Personal information

GaN, MVSG, Energy harvesting, IoT, sensors, Fail-open
United States, India

Biography

Ujwal Radhakrishna (Member, IEEE) received the bachelor’s and master’s degrees in electrical engineering from IIT Madras, India, in 2010 and 2011,
respectively, and the M.S. and Ph.D. degrees in electrical engineering from the Massachusetts Institute of Technology, in 2013 and 2016, respectively.
He is currently an Analog Design Engineer with the Kilby Research Labs, Texas Instruments Inc., Santa Clara, CA, USA.
His research interests include device modeling, WBG and power devices, MEMS and energy transducers, energy harvesting, and RF/HV circuit design.

Activities

Employment (1)

Texas Instruments Inc: Santa Clara, CA, US

2018-09-01 to present | Analog Design Engineer (Kilby Research Labs)
Employment
Source: Self-asserted source
Ujwal Radhakrishna

Education and qualifications (1)

Massachusetts Institute of Technology: Cambridge, MA, US

Education
Source: check_circle
Massachusetts Institute of Technology

Professional activities (1)

IEEE: Santa Clara, CA, US

2012 to present | Member (EDS Chapter)
Membership
Source: Self-asserted source
Ujwal Radhakrishna

Funding (1)

Network for Computational Nanotechnology - NEEDS Node

2012-09-01 to 2018-08-31 | Grant
Directorate for Engineering (Arlington, US)
GRANT_NUMBER: 1227020
Source: Self-asserted source
Ujwal Radhakrishna via DimensionsWizard

Works (48)

Impact of Duffing and Piezoelectric-Coupling Nonlinearities on Piezoelectric Vibration Energy Harvesting

IEEE Sensors Journal
2024-03-15 | Journal article
Contributors: Sheng Zhao; Ujwal Radhakrishna; Jeffrey H. Lang
Source: check_circle
Crossref

FAIL-OPEN ISOLATOR

2023-08-24 | Patent
URI:

lens.org/176-932-639-302-88X

PAT:

US 2023/0268270 A1

Contributors: Ujwal Radhakrishna; Vinod Rai; Yogesh Ramadass; Anant Kamath; Kashyap Barot
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Comprehensive MVSG Compact Model for Power GaN Devices

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2023-05-28 | Conference paper
Contributors: Ryan Fang; Yijing Feng; Jessica Chong; Kaiman Chan; Ujwal Radhakrishna; Lan We
Source: Self-asserted source
Ujwal Radhakrishna

ACTIVE METAL FUSES FOR DC-EOS AND SURGE PROTECTION

2023-03-30 | Patent
URI:

lens.org/067-880-436-639-403

PAT:

US 2023/0099861 A1

Contributors: Ramadass Yogesh K; Radhakrishna Ujwal; Rai Vinod Kuniganahalli
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

2022-11-17 | Patent
URI:

lens.org/188-748-753-061-771

PAT:

WO 2022/240713 A1

Contributors: Sadovnikov Alexei; Haynie Sheldon; Radhakrishna Ujwal
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

2022-11-17 | Patent
URI:

lens.org/175-761-296-225-156

PAT:

US 2022/0367388 A1

Contributors: Sadovnikov Alexei; Haynie Sheldon Douglas; Radhakrishna Ujwal
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2022-10-16 | Conference paper
Contributors: Pilsoon Choi; Ryan Fang; Lan Wei; Slim Boumaiza; Ujwal Radhakrishna; Eugene Fitzgerald
Source: Self-asserted source
Ujwal Radhakrishna

MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2022-10-16 | Conference paper
Contributors: Ryan Fang; Dylan Ma; Ujwal Radhakrishna; Lan Wei
Source: Self-asserted source
Ujwal Radhakrishna

TEMPERATURE CONTROL FOR POWER DEVICES

2022-05-05 | Patent
URI:

lens.org/019-514-551-975-110

PAT:

WO 2022/093667 A1

Contributors: Lazaro Orlando; Merkin Timothy; Broze John; Xiong Matthew; Ramadass Yogesh; Radhakrishna Ujwal
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

TEMPERATURE CONTROL FOR POWER DEVICES

2022-05-05 | Patent
URI:

lens.org/188-464-838-655-62X

PAT:

US 2022/0140826 A1

Contributors: Lazaro Orlando; Merkin Timothy; Broze John Russell; Xiong Matthew; Ramadass Yogesh Kumar; Radhakrishna Ujwal
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Method and apparatus for improving performance of power path protection device

2022-03-04 | Patent
URI:

lens.org/094-344-700-449-095

PAT:

CN 114142437 A

Contributors: Ramadass Yogesh Kumar; Radhakrishnan Usha; Morini Jeffrey
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Low-voltage broadband piezoelectric vibration energy harvesting enabled by a highly-coupled harvester and tunable PSSHI circuit

Smart Materials and Structures
2021-12-01 | Journal article
Contributors: Sheng Zhao; Ujwal Radhakrishna; Jeffrey H Lang; Dennis Buss
Source: check_circle
Crossref

Resource Allocation in Vibration Energy Harvesters

Journal of Microelectromechanical Systems
2021-10 | Journal article
Contributors: Ujwal Radhakrishna; Yuechen Yang; Abraham Shin; Jeffrey H. Lang
Source: check_circle
Crossref

METHODS AND APPARATUS TO IMPROVE PERFORMANCE OF POWER PATH PROTECTION DEVICES

2021-03-04 | Patent
URI:

lens.org/009-381-164-556-988

PAT:

US 2021/0066909 A1

Contributors: Ramadass Yogesh Kumar; Radhakrishna Ujwal; Morroni Jeffrey
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Power–bandwidth–voltage interaction in piezoelectric vibration energy harvesters with constrained load voltage

Smart Materials and Structures
2021-02-01 | Journal article
Contributors: Sheng Zhao; Ujwal Radhakrishna; Jeffrey H Lang
Source: check_circle
Crossref

An Electromagnetic Translational Vibration Energy Harvester Fabricated in MP35N Alloy

Journal of Microelectromechanical Systems
2020-12 | Journal article
Contributors: Yuechen Yang; Ujwal Radhakrishna; James F. Hunter; Thomas W. Eagar; Jeffrey H. Lang
Source: check_circle
Crossref

Physics-based III-Nitride device modeling

III-Nitride Electronic Devices
2019 | Book chapter
Part of ISBN: 9780128175446
Part of ISSN: 0080-8784
Source: Self-asserted source
Ujwal Radhakrishna

A Silicon MEMS EM vibration energy harvester

Journal of Physics: Conference Series
2019-11 | Conference paper
Part of ISSN: 1742-6588
Part of ISSN: 1742-6596
Source: Self-asserted source
Ujwal Radhakrishna

Co-optimization of a piezoelectric energy harvesting system for broadband operation

Journal of Physics: Conference Series
2019-11 | Conference paper
Part of ISSN: 1742-6588
Part of ISSN: 1742-6596
Source: Self-asserted source
Ujwal Radhakrishna

Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2019-11 | Conference paper
Source: Self-asserted source
Ujwal Radhakrishna

High-linearity transistors

2019-10-08 | Patent
URI:

lens.org/064-959-164-443-388

PAT:

US 10439059 B2

Contributors: Palacios Tomas Apostol; Jayanta-joglekar Sameer; Radhakrishna Ujwal
Source: Self-asserted source
Ujwal Radhakrishna via The Lens

Two-dimensional MoS2-enabled flexible rectenna for wireless energy harvesting in the Wi-Fi band (Conference Presentation)

Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
2019-09-10 | Conference paper
Source: Self-asserted source
Ujwal Radhakrishna

Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

Nature
2019-02 | Journal article
Part of ISSN: 0028-0836
Part of ISSN: 1476-4687
Source: Self-asserted source
Ujwal Radhakrishna

Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

IEEE Transactions on Electron Devices
2019-01 | Journal article
Contributors: Ujwal Radhakrishna; Pilsoon Choi; Dimitri A. Antoniadis
Source: check_circle
Crossref

Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V<inf>T</inf>engineering for transconductance compensation

Technical Digest - International Electron Devices Meeting, IEDM
2018 | Conference paper
EID:

2-s2.0-85043244255

Contributors: Joglekar, S.; Radhakrishna, U.; Piedra, D.; Antoniadis, D.; Palacios, T.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

A tunnel FET compact model including non-idealities with verilogy implementation

Solid-State Electronics
2018-09 | Journal article
Contributors: Redwan N. Sajjad; Ujwal Radhakrishna; Dimitri A. Antoniadis
Source: check_circle
Crossref

A MEMS Magnetic-Based Vibration Energy Harvester

Journal of Physics: Conference Series
2018-07 | Conference paper
Part of ISSN: 1742-6588
Part of ISSN: 1742-6596
Source: Self-asserted source
Ujwal Radhakrishna

MoS2 Phase-junction-based Schottky Diodes for RF Electronics

2018 IEEE/MTT-S International Microwave Symposium - IMS
2018-06 | Conference paper
Source: Self-asserted source
Ujwal Radhakrishna

A low-power integrated power converter for an electromagnetic vibration energy harvester with 150 mV-AC cold startup, frequency tuning, and 50 Hz AC-to-DC conversion

2018 IEEE Custom Integrated Circuits Conference (CICC)
2018-04 | Conference paper
Source: Self-asserted source
Ujwal Radhakrishna

Negative Capacitance Carbon Nanotube FETs

IEEE Electron Device Letters
2018-02 | Journal article
Contributors: Tathagata Srimani; Gage Hills; Mindy D. Bishop; Ujwal Radhakrishna; Ahmad Zubair; Rebecca S. Park; Yosi Stein; Tomas Palacios; Dimitri Antoniadis; Max M. Shulaker
Source: check_circle
Crossref

GaN device-circuit interaction on RF linear power amplifier designed using the MVSG compact model

2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
2017 | Conference paper
EID:

2-s2.0-85045988815

Contributors: Choi, P.; Radhakrishna, U.; Antoniadis, D.; Fitzgerald, E.A.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

High-yield large area MoS<inf>2</inf>technology: Material, device and circuits co-optimization

Technical Digest - International Electron Devices Meeting, IEDM
2017 | Conference paper
EID:

2-s2.0-85014455049

Contributors: Yu, L.; El-Damak, D.; Radhakrishna, U.; Zubair, A.; Piedra, D.; Ling, X.; Lin, Y.; Zhang, Y.; Lee, Y.-H.; Antoniadis, D. et al.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Linearity Enhancement of a Fully Integrated 6-GHz GaN Power Amplifier

IEEE Microwave and Wireless Components Letters
2017 | Journal article
EID:

2-s2.0-85030317724

Contributors: Choi, P.; Radhakrishna, U.; Boon, C.C.; Peh, L.-S.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model

Technical Digest - International Electron Devices Meeting, IEDM
2017 | Conference paper
EID:

2-s2.0-85014500777

Contributors: Radhakrishna, U.; Choi, P.; Grajal, J.; Peh, L.-S.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

IEEE Electron Device Letters
2017 | Journal article
EID:

2-s2.0-85028991386

Contributors: Khan, A.I.; Radhakrishna, U.; Salahuddin, S.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS<inf>2</inf>Circuits with E-Mode FETs for Large-Area Electronics

Nano Letters
2016 | Journal article
EID:

2-s2.0-84991393475

Contributors: Yu, L.; El-Damak, D.; Radhakrishna, U.; Ling, X.; Zubair, A.; Lin, Y.; Zhang, Y.; Chuang, M.-H.; Lee, Y.-H.; Antoniadis, D. et al.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Negative Capacitance Behavior in a Leaky Ferroelectric

IEEE Transactions on Electron Devices
2016 | Journal article
EID:

2-s2.0-84993949396

Contributors: Khan, A.I.; Radhakrishna, U.; Chatterjee, K.; Salahuddin, S.; Antoniadis, D.A.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications

IEEE Transactions on Power Electronics
2016-08 | Journal article
Part of ISSN: 0885-8993
Part of ISSN: 1941-0107
Source: Self-asserted source
Ujwal Radhakrishna
grade
Preferred source (of 2)‎

A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model

IEEE Transactions on Microwave Theory and Techniques
2015 | Journal article
EID:

2-s2.0-85027930286

Contributors: Choi, P.; Goswami, S.; Radhakrishna, U.; Khanna, D.; Boon, C.-C.; Lee, H.-S.; Antoniadis, D.; Peh, L.-S.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

GaNFET compact model for linking device physics, high voltage circuit design and technology optimization

Technical Digest - International Electron Devices Meeting, IEDM
2015 | Conference paper
EID:

2-s2.0-84964000418

Contributors: Radhakrishna, U.; Lim, S.; Choi, P.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation

Technical Digest - International Electron Devices Meeting, IEDM
2015 | Conference paper
EID:

2-s2.0-84938273615

Contributors: Radhakrishna, U.; Choi, P.; Goswami, S.; Peh, L.-S.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

MIT Virtual Source RF Model as a Tool for GaN-Based LNA and Oscillator Design

2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
2015 | Conference paper
EID:

2-s2.0-84962289448

Contributors: Radhakrishna, U.; Choi, P.; Peh, L.-S.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-FETs: Experiments, modeling, and design guidelines

Technical Digest - International Electron Devices Meeting, IEDM
2015 | Conference paper
EID:

2-s2.0-84964018955

Contributors: Yu, T.; Radhakrishna, U.; Hoyt, J.L.; Antoniadis, D.A.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

MIT virtual source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics
2014 | Journal article
EID:

2-s2.0-84898539188

Contributors: Radhakrishna, U.; Imada, T.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping

Technical Digest - International Electron Devices Meeting, IEDM
2013 | Conference paper
EID:

2-s2.0-84894381688

Contributors: Radhakrishna, U.; Piedra, D.; Zhang, Y.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection

Technical Digest - International Electron Devices Meeting, IEDM
2012 | Conference paper
EID:

2-s2.0-84876147199

Contributors: Radhakrishna, U.; Wei, L.; Lee, D.-S.; Palacios, T.; Antoniadis, D.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Effects of oxygen and forming gas annealing on ZnO TFTs

Materials Research Society Symposium Proceedings
2011 | Conference paper
EID:

2-s2.0-84859025297

Contributors: Huang, J.; Radhakrishna, U.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier

Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating

IEEE Transactions on Electron Devices
2011 | Journal article
EID:

2-s2.0-80054898410

Contributors: Radhakrishna, U.; DasGupta, A.; DasGupta, N.; Chakravorty, A.
Source: Self-asserted source
Ujwal Radhakrishna via Scopus - Elsevier