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Scopus Author ID: 57188833238
ResearcherID: GWQ-0890-2022

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Employment (2)

National Center for Physics: Islamabad, PK

2019-10-15 to present | Research Associate (Solid State Electronic Devices Lab)
Employment
Source: Self-asserted source
Amna Siddiqui

Khalifa University of Science and Technology: Abu Dhabi, Abu Dhabi, AE

2015-09-01 to 2018-05-31 | Teaching and Research Assistant (Electrical and Computer Engineering)
Employment
Source: Self-asserted source
Amna Siddiqui

Education and qualifications (3)

Quaid-i-Azam University Department of Electronics: Islamabad, PK

2020-02-13 to present | Doctor of Philosophy (Department of Electronics)
Education
Source: Self-asserted source
Amna Siddiqui

Khalifa University of Science, Technology and Research: Abu Dhabi, AE

2015-08-27 to 2017-07-31 | Masters of Science (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Amna Siddiqui

Khalifa University of Science, Technology and Research: Abu Dhabi, AE

2011-09-11 to 2015-06-30 | Bachelors of Science (Electrical and Electronics Engineering)
Education
Source: Self-asserted source
Amna Siddiqui

Works (18)

Ion Implantation‐Induced Bandgap Modifications in the ALD TiO2 Thin Films

physica status solidi (a)
2024-07-15 | Journal article
DOI: 10.1002/pssa.202400205
Contributors: Shahbaz Afzal; Muhammad Usman; Aamenah Siddiqui; Rabia Yasmin Khosa; Anders Hallén
Source: check_circle
Crossref

Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes

physica status solidi (a)
2023-11 | Journal article
DOI: 10.1002/pssa.202300300
Contributors: Aamenah Siddiqui; Anders Hallén; Muhammad Usman
Source: check_circle
Crossref

High-k dielectrics for 4H-silicon carbide: present status and future perspectives

Journal of Materials Chemistry C
2021 | Journal article
DOI: 10.1039/d0tc05008c
Part of ISSN: 2050-7526
Part of ISSN: 2050-7534
Contributors: Amna Siddiqui; Muhammad Usman; Rabia Y. Khosa
Source: Self-asserted source
Amna Siddiqui
grade
Preferred source (of 3)‎

Proton Irradiation in Simplified PERC Silicon Solar Cells: A Simulation-Based Framework

ECS Journal of Solid State Science and Technology
2021 | Journal article
DOI: 10.1149/2162-8777/ABFC24
WOSUID: WOS:000649131800001
Contributors: Siddiqui, Amna; Usman, Muhammad
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Radiation tolerance comparison of silicon and 4H-SiC Schottky diodes

Materials Science in Semiconductor Processing
2021 | Journal article
DOI: 10.1016/J.MSSP.2021.106085
WOSUID: WOS:000702879000005
Contributors: Siddiqui, Amna; Usman, Muhammad
Source: check_circle
Web of Science Researcher Profile Sync
grade
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Reliability of PERC Solar Cells under Alpha Irradiation: A Simulation-Based Study for Space Applications

ECS Journal of Solid State Science and Technology
2021 | Journal article
DOI: 10.1149/2162-8777/ABDADF
WOSUID: WOS:000612841000001
Contributors: Siddiqui, Amna; Usman, Muhammad
Source: check_circle
Web of Science Researcher Profile Sync
grade
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Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes

IEEE Journal of the Electron Devices Society
2019 | Journal article
DOI: 10.1109/jeds.2019.2896971
Part of ISSN: 2168-6734
Contributors: Muhammad Shurrab; Amna Siddiqui; Shakti Singh
Source: Self-asserted source
Amna Siddiqui
grade
Preferred source (of 3)‎

Bipolar SRAM Memory Architecture in 4H-SiC for Harsh Environment Applications

IEEE Transactions on Electron Devices
2018 | Journal article
DOI: 10.1109/TED.2018.2849061
WOSUID: WOS:000439649900020
Contributors: Elgabra, Hazem; Siddiqui, Amna; Singh, Shakti
Source: check_circle
Web of Science Researcher Profile Sync
grade
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications

IEEE Journal of the Electron Devices Society
2018 | Journal article
DOI: 10.1109/jeds.2017.2785327
Part of ISSN: 2168-6734
Contributors: Amna Siddiqui; Hazem Elgabra; Shakti Singh
Source: Self-asserted source
Amna Siddiqui
grade
Preferred source (of 3)‎

Design and analysis of SRAM cell in 4H-SiC

Midwest Symposium on Circuits and Systems
2017 | Conference paper
DOI: 10.1109/MWSCAS.2016.7870160
EID:

2-s2.0-85015849925
Contributors: Elgabra, H.; Siddiqui, A.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier

Surface passivation method for optimum performance of 4H-SiC devices

Midwest Symposium on Circuits and Systems
2017 | Conference paper
DOI: 10.1109/MWSCAS.2016.7870135
EID:

2-s2.0-85015907922
Contributors: Siddiqui, A.; Elgabra, H.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier

Design and simulation of a novel bipolar digital logic technology for a balanced performance in 4H-SiC

IEEE Electron Device Letters
2016 | Journal article
DOI: 10.1109/LED.2016.2523760
EID:

2-s2.0-84963971911
Contributors: Elgabra, H.; Siddiqui, A.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier
grade
Preferred source (of 2)‎

Novel vs conventional bipolar logic circuit topologies in 4H-SiC

Materials Science Forum
2016 | Book
DOI: 10.4028/www.scientific.net/MSF.858.1103
EID:

2-s2.0-84971524812
Contributors: Elgabra, H.; Siddiqui, A.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier

Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications

Japanese Journal of Applied Physics
2016 | Journal article
DOI: 10.7567/JJAP.55.04ER08
EID:

2-s2.0-84963690678
Contributors: Elgabra, H.; Siddiqui, A.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier
grade
Preferred source (of 2)‎

Surface Passivation Method for Optimum Performance of 4H-SiC Devices

IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
2016 | Conference paper
WOSUID: WOS:000404343800196
Contributors: Siddiqui, Amna; Elgabra, Hazem; Singh, Shakti
Source: check_circle
Web of Science Researcher Profile Sync

The Current Status and the Future Prospects of Surface Passivation in 4H-SiC Transistors

IEEE Transactions on Device and Materials Reliability
2016 | Journal article
DOI: 10.1109/TDMR.2016.2587160
EID:

2-s2.0-84986612905
Contributors: Siddiqui, A.; Elgabra, H.; Singh, S.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier
grade
Preferred source (of 3)‎

High temperature simulation of 4H-SiC bipolar circuits

IEEE Journal of the Electron Devices Society
2015-02-26 | Journal article
DOI: 10.1109/JEDS.2015.2407380
Source: Self-asserted source
Amna Siddiqui

Machine-learning-based feature selection techniques for large-scale network intrusion detection

Proceedings - International Conference on Distributed Computing Systems
2014 | Conference paper
DOI: 10.1109/ICDCSW.2014.14
EID:

2-s2.0-84988385241
Contributors: Al-Jarrah, O.Y.; Siddiqui, A.; Elsalamouny, M.; Yoo, P.D.; Muhaidat, S.; Kim, K.
Source: Self-asserted source
Amna Siddiqui via Scopus - Elsevier
grade
Preferred source (of 2)‎

Peer review (5 reviews for 3 publications/grants)

Review activity for Advanced materials. (2)
Review activity for IEEE journal of the Electron Devices Society. (2)
Review activity for Journal of micromechanics and microengineering. (1)
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