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Works (23)

Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental

IEEE Transactions on Electron Devices
2024 | Journal article
Contributors: Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Sven Prigann; Gregor Pobegen; Paul Salmen; Gerald Rescher; Dominic Waldhoer et al.
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Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

IEEE Transactions on Electron Devices
2024 | Journal article
Contributors: Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhoer; Aleksandr Vasilev; Michael Waltl; Thomas Aichinger; Michel Bockstedte et al.
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Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies

IEEE Transactions on Electron Devices
2021-08 | Journal article
Contributors: Christian Schleich; Dominic Waldhoer; Katja Waschneck; Maximilian W. Feil; Hans Reisinger; Tibor Grasser; Michael Waltl
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On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices

IEEE Transactions on Electron Devices
2021-01 | Journal article
Contributors: M. W. Feil; K. Puschkarsky; W. Gustin; H. Reisinger; T. Grasser
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The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

Crystals
2020-12-16 | Journal article
Contributors: Maximilian W. Feil; Andreas Huerner; Katja Puschkarsky; Christian Schleich; Thomas Aichinger; Wolfgang Gustin; Hans Reisinger; Tibor Grasser
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NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

IEEE Transactions on Electron Devices
2019 | Journal article
Contributors: K.-U. Giering; K. Puschkarsky; H. Reisinger; G. Rzepa; G. Rott; R. Vollertsen; T. Grasser; R. Jancke
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An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps

IEEE Transactions on Electron Devices
2019-11 | Journal article
Contributors: K. Puschkarsky; H. Reisinger; G. A. Rott; Christian Schlunder; W. Gustin; T. Grasser
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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

IEEE Transactions on Electron Devices
2019-11 | Journal article
Contributors: K. Puschkarsky; T. Grasser; T. Aichinger; W. Gustin; H. Reisinger
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Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques

IEEE Transactions on Device and Materials Reliability
2019-06 | Journal article
Contributors: B. Ullmann; K. Puschkarsky; M. Waltl; H. Reisinger; T. Grasser
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From Device Aging Physics to Automated Circuit Reliability Sign Off

2019 IEEE International Reliability Physics Symposium (IRPS)
2019-03 | Conference paper
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Katja Puschkarsky

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental

IEEE Transactions on Electron Devices
2019-01 | Journal article
Contributors: Bianka Ullmann; Markus Jech; Katja Puschkarsky; Gunnar Andreas Rott; Michael Waltl; Yury Illarionov; Hans Reisinger; Tibor Grasser
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Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation

IEEE Transactions on Electron Devices
2018-11 | Journal article
Contributors: Katja Puschkarsky; Hans Reisinger; Christian Schlunder; Wolfgang Gustin; Tibor Grasser
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Relevance of off-state NBTI degradation in depletion HVNMOS transistor for power application

2018 International Integrated Reliability Workshop (IIRW)
2018-10 | Conference paper
Source: Self-asserted source
Katja Puschkarsky

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI

2018 48th European Solid-State Device Research Conference (ESSDERC)
2018-09 | Conference paper
Part of ISBN: 9781538654019
Contributors: K. Puschkarsky; H. Reisinger; C. Schlunder; W. Gustin; T. Grasser
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Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

IEEE Transactions on Device and Materials Reliability
2018-06 | Journal article
Contributors: Katja Puschkarsky; Hans Reisinger; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser
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Investigation of threshold voltage stability of SiC MOSFETs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2018-05 | Conference paper
Part of ISBN: 9781538629277
Contributors: Dethard Peters; Thomas Aichinger; Thomas Basler; Gerald Rescher; Katja Puschkarsky; Hans Reisinger
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Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

2018 IEEE International Reliability Physics Symposium (IRPS)
2018-03 | Conference paper
Source: Self-asserted source
Katja Puschkarsky

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification

Microelectronics Reliability
2018-03 | Journal article
Part of ISSN: 0026-2714
Contributors: C. Schlünder; K. Puschkarsky; G.A. Rott; W. Gustin; H. Reisinger
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Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

2018 IEEE International Reliability Physics Symposium (IRPS)
2018-03 | Conference paper
Part of ISBN: 9781538654798
Contributors: Katja Puschkarsky; Tibor Grasser; Thomas Aichinger; Wolfgang Gustin; Hans Reisinger
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Reliability and modeling: What to simulate and how?

2017 IEEE International Integrated Reliability Workshop (IIRW)
2017-10 | Conference paper
Part of ISBN: 9781538623329
Contributors: Rui Zhang; Kexin Yang; Elnatan Metaev; Milan Pesic; Jim Lloyd; Matt Ring; Peter Paliwoda; Sheldon Tan; Chadwin Young; Giovanni Verzellesi et al.
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Katja Puschkarsky via Crossref Metadata Search

Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

2017 IEEE International Integrated Reliability Workshop (IIRW)
2017-10 | Conference paper
Part of ISBN: 9781538623329
Contributors: Katja Puschkarsky; Hans Reisinger; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser
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Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads

2017 IEEE International Reliability Physics Symposium (IRPS)
2017-04 | Conference paper
Part of ISBN: 9781509066414
Contributors: Christian Schlunder; F. Proebster; J. Berthold; Katja Puschkarsky; Georg Georgakos; Wolfgang Gustin; Hans Reisinger
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Katja Puschkarsky via Crossref Metadata Search

Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

2017 IEEE International Reliability Physics Symposium (IRPS)
2017-04 | Conference paper
Source: Self-asserted source
Katja Puschkarsky
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