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Employment (2)

Tokyo University of Agriculture and Technology: Koganei, Tokyo, JP

2019-03-01 to 2024-02-29 | Assistant Professor (Department of Applied Chemistry)
Employment
Source: Self-asserted source
Ken Goto

Tamura Corporation: Sayama, Saitama, JP

2010-06-01 to 2019-02-28 | Researcher (Core Technology Division)
Employment
Source: Self-asserted source
Ken Goto

Works (19)

High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy

Applied Physics Express
2023-09-01 | Journal article
Contributors: Junya Yoshinaga; Haruka Tozato; Takahito Okuyama; Shogo Sasaki; Guanxi Piao; Kazutada Ikenaga; Ken Goto; Yuzaburo Ban; Yoshinao Kumagai
Source: check_circle
Crossref

Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases

AIP Advances
2023-08-01 | Journal article
Contributors: Ken Goto; Tomo Ueno; Yoshinao Kumagai
Source: check_circle
Crossref

Comparison of triethylgallium and diethylgallium ethoxide for β-Ga2O3 growth by metalorganic vapor phase epitaxy

Journal of Vacuum Science & Technology A
2023-07-01 | Journal article
Contributors: Ken Goto; Taro Nishimura; Masato Ishikawa; Takahito Okuyama; Haruka Tozato; Shogo Sasaki; Kazutada Ikenaga; Yoshihiko Takinami; Hideaki Machida; Yoshinao Kumagai
Source: check_circle
Crossref

Characterization of electrical properties of β-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry

Japanese Journal of Applied Physics
2023-06-01 | Journal article
Contributors: Toshiyuki Iwamoto; Verdad C. Agulto; Shuang Liu; Youwei Wang; Valynn Katrine Mag-usara; Takashi Fujii; Ken Goto; Yoshinao Kumagai; Makoto Nakajima
Source: check_circle
Crossref

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition

Japanese Journal of Applied Physics
2023-06-01 | Journal article
Contributors: Akito Taguchi; Takumi Yamamoto; Kentaro Kaneko; Ken Goto; Takeyoshi Onuma; Tohru Honda; Yoshinao Kumagai; Shizuo Fujita; Tomohiro Yamaguchi
Source: check_circle
Crossref

Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics
2023-06-01 | Journal article
Contributors: Kazutada Ikenaga; Takahito Okuyama; Haruka Tozato; Taro Nishimura; Shogo Sasaki; Ken Goto; Masato Ishikawa; Yoshihiko Takinami; Hideaki Machida; Yoshinao Kumagai
Source: check_circle
Crossref

Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks

Japanese Journal of Applied Physics
2023-06-01 | Journal article
Contributors: Tomoka Nishikawa; Ken Goto; Hisashi Murakami; Yoshinao Kumagai; Masahiro Uemukai; Tomoyuki Tanikawa; Ryuji Katayama
Source: check_circle
Crossref

Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides

Japanese Journal of Applied Physics
2023-05-01 | Journal article
Contributors: Rie Togashi; Ken Goto; Masataka Higashiwaki; Yoshinao Kumagai
Source: check_circle
Crossref

Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy

Japanese Journal of Applied Physics
2023-01-01 | Journal article
Contributors: Rie Togashi; Haruka Ishida; Ken Goto; Masataka Higashiwaki; Yoshinao Kumagai
Source: check_circle
Crossref

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Applied Physics Express
2022-11-01 | Journal article
Contributors: Yoshinao Kumagai; Ken Goto; Toru Nagashima; Reo Yamamoto; Michał Boćkowski; Junji Kotani
Source: check_circle
Crossref

Effect of substrate orientation on homoepitaxial growth of β -Ga2O3 by halide vapor phase epitaxy

Applied Physics Letters
2022-03-07 | Journal article
Contributors: Ken Goto; Hisashi Murakami; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki; Yoshinao Kumagai
Source: check_circle
Crossref

Growth of twin-free cubic In2O3(111) thick layers on c-plane sapphire substrates by halide vapor phase epitaxy

Japanese Journal of Applied Physics
2021-12-01 | Journal article
Contributors: Ken Goto; Akane Mori; Hidetoshi Nakahata; Rie Togashi; Yoshinao Kumagai
Source: check_circle
Crossref

Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K

Journal of Physics D: Applied Physics
2021-07-29 | Journal article
Contributors: Xinyi Xia; Minghan Xian; Patrick Carey; Chaker Fares; Fan Ren; Marko Tadjer; S J Pearton; Thieu Quang Tu; Ken Goto; Akito Kuramata
Source: check_circle
Crossref

Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics
2021-04-01 | Journal article
Contributors: Ken Goto; Kazutada Ikenaga; Nami Tanaka; Masato Ishikawa; Hideaki Machida; Yoshinao Kumagai
Source: check_circle
Crossref

Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals

Applied Physics Letters
2021-02-15 | Journal article
Contributors: A. Karjalainen; I. Makkonen; J. Etula; K. Goto; H. Murakami; Y. Kumagai; F. Tuomisto
Source: check_circle
Crossref

Anisotropic complex refractive index of β-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy

Applied Physics Letters
2021-01-25 | Journal article
Contributors: Verdad C. Agulto; Kazuhiro Toya; Thanh Nhat Khoa Phan; Valynn Katrine Mag-usara; Jiajun Li; Melvin John F. Empizo; Toshiyuki Iwamoto; Ken Goto; Hisashi Murakami; Yoshinao Kumagai et al.
Source: check_circle
Crossref

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

physica status solidi (a)
2020-12 | Journal article
Contributors: Ken Goto; Nao Takekawa; Toru Nagashima; Reo Yamamoto; Galia Pozina; Rafael Dalmau; Raoul Schlesser; Ramón Collazo; Bo Monemar; Zlatko Sitar et al.
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Crossref

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

Applied Physics Letters
2020-12-14 | Journal article
Contributors: Abhishek Mishra; Taylor Moule; Michael J Uren; Man Hoi Wong; Ken Goto; Hisashi Murakami; Yoshinao Kumagai; Masataka Higashiwaki; Martin Kuball
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Crossref

Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β -Ga2O3 substrates

Applied Physics Letters
2020-11-30 | Journal article
Contributors: Ken Goto; Hidetoshi Nakahata; Hisashi Murakami; Yoshinao Kumagai
Source: check_circle
Crossref

Peer review (4 reviews for 4 publications/grants)

Review activity for APL electronic devices. (1)
Review activity for APL materials. (1)
Review activity for Journal of applied physics. (1)
Review activity for Journal of vacuum science & technology. (1)