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ResearcherID: KQU-0530-2024

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Employment (1)

ON Semiconductor (United States): Pocatello, Idaho, US

Employment
Source: Self-asserted source
OMERFARUK KARADAVUT

Education and qualifications (2)

University of South Carolina: Columbia, US

2019-01-05 to 2023-12-18 | PhD (Electrical Engineering)
Education
Source: Self-asserted source
OMERFARUK KARADAVUT

University of Houston: Houston, TX, US

2017-01-05 to 2018-12-18 | MS (ELECTRICAL AND COMPUTER ENGINEERING)
Education
Source: Self-asserted source
OMERFARUK KARADAVUT

Works (21)

Effect of Enhanced Hole Transport on the Performance of Ni/Y2O3/n-4H-SiC Epilayer Radiation Detectors

IEEE Transactions on Nuclear Science
2023-09 | Journal article
DOI: 10.1109/TNS.2023.3306276
Contributors: Omerfaruk Karadavut; Joshua W. Kleppinger; Sandeep K. Chaudhuri; Krishna C. Mandal
Source: check_circle
Crossref

Vertical gradient freeze growth of detector grade CdZnTeSe single crystals

Journal of Crystal Growth
2022-10 | Journal article
DOI: 10.1016/j.jcrysgro.2022.126826
Contributors: Ritwik Nag; Sandeep K. Chaudhuri; Joshua W. Kleppinger; OmerFaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

IEEE Electron Device Letters
2022-09 | Journal article
DOI: 10.1109/LED.2022.3188543
Contributors: Sandeep K. Chaudhuri; OmerFaruk Karadavut; Joshua W. Kleppinger; Ritwik Nag; Gene Yang; Dongkyu Lee; Krishna C. Mandal
Source: check_circle
Crossref

Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers

IEEE Transactions on Nuclear Science
2022-08 | Journal article
DOI: 10.1109/TNS.2022.3168789
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; Omerfaruk Karadavut; Ritwik Nag; Daniel L. P. Watson; Douglas S. McGregor; Krishna C. Mandal
Source: check_circle
Crossref

Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection

IEEE Transactions on Nuclear Science
2022-08 | Journal article
DOI: 10.1109/TNS.2022.3168792
Contributors: Omerfaruk Karadavut; Sandeep K. Chaudhuri; Joshua W. Kleppinger; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Applied Physics Letters
2022-07-04 | Journal article
DOI: 10.1063/5.0089236
Contributors: OmerFaruk Karadavut; Sandeep K. Chaudhuri; Joshua W. Kleppinger; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors

Journal of Crystal Growth
2022-04 | Journal article
DOI: 10.1016/j.jcrysgro.2022.126566
Part of ISSN: 0022-0248
Source: Self-asserted source
OMERFARUK KARADAVUT

Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

Journal of Crystal Growth
2022-04 | Journal article
DOI: 10.1016/j.jcrysgro.2022.126532
Part of ISSN: 0022-0248
Source: Self-asserted source
OMERFARUK KARADAVUT
grade
Preferred source (of 2)‎

Synthesis of CdZnTeSe single crystals for room temperature radiation detector fabrication: mitigation of hole trapping effects using a convolutional neural network

Journal of Materials Science: Materials in Electronics
2022-01-06 | Journal article
DOI: 10.1007/s10854-021-07623-6
Part of ISSN: 0957-4522
Part of ISSN: 1573-482X
Source: Self-asserted source
OMERFARUK KARADAVUT

Crack Free Cr Coatings from Cr3+ Electrolyte

Journal of The Electrochemical Society
2022-01-01 | Journal article
DOI: 10.1149/1945-7111/ac4bfa
Part of ISSN: 0013-4651
Part of ISSN: 1945-7111
Source: Self-asserted source
OMERFARUK KARADAVUT

Characterization of vertical Bridgman grown Cd0.9Zn0.1Te0.97Se0.03 single crystal for room-temperature radiation detection

Journal of Materials Science: Materials in Electronics
2021-11 | Journal article
DOI: 10.1007/s10854-021-07051-6
Part of ISSN: 0957-4522
Part of ISSN: 1573-482X
Source: Self-asserted source
OMERFARUK KARADAVUT

High-resolution 4H-SiC Schottky barrier detectors on 250 micron epitaxial layers for harsh environment applications

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII
2021-09-01 | Conference paper
DOI: 10.1117/12.2596470
Source: Self-asserted source
OMERFARUK KARADAVUT

Observation of minority carrier traps using C-DLTS in Au/SiO2/n-4H-SiC vertical MOS capacitor

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII
2021-09-01 | Conference paper
DOI: 10.1117/12.2596464
Source: Self-asserted source
OMERFARUK KARADAVUT

High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Journal of Applied Physics
2021-08-21 | Journal article
DOI: 10.1063/5.0059151
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
OMERFARUK KARADAVUT

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Applied Physics Letters
2021-08-09 | Journal article
DOI: 10.1063/5.0064036
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
OMERFARUK KARADAVUT

Investigation of resolution limiting traps in single-crystalline CVD diamond radiation detector using DFT calculations

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII
2021-08-01 | Conference paper
DOI: 10.1117/12.2596468
Source: Self-asserted source
OMERFARUK KARADAVUT

Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection

Crystals
2021-07-16 | Journal article
DOI: 10.3390/cryst11070827
Part of ISSN: 2073-4352
Source: Self-asserted source
OMERFARUK KARADAVUT

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Journal of Applied Physics
2021-06-28 | Journal article
DOI: 10.1063/5.0049218
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
OMERFARUK KARADAVUT

Behavioral Contrast of Electron and Hole Transport in High-Resolution Diamond Detectors: A Biparametric Correlation Study

IEEE Electron Device Letters
2021-02 | Journal article
DOI: 10.1109/led.2020.3048949
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
OMERFARUK KARADAVUT
grade
Preferred source (of 2)‎

First Principle Defect Analysis in 150 µm 4H-SiC Epitaxial Layer Schottky Barrier Detectors

2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
2020-10-31 | Conference paper
DOI: 10.1109/nss/mic42677.2020.9507936
Source: Self-asserted source
OMERFARUK KARADAVUT

Investigation on Cd0.9Zn0.1Te1-ySey single crystals grown by vertical Bridgman technique for high-energy gamma radiation detectors

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXII
2020-08-20 | Conference paper
DOI: 10.1117/12.2570592
Source: Self-asserted source
OMERFARUK KARADAVUT

Peer review (5 reviews for 3 publications/grants)

Review activity for Chinese Optics Letters. (2)
Review activity for Electronics letters. (2)
Review activity for Journal electrical and electronic engineering. (1)
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