Personal information

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Employment (1)

Chalmers University of Technology: Gothenburg, SE

2014-11-01 to present (Microtechnology and Nanoscience)
Employment
Source: Self-asserted source
David Niepce

Works (7)

Decoherence benchmarking of superconducting qubits

npj Quantum Information
2019 | Journal article
EID:

2-s2.0-85070088926

Contributors: Burnett, J.J.; Bengtsson, A.; Scigliuzzo, M.; Niepce, D.; Kudra, M.; Delsing, P.; Bylander, J.
Source: Self-asserted source
David Niepce via Scopus - Elsevier

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances
2019 | Journal article
EID:

2-s2.0-85070188671

Contributors: Rodrigues, I.H.; Niepce, D.; Pourkabirian, A.; Moschetti, G.; Schleeh, J.; Bauch, T.; Grahn, J.
Source: Self-asserted source
David Niepce via Scopus - Elsevier

High Kinetic Inductance NbN Nanowire Superinductors

Physical Review Applied
2019-04-04 | Journal article
Part of ISSN: 2331-7019
Source: Self-asserted source
David Niepce
grade
Preferred source (of 2)‎

Noise and loss of superconducting aluminium resonators at single photon energies

Journal of Physics: Conference Series
2018 | Conference paper
EID:

2-s2.0-85046078131

Contributors: Burnett, J.; Bengtsson, A.; Niepce, D.; Bylander, J.
Source: Self-asserted source
David Niepce via Scopus - Elsevier

Quantum Point Contact Transistor and ballistic field-effect transistors

Journal of Physics: Conference Series
2012 | Conference paper
EID:

2-s2.0-84873660931

Contributors: Grémion, E.; Niepce, D.; Cavanna, A.; Gennser, U.; Jin, Y.
Source: Self-asserted source
David Niepce via Scopus - Elsevier

Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation

Applied Physics Letters
2010 | Journal article
EID:

2-s2.0-78650344177

Contributors: Gŕmion, E.; Niepce, D.; Cavanna, A.; Gennser, U.; Jin, Y.
Source: Self-asserted source
David Niepce via Scopus - Elsevier

Theoretical and experimental results of a fully ballistic nano-FET with high gain

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
2008 | Conference paper
EID:

2-s2.0-60649104265

Contributors: Grémion, E.; Niepce, D.; Gennser, U.; Cavanna, A.; Jin, Y.
Source: Self-asserted source
David Niepce via Scopus - Elsevier