7503-0294-1
Source: Self-asserted source
Georges Landa

LONG-WAVELENGTH OPTICAL PHONONS OF CDXZN1-XSB MIXED-CRYSTALS

SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Journal article
DOI: 10.1088/0268-1242/9/3/014
Source: Self-asserted source
Georges Landa

LOW WAVE-NUMBER RAMAN-SCATTERING IN VISCOUS-LIQUIDS

JOURNAL OF RAMAN SPECTROSCOPY
Journal article
DOI: 10.1002/jrs.1250251102
Source: Self-asserted source
Georges Landa

MBE growth and Raman analysis of [hhk]GaAs (Si or CaF2) highly strained heterostructures

MICROELECTRONICS JOURNAL
Journal article
DOI: 10.1016/0026-2692(95)00038-0
Source: Self-asserted source
Georges Landa

MICROSTRUCTURE OF BORON-DOPED SILICON LAYERS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

THIN SOLID FILMS
Journal article
DOI: 10.1016/0040-6090(87)90309-9
Source: Self-asserted source
Georges Landa

Mimicking DNA stretching with the Static Mode method: Shear stress versus transverse pulling stress

EUROPEAN PHYSICAL JOURNAL E
Journal article
DOI: 10.1140/epje/i2012-12075-0
Source: Self-asserted source
Georges Landa

MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.337683
Source: Self-asserted source
Georges Landa

Nanoscale pressure effects in individual double-wall carbon nanotubes

PHYSICAL REVIEW B
Journal article
DOI: 10.1103/PhysRevB.73.233408
Source: Self-asserted source
Georges Landa

OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.343904
Source: Self-asserted source
Georges Landa

Optical-phonon behavior in Ga1-xInxAs: The role of microscopic strains and ionic plasmon coupling

PHYSICAL REVIEW B
Journal article
DOI: 10.1103/PhysRevB.58.10452
Source: Self-asserted source
Georges Landa

Oxidation of Germanium and Silicon surfaces (100): a comparative study through DFT methodology

E-MRS 2012 SPRING MEETING, SYMPOSIUM M: MORE THAN MOORE: NOVEL MATERIALS APPROACHES FOR FUNCTIONALIZED SILICON BASED MICROELECTRONICS
Conference paper
DOI: 10.1088/1757-899X/41/1/012007
Source: Self-asserted source
Georges Landa

Periodic boundary versus quantum cluster approaches in the simulation of a nanoenergetic metallic model-system: Ni/Al(111) surface reactions

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Journal article
DOI: 10.1016/j.jpcs.2009.08.010
Source: Self-asserted source
Georges Landa

PHONONS IN THE TERNARY PHASE ZRS3-XSEX

SOLID STATE COMMUNICATIONS
Journal article
DOI: 10.1016/0038-1098(83)90329-0
Source: Self-asserted source
Georges Landa

PHOTOLUMINESCENCE AND RAMAN STUDIES OF RESIDUAL-STRESSES IN GAAS DIRECTLY GROWN ON INP

APPLIED PHYSICS LETTERS
Journal article
DOI: 10.1063/1.102243
Source: Self-asserted source
Georges Landa

RAMAN CHARACTERIZATION OF STRAINS AND INTERFACIAL DEFECTS IN GAAS/SI

REVUE DE PHYSIQUE APPLIQUEE
Journal article
DOI: 10.1051/rphysap:01990002509095100
Source: Self-asserted source
Georges Landa

RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.337392
Source: Self-asserted source
Georges Landa

RAMAN DETERMINATION OF THE COMPOSITION IN SEMICONDUCTOR TERNARY SOLID-SOLUTIONS

JOURNAL OF APPLIED PHYSICS
Journal article
DOI: 10.1063/1.338168
Source: Self-asserted source
Georges Landa

RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
Journal article
DOI: 10.1088/0022-3719/19/10/004
Source: Self-asserted source
Georges Landa

RAMAN-SCATTERING ANALYSIS OF DISORDER IN HETEROGENEOUS (GAAS)1-X(SIC2-H)X FILMS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

THIN SOLID FILMS
Journal article
DOI: 10.1016/0040-6090(87)90078-2
Source: Self-asserted source
Georges Landa

RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE

SUPERLATTICES AND MICROSTRUCTURES
Journal article
DOI: 10.1006/spmi.1993.1022
Source: Self-asserted source
Georges Landa
Items per page:
Page 1 of 2
How many people are using ORCID?