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Scopus Author ID: 12139712400

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Employment (1)

Benemerita Universidad Autonoma de Puebla: Puebla, Puebla, MX

2012-01-05 to present | Researcher ( Instituto de Ciencias)
Employment
Source: Self-asserted source
Joaquin Alvarado

Education and qualifications (2)

Centro de Investigacion y de Estudios Avanzados (CINVESTAV): Mexico, DF, MX

2002-09-01 to 2007-11-27 | Ph.D. (Electrical Engineering)
Education
Source: Self-asserted source
Joaquin Alvarado

Universidad Tecnologica de Mexico: Mexico, DF, MX

1998-08-13 to 2001-07-21 | Electronic and Communications Engineer (Ingeniery)
Education
Source: Self-asserted source
Joaquin Alvarado

Professional activities (2)

Universidad Nacional AutĆ³noma de MĆ©xico: Ciudad de Mexico, Ciudad de MĆ©xico, MX

2011-02-01 to 2012-01-31 | Posdoc - Research Assitant (Departamento de Telecomunicaciones - Facultad de IngenierĆ­a)
Invited position
Source: Self-asserted source
Joaquin Alvarado

UniversitƩ catholique de Louvain: Louvain-la-Neuve, Walloon Brabant, BE

2008-02-01 to 2010-10-22 | Posdoc - Research Assistant ( Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM) )
Invited position
Source: Self-asserted source
Joaquin Alvarado

Funding (4)

Cost-efficient and radiation-tolerant pixel detectors for ionizing radiation based on thin-film technology

2017-01 to 2019-12 | Grant
RCUK and CONACYT (London and Mexico City, GB)
Source: Self-asserted source
Joaquin Alvarado

Study of the application of thin-film technology in ATLAS project

2015-03 to 2015-09 | Grant
VIEP-BUAP (NY and Puebla City, NY, US)
Source: Self-asserted source
Joaquin Alvarado

Study of the Radiation Effects in Advanced MOSFET Architectures

2015-02 to 2017-08 | Grant
Fonds De La Recherche Scientifique - FNRS and CONACYT (Bruxelles and Mexico City, BE)
Source: Self-asserted source
Joaquin Alvarado

deep study of radiation effects in advanced transistors as well as in thin-film transistors

2013-04 to 2019-12 | Grant
VicerrectorĆ­a de InvestigaciĆ³n y Estudios de Posgrado, BenemĆ©rita Universidad AutĆ³noma de Puebla (Puebla City, MX)
Source: Self-asserted source
Joaquin Alvarado

Works (50 of 62)

Items per page:
Page 1 of 2

NANOMATERIALES DE CARBONO PARA LIBERACIƓN DE FƁRMACOS

RD-ICUAP
2025-01-21 | Journal article
DOI: 10.32399/icuap.rdic.2448-5829.2024.29.1355
Contributors: Daladier Alonso Granada-Ramƭrez; Yesmin Panecatl-Bernal; Miguel Angel MƩndez-Rojas; JosƩ Joaquƭn Alvarado-Pulido
Source: check_circle
Crossref

CELDAS SOLARES AVANZADAS: EL PAPEL CRUCIAL DE LAS TECNOLOGƍAS TƁNDEM.

RD-ICUAP
2024-04-24 | Journal article
DOI: 10.32399/icuap.rdic.2448-5829.2024.29.1354
Contributors: Dylan Tepatzi Xahuentitla; JosƩ Joaquƭn Alvarado Pulido
Source: check_circle
Crossref

ENERGƍA EƓLICA IMPULSADA POR TRƁFICO VEHICULAR, UNA OPCIƓN PARA EL CONSUMO DE ENERGƍA ELƉCTRICA POR ALUMBRADO PƚBLICO

RD-ICUAP
2024-04-24 | Journal article
DOI: 10.32399/icuap.rdic.2448-5829.2024.29.1345
Contributors: Edgar HernƔndez Palafox; JosƩ Joaquƭn Alvarado Pulido
Source: check_circle
Crossref

LA SIGATOKA, UNA AMENAZA PARA EL CULTIVO DE PLƁTANO Y BANANO EN MƉXICO

RD-ICUAP
2024-04-24 | Journal article
DOI: 10.32399/icuap.rdic.2448-5829.2024.29.1356
Contributors: MarĆ­a Fernanda Galindo HernĆ”ndez; Alexa LimĆ³n Bonilla; Luisa Renata LĆ³pez Lobato; Yesmin Panecatl Bernal; JosĆ© JoaquĆ­n Alvarado Pulido
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Crossref

Assessment of Cr doping on TiO2 thin films deposited by a wet chemical method

Ceramics International
2023-09 | Journal article
DOI: 10.1016/j.ceramint.2023.06.293
Contributors: D.A. Granada-Ramirez; J.A. Cardona-Bedoya; U. Hernandez-Rojas; A. Pulzara-Mora; M.I. Delgado-Rosero; A.A. DurƔn-Ledezma; M. PƩrez-GonzƔlez; Y. Panecatl Bernal; S.A. TomƔs; J.J. Alvarado-Pulido et al.
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Study of fluorine-doped tin oxide thin films deposited by pneumatic spray pyrolysis and ultrasonic spray pyrolysis: a direct comparison

Materials Research Express
2023-06-01 | Journal article
DOI: 10.1088/2053-1591/acda1a
Contributors: Raquel RamĆ­rez-Amador; JosĆ© JoaquĆ­n Alvarado-Pulido; Haydee Patricia MartĆ­nez-HernĆ”ndez; RaĆŗl Cortes- Maldonado; Salvador AlcĆ”ntara-Iniesta; Gregorio Flores-Carrasco; Esteban Ojeda-DurĆ”n; Oleksandr Malik; Leonardo Morales-de la Garza; Miguel Ɓngel MĆ©ndez-Rojas et al.
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Physical and Chemical Interactions of the Polar and Nonpolar Solvents on the Mesoporous Silica Material to Developing Solvent Sensors.

ChemistrySelect
2023-03-28 | Journal article
DOI: 10.1002/slct.202204636
Contributors: Yesmin Panecatlā€Bernal; JoaquĆ­n Alvarado; JosuĆ© Ortizā€Medina; IvĆ”n Fuentecillaā€Carcamo; Rodolfo Limaā€JuĆ”rez; Daladierā€Alonso Granadaā€RamĆ­rez; Melissa ChĆ”vezā€Portillo; Lucero Esquinaā€Arenas; Sergio HernĆ”ndezā€Corona; Elder Alpes de Vasconcelos et al.
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Green chemistry synthesis and structural and optical study of Dy2(CO3)3ā†’ Dy2O3 transition

Revista Mexicana de FĆ­sica
2023-03-01 | Journal article
DOI: 10.31349/RevMexFis.69.021302
Contributors: Oscar Portillo; M. Chavez Portillo; H. Juarez Santiesteban; L. Serrano de La Rosa; J. Alvarado Pulido; Y. Ramos Reynoso
Source: check_circle
Crossref

Correlating Disorder Microstructure and Magnetotransport of Carbon Nanowalls

Applied Sciences
2023-02-14 | Journal article
DOI: 10.3390/app13042476
Part of ISSN: 2076-3417
Contributors: Mijaela Acosta Gentoiu; Rafael Garcia Gutierrez; JosƩ Joaquƭn Alvarado Pulido; Javier MontaƱo Peraza; Marius Volmer; Sorin Vizireanu; Stefan ANTOHE; Gheorghe Dinescu; Ricardo Alberto Rodrƭguez-Carvajal
Source: Self-asserted source
Joaquin Alvarado

Controlling Size Distribution of Silver Nanoparticles using Natural Reducing Agents in MCMā€41@Ag

ChemistrySelect
2022-11-18 | Journal article
DOI: 10.1002/slct.202202566
Contributors: Gerardoā€Miguel Bravo de Luciano; Yesmin Panecatlā€Bernal; Blancaā€Susana Sotoā€Cruz; Miguel Ɓngel MĆ©ndezā€Rojas; Primavera LĆ³pezā€Salazar; Salvador AlcĆ”ntaraā€Iniesta; Melissa ChĆ”vez Portillo; Anabel Romeroā€LĆ³pez; JesĆŗsā€Israel MejĆ­aā€Silva; Joaquin Alvarado et al.
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Crossref

A wrinkled ZnO/MCM-41 nanocomposite: hydrothermal synthesis and characterization

Materials Research Express
2021-06-01 | Journal article
DOI: 10.1088/2053-1591/ac0c50
Contributors: Yesmin Panecatl-Bernal; Rodolfo Lima JuƔrez; Elder Alpes de Vasconcelos; Melissa ChƔvez Portillo; Walter Mendes de Azevedo; Miguel-Ɓngel MƩndez-Rojas; Rafael Garrido-Rosado; Julio Villanueva-Cab; Salvador AlcƔntara Iniesta; Joaquƭn Alvarado
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Crossref

Influence of Ethanolic Plant Extracts on Morphology and Size Distribution of Solā€Gel Prepared TiO 2 Nanoparticles

ChemistrySelect
2021-04-28 | Journal article
DOI: 10.1002/slct.202100494
Part of ISSN: 2365-6549
Part of ISSN: 2365-6549
Source: Self-asserted source
Joaquin Alvarado

Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition

Optical Materials
2020-10 | Journal article
DOI: 10.1016/j.optmat.2020.110206
Part of ISSN: 0925-3467
Source: Self-asserted source
Joaquin Alvarado

Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure

Materials Research Express
2020-10-01 | Journal article
DOI: 10.1088/2053-1591/abbc40
Contributors: E Saloma; S AlcƔntara; N HernƔndez-Como; J Villanueva-Cab; M Chavez; G PƩrez-Luna; J Alvarado
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Crossref

Efficient anchoring of nanostructured cadmium selenide on different kinds of carbon nanotubes

Nanotechnology
2020-04-17 | Journal article
DOI: 10.1088/1361-6528/ab7b04
Contributors: Yesmin Panecatl Bernal; Joaquin Alvarado; Fernando J Rodrƭguez-Macias; Rodolfo Lima JuƔrez; Juan Carlos Garcƭa-Gallegos; Melissa ChƔvez-Portillo; Miguel Ɓngel MƩndez-Rojas
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Crossref

The Influence of Deposition Time on the Structural, Morphological, Optical and Electrical Properties of ZnO-rGO Nanocomposite Thin Films Grown in a Single Step by USP

Crystals
2020-01-29 | Journal article
DOI: 10.3390/cryst10020073
Contributors: R. Ramƭrez-Amador; J. Alvarado; G. Flores-Carrasco; L. Morales-de la Garza; S. AlcƔntara-Iniesta; A. Luna-Flores; Y. P. Bernal; Miguel Ɓngel MƩndez Rojas; J. J. Gervacio-Arciniega; H. P. Martƭnez HernƔndez et al.
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Preferred source (of 2)ā€Ž

Re-evaluating the role of phosphinic acid (DINHOP) adsorption at the photoanode surface in the performance of dye-sensitized solar cells

Physical Chemistry Chemical Physics
2019-12-09 | Journal article
Part of DOI: 10.1039/c9cp05063a
Part of ISSN: 1463-9076
Part of ISSN: 1463-9084
Source: Self-asserted source
Joaquin Alvarado

Characterization of ZnO thin films obtained by ultrasonic spray pyrolysis for application in UV photoconductive detectors

Materials Research Express
2019-11-01 | Journal article
DOI: 10.1088/2053-1591/ab4fc3
Contributors: M Acosta-Osorno; S AlcƔntara-Iniesta; J Alvarado; C D Young; I Mejƭa; M Garcƭa; J R Ramos-Serrano; G Juarez-Dƭaz
Source: check_circle
Crossref

Synthesis and characterization of MCM-41 powder and its deposition by spin-coating

Optik
2019-05 | Journal article
DOI: 10.1016/j.ijleo.2019.03.117
Contributors: Yesmin Panecatl Bernal; Joaquƭn Alvarado; Rodolfo Lima JuƔrez; Miguel Ɓngel MƩndez Rojas; Elder Alpes de Vasconcelos; Walter Mendes de Azevedo; Salvador AlcƔntara Iniesta; Julio Villanueva Cab
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Crossref

Synthesis and characterization of carbon nanotubes/silica composites using gum arabic

Materials Research Express
2018-07-13 | Journal article
DOI: 10.1088/2053-1591/aacc3c
Contributors: Y P Bernal; Joaquƭn Alvarado; R L JuƔrez; E A de Vasconcelos; W M de Azevedo; Blanca-Susana Soto-Cruz
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Crossref

Verilog-A implementation of a double-gate junctionless compact model for DC circuit simulations

Semiconductor Science and Technology
2016 | Journal article
DOI: 10.1088/0268-1242/31/7/075002
EID:

2-s2.0-84976271760
Contributors: Alvarado, J.; Flores, P.; Romero, S.; ĆÆĀæĀ½vila-Herrera, F.; GonzĆÆĀæĀ½lez, V.; Soto-Cruz, B.S.; Cerdeira, A.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

RF modeling of 40-nm SOI triple-gate FinFET

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2015 | Journal article
DOI: 10.1002/jnm.2028
EID:

2-s2.0-84930394562
Contributors: Martinez-Lopez, A.G.; Cerdeira, A.; Tinoco, J.C.; Alvarado, J.; Padron, W.Y.; Mendoza, C.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2014 | Journal article
DOI: 10.1002/jnm.1988
EID:

2-s2.0-84906343716
Contributors: GarduƱo, S.I.; Alvarado, J.; Cerdeira, A.; Estrada, M.; Kilchytska, V.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors

Thin Solid Films
2014 | Journal article
DOI: 10.1016/j.tsf.2014.10.092
EID:

2-s2.0-84915811673
Contributors: Estrada, M.; Gutierrez-Heredia, G.; Cerdeira, A.; Alvarado, J.; GarduƱo, I.; Tinoco, J.; Mejia, I.; Quevedo-Lopez, M.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

Solid-State Electronics
2013 | Journal article
DOI: 10.1016/j.sse.2013.07.009
EID:

2-s2.0-84883146566
Contributors: Darbandy, G.; Gneiting, T.; Alius, H.; Alvarado, J.; Cerdeira, A.; IƱiguez, B.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

Semiconductor Science and Technology
2013 | Journal article
DOI: 10.1088/0268-1242/28/5/055014
EID:

2-s2.0-84876520251
Contributors: Darbandy, G.; Gneiting, T.; Alius, H.; Alvarado, J.; Cerdeira, A.; IƱiguez, B.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Fringing gate capacitance model for triple-gate FinFET

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
2013 | Conference paper
DOI: 10.1109/SiRF.2013.6489442
EID:

2-s2.0-84875989907
Contributors: Salas, S.; Tinoco, J.C.; Martinez-Lopez, A.G.; Alvarado, J.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Impact of extrinsic capacitances on FinFet RF performance

IEEE Transactions on Microwave Theory and Techniques
2013 | Journal article
DOI: 10.1109/TMTT.2012.2231697
EID:

2-s2.0-84873412517
Contributors: Tinoco, J.C.; Salas Rodriguez, S.; Martinez-Lopez, A.G.; Alvarado, J.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models

Microelectronics Journal
2013 | Journal article
DOI: 10.1016/j.mejo.2012.11.006
EID:

2-s2.0-84872945554
Contributors: Cheralathan, M.; Contreras, E.; Alvarado, J.; Cerdeira, A.; Iannaccone, G.; Sangiorgi, E.; IƱiguez, B.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Improved modeling of gate leakage currents for fin-shaped field-effect transistors

Journal of Applied Physics
2013 | Journal article
DOI: 10.1063/1.4795403
EID:

2-s2.0-84875801156
Contributors: GarduƱo, S.I.; Cerdeira, A.; Estrada, M.; Alvarado, J.; Kilchytska, V.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Parasitic gate capacitance model for triple-gate finfets

IEEE Transactions on Electron Devices
2013 | Journal article
DOI: 10.1109/TED.2013.2282629
EID:

2-s2.0-84887227469
Contributors: Rodriguez, S.S.; Tinoco, J.C.; Martinez-Lopez, A.G.; Alvarado, J.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

SOI FinFET compact model for RF circuits simulation

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
2013 | Conference paper
DOI: 10.1109/SiRF.2013.6489441
EID:

2-s2.0-84875983235
Contributors: Alvarado, J.; Tinoco, J.C.; Salas, S.; Martinez-Lopez, A.G.; Soto-Cruz, B.S.; Cerdeira, A.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

A compact model for single event effects in PD SOI sub-micron MOSFETs

IEEE Transactions on Nuclear Science
2012 | Journal article
DOI: 10.1109/TNS.2012.2201957
EID:

2-s2.0-84865393477
Contributors: Alvarado, J.; Kilchytska, V.; Boufouss, E.; Soto-Cruz, B.S.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Compact small-signal model for RF FinFETs

2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
2012 | Conference paper
DOI: 10.1109/ICCDCS.2012.6188936
EID:

2-s2.0-84860993103
Contributors: Alvarado, J.; Tinoco, J.C.; Kilchytska, V.; Flandre, D.; Raskin, J.-P.; Cerdeira, A.; Contreras, E.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Drain current model for bulk strained silicon NMOSFETs

2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
2012 | Conference paper
DOI: 10.1109/ICCDCS.2012.6188937
EID:

2-s2.0-84860998481
Contributors: Tinoco, J.C.; Alvarado, J.; Martinez-Lopez, A.G.; IƱiguez, B.; Cerdeira, A.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

Microelectronics Reliability
2012 | Journal article
DOI: 10.1016/j.microrel.2011.08.001
EID:

2-s2.0-84155164329
Contributors: Kilchytska, V.; Alvarado, J.; Put, S.; Collaert, N.; Simoen, E.; Claeys, C.; Militaru, O.; Berger, G.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Impact of extrinsic capacitances on FinFETs RF performance

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers
2012 | Conference paper
DOI: 10.1109/SiRF.2012.6160141
EID:

2-s2.0-84858737567
Contributors: Tinoco, J.C.; Alvarado, J.; Martinez-Lopez, A.G.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Simulation study of nanoscale double-gate CMOS circuits using compact advanced transport models

Proceedings of the 19th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2012
2012 | Conference paper
EID:

2-s2.0-84864194153
Contributors: Cheralathan, M.; Contreras, E.; Alvarado, J.; Cerdeira, A.; IƱiguez, B.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

A compact model for single event effects in PD SOI sub-micron MOSFETs

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
2011 | Conference paper
DOI: 10.1109/RADECS.2011.6131345
EID:

2-s2.0-84860124959
Contributors: Alvarado, J.; Kilchytska, V.; Boufouss, E.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Characterization and modelling of single event transients in LDMOS-SOI FETs

Microelectronics Reliability
2011 | Journal article
DOI: 10.1016/j.microrel.2011.07.082
EID:

2-s2.0-80052934791
Contributors: Alvarado, J.; Kilchytska, V.; Boufouss, E.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors

Journal of Applied Physics
2011 | Journal article
DOI: 10.1063/1.3575324
EID:

2-s2.0-79955718686
Contributors: GarduƱo, S.I.; Cerdeira, A.; Estrada, M.; Alvarado, J.; Kilchytska, V.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Effects of high-energy neutrons on advanced SOI MOSFETs

Advanced Materials Research
2011 | Book
DOI: 10.4028/www.scientific.net/AMR.276.95
EID:

2-s2.0-79960434491
Contributors: Kilchytska, V.; Alvarado, J.; Militaru, O.; Berger, G.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Solid-State Electronics
2011 | Journal article
DOI: 10.1016/j.sse.2011.01.008
EID:

2-s2.0-79953039174
Contributors: Kilchytska, V.; Alvarado, J.; Collaert, N.; Rooyackers, R.; Put, S.; Simoen, E.; Claeys, C.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer

Microelectronics Reliability
2011 | Journal article
DOI: 10.1016/j.microrel.2010.07.153
EID:

2-s2.0-79551477890
Contributors: Roda Neve, C.; Kilchytska, V.; Alvarado, J.; Lederer, D.; Militaru, O.; Flandre, D.; Raskin, J.-P.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Application of the symmetric doped double-gate model in circuit simulation containing double-gate graded-channel transistors

Journal of Integrated Circuits and Systems
2010 | Journal article
EID:

2-s2.0-78149240858
Contributors: Contreras, E.; Cerdeira, A.; Alvarado, J.; Pavanello, M.A.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs

Microelectronics Reliability
2010 | Journal article
DOI: 10.1016/j.microrel.2010.07.040
EID:

2-s2.0-79960436917
Contributors: Alvarado, J.; Boufouss, E.; Kilchytska, V.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010
2010 | Conference paper
EID:

2-s2.0-84878253629
Contributors: Boufouss, E.; Alvarado, J.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Effect of high-energy neutrons on MuGFETs

Solid-State Electronics
2010 | Journal article
DOI: 10.1016/j.sse.2009.12.019
EID:

2-s2.0-76349087585
Contributors: Kilchytska, V.; Alvarado, J.; Collaert, N.; Rooyakers, R.; Militaru, O.; Berger, G.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2010 | Journal article
DOI: 10.1002/jnm.725
EID:

2-s2.0-76649142013
Contributors: Alvarado, J.; IƱiguez, B.; Estrada, M.; Flandre, D.; Cerdeira, A.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier

Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

ECS Transactions
2010 | Conference paper
DOI: 10.1149/1.3474140
EID:

2-s2.0-79952475725
Contributors: Simoen, E.; Put, S.; Collaert, N.; Claeys, C.; Kilchytska, V.; Alvarado, J.; Flandre, D.
Source: Self-asserted source
Joaquin Alvarado via Scopus - Elsevier
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Peer review (6 reviews for 2 publications/grants)

Review activity for Journal of electronic materials. (3)
Review activity for Journal of electronic materials. (3)
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