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Works (28)

Design of on-chip temperature-based digital signal processing for customized wireless microcontroller

Indonesian Journal of Electrical Engineering and Computer Science
2019 | Journal article
EID:

2-s2.0-85062387714

Part of ISBN:

25024760 25024752

Contributors: Binti Faezal, S.F.R.; Md Isa, M.N.; Taking, S.; Mohyar, S.N.; Jambek, A.B.; Harun, A.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Self-switching diodes as RF rectifiers: Evaluation methods and current progress

Bulletin of Electrical Engineering and Informatics
2019 | Journal article
EID:

2-s2.0-85071382329

Part of ISBN:

23029285 20893191

Contributors: Zakaria, N.F.; Kasjoo, S.R.; Isa, M.M.; Zailan, Z.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

16×16 fast signed multiplier using Booth and Vedic architecture

AIP Conference Proceedings
2018 | Conference paper
EID:

2-s2.0-85058689090

Part of ISBN:

15517616 0094243X

Contributors: Shing, L.Z.; Hussin, R.; Kamarudin, A.; Mohyar, S.N.; Taking, S.; Aziz, M.H.A.; Ahmad, N.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Human trapped in a parked car recognition using thermal image approach

AIP Conference Proceedings
2018 | Conference paper
EID:

2-s2.0-85058678545

Part of ISBN:

15517616 0094243X

Contributors: Cheah, S.J.; Hussin, R.; Kamarudin, A.; Mohyar, S.N.; Taking, S.; Aziz, M.H.A.; Kasjoo, S.R.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

InGaAs-based planar barrier diode as microwave rectifier

Japanese Journal of Applied Physics
2018 | Journal article
EID:

2-s2.0-85047899812

Part of ISBN:

13474065 00214922

Contributors: Zakaria, N.F.; Kasjoo, S.R.; Zailan, Z.; Isa, M.M.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

An overview of self-switching diode rectifiers using green materials

AIP Conference Proceedings
2017 | Conference paper
EID:

2-s2.0-85030675368

Part of ISBN:

15517616 0094243X

Contributors: Kasjoo, S.R.; Zailan, Z.; Zakaria, N.F.; Isa, M.M.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Dielectric and microstructural properties of BaTiO<inf>3</inf> and Ba<inf>0.9925</inf>Er<inf>0.0075</inf>TiO<inf>3</inf> ceramics

EPJ Web of Conferences
2017 | Conference paper
EID:

2-s2.0-85036652832

Part of ISBN:

2100014X 21016275

Contributors: Ismail, F.A.; Maulat Osman, R.A.; Idris, M.S.; Taking, S.; Zahid Jamal, Z.A.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Effect on different geometric dimensions of metal-oxide-semiconductor capacitor by using TCAD simulation

2016 3rd International Conference on Electronic Design, ICED 2016
2017 | Conference paper
EID:

2-s2.0-85011029471

Contributors: Zulkifeli, M.A.; Sabki, S.N.; Jamuar, S.S.; Taking, S.; Azmi, N.A.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Indoor navigation and localisation application system

2016 3rd International Conference on Electronic Design, ICED 2016
2017 | Conference paper
EID:

2-s2.0-85011092496

Contributors: Joanne, W.; Taking, S.; Isa, N.; Chao, K.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Non-linear analysis of Self-Switching Diodes as microwave rectifiers

Journal of Engineering and Applied Sciences
2017 | Journal article
EID:

2-s2.0-85030129281

Part of ISBN:

18187803 1816949X

Contributors: Kasjoo, S.R.; Zailan, Z.; Taking, S.; Muhamad, W.Z.A.W.; Isa, M.M.; Arshad, M.K.M.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator

Solid-State Electronics
2017 | Journal article
EID:

2-s2.0-85024487678

Part of ISBN:

00381101

Contributors: Zakaria, N.F.; Kasjoo, S.R.; Zailan, Z.; Isa, M.M.; Taking, S.; Arshad, M.K.M.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Rectification performance of self-switching diode in various geometries using ATLAS simulator

2016 3rd International Conference on Electronic Design, ICED 2016
2017 | Conference paper
EID:

2-s2.0-85011029556

Contributors: Zakaria, N.F.; Kasjoo, S.R.; Zailan, Z.; Isa, M.M.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Rectification performance of self-switching diodes in silicon substrate using device simulator

2016 3rd International Conference on Electronic Design, ICED 2016
2017 | Conference paper
EID:

2-s2.0-85011035363

Contributors: Zailan, Z.; Kasjoo, S.R.; Zakaria, N.F.; Isa, M.M.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Simulation of unipolar planar device with asymmetrical barrier profile: A planar barrier diode

AIP Conference Proceedings
2017 | Conference paper
EID:

2-s2.0-85030694746

Part of ISBN:

15517616 0094243X

Contributors: Zailan, Z.; Kasjoo, S.R.; Zakaria, N.Fa.; Isa, M.M.; Arshad, M.K.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

The effect of different dielectric materials in designing high performance Metal-Insulator-Metal (MIM) capacitors

International Journal of Electrical and Computer Engineering
2017 | Journal article
EID:

2-s2.0-85021123213

Part of ISBN:

20888708

Contributors: Zulkifeli, M.A.; Sabki, S.N.; Taking, S.; Azmi, N.A.; Jamuar, S.S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Characterization of self-switching diodes as microwave rectifiers using ATLAS simulator

2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
2016 | Conference paper
EID:

2-s2.0-84985915547

Contributors: Zailan, Z.; Zakaria, N.F.; Isa, M.M.; Taking, S.; Arshad, M.K.M.; Kasjoo, S.R.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation

2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
2016 | Conference paper
EID:

2-s2.0-84986004495

Contributors: Zakaria, N.F.; Zailan, Z.; Isa, M.M.; Taking, S.; Arshad, M.K.M.; Kasjoo, S.R.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

AIP Conference Proceedings
2015 | Conference paper
EID:

2-s2.0-84949324509

Part of ISBN:

15517616 0094243X

Contributors: Zahari, S.M.; Norizan, M.N.; Mohamad, I.S.; Osman, R.A.M.; Taking, S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

Physica Status Solidi (C) Current Topics in Solid State Physics
2014 | Journal article
EID:

2-s2.0-84898543527

Part of ISBN:

16101642 18626351

Contributors: Brown, R.; Al-Khalidi, A.; Macfarlane, D.; Taking, S.; Ternent, G.; Thayne, I.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Ferroelectric and relaxor ferroelectric to paralectric transition based on Lead Magnesium Niobate (PMN) materials

Advanced Materials Research
2013 | Book
EID:

2-s2.0-84886256186

Part of ISBN:

10226680

Contributors: Osman, R.A.M.; Idris, M.S.; Zahid Jamal, Z.A.; Taking, S.; Sabki, S.N.; Poopalan, P.A.L.; Norizan, M.N.; Mohamad, I.S.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

AlN/GaN MOS-HEMTs with thermally grown Al<inf>2</inf>O<inf>3</inf> passivation

IEEE Transactions on Electron Devices
2011 | Journal article
EID:

2-s2.0-79955538637

Part of ISBN:

00189383

Contributors: Taking, S.; MacFarlane, D.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

AlN/GaN-based MOS-HEMT technology: Processing and device results

Active and Passive Electronic Components
2011 | Journal article
EID:

2-s2.0-79952126122

Part of ISBN:

08827516 15635031

Contributors: Taking, S.; MacFarlane, D.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

DC and RF performance of AlN/GaN MOS-HEMTs

IEICE Transactions on Electronics
2011 | Journal article
EID:

2-s2.0-79955610398

Part of ISBN:

17451353 09168524

Contributors: Taking, S.; Macfarlane, D.; Khokhar, A.Z.; Dabiran, A.M.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Small signal and pulse characteristics of AlN/GaN MOS-HEMTs

European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
2011 | Conference paper
EID:

2-s2.0-84855802306

Contributors: MacFarlane, D.; Taking, S.; Murad, S.K.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

DC and RF performance of AlN/GaN MOS-HEMTs

Asia-Pacific Microwave Conference Proceedings, APMC
2010 | Conference paper
EID:

2-s2.0-79955732422

Contributors: Taking, S.; MacFarlane, D.; Khokhar, A.Z.; Dabiran, A.M.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Development of enhancement mode AlGaN/GaN MOS-HEMTs using localized gate-foot oxidation

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings
2010 | Conference paper
EID:

2-s2.0-78649531806

Contributors: Banerjee, A.; Taking, S.; MacFarlane, D.; Dabiran, A.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

New process for low sheet and ohmic contact resistance of AlN/GaN MOS-HEMTs

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings
2010 | Conference paper
EID:

2-s2.0-78649552194

Contributors: Taking, S.; Khokhar, A.Z.; MacFarlane, D.; Sharabi, S.; Dabiran, A.M.; Wasige, E.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al <inf>2</inf>O<inf>3</inf> formed by thermal oxidation of evaporated aluminium

Electronics Letters
2010 | Journal article
EID:

2-s2.0-77149173143

Part of ISBN:

00135194

Contributors: Taking, S.; Banerjee, A.; Zhou, H.; Li, X.; Khokhar, A.Z.; Oxland, R.; McGregor, I.; Bentley, S.; Rahman, F.; Thayne, I. et al.
Source: Self-asserted source
Sanna Taking via Scopus - Elsevier