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Education and qualifications (1)

National Yang Ming Chiao Tung University: Hsinchu, TW

2018-03-01 to present | Ph. D (International College of Semiconductor Technology)
Education
Source: Self-asserted source
MING-WEN LEE

Works (7)

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

IEEE Journal of the Electron Devices Society
2023 | Journal article
Contributors: Ming-Wen Lee; Yueh-Chin Lin; Po-Sheng Chang; Yi-Fan Tsao; Heng-Tung Hsu; Chang-Fu Dee; Edward Yi Chang
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Crossref

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines
2023-12 | Journal article | Author
Contributors: MING-WEN LEE; Cheng-Wei Chuang; Francisco Gamiz; Edward-Yi Chang; Yueh-Chin Lin
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Multidisciplinary Digital Publishing Institute
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Preferred source (of 2)‎

Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Electronics
2023-10-19 | Journal article
Contributors: Che-Wei Hsu; Yueh-Chin Lin; Ming-Wen Lee; Edward-Yi Chang
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Crossref
grade
Preferred source (of 2)‎

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

physica status solidi (a)
2023-04 | Journal article
Contributors: Ming-Wen Lee; Yueh-Chin Lin; Kuan-Hsien Lai; You-Chen Weng; Heng-Tung Hsu; Edward Yi Chang
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Crossref

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

physica status solidi (a)
2023-04 | Journal article
Contributors: Ming-Wen Lee; Yueh-Chin Lin; Kuan-Hsien Lai; You-Chen Weng; Heng-Tung Hsu; Edward Yi Chang
Source: check_circle
Crossref

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Micromachines
2023-04-25 | Journal article
Contributors: Ming-Wen Lee; Yueh-Chin Lin; Heng-Tung Hsu; Francisco Gamiz; Edward-Yi Chang
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Crossref
grade
Preferred source (of 2)‎

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

IEEE Transactions on Electron Devices
2019-08 | Journal article
Contributors: Chia-Hsun Wu; Jian-You Chen; Ping-Cheng Han; Ming-Wen Lee; Kun-Sheng Yang; Huan-Chung Wang; Po-Chun Chang; Quang Ho Luc; Yueh-Chin Lin; Chang-Fu Dee et al.
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Crossref