Personal information

Activities

Employment (1)

Belarusian State University: Minsk, BY

1987-09-01 to present | Associated Professor (Applied Mathematics and Computer Scince)
Employment
Source: Self-asserted source
Viktor Belko

Education and qualifications (2)

Belarusian State University: Minsk, BY

1995-09-01 to 1998-06-24 | PhD (Applied Mathematics and Computer Science)
Qualification
Source: Self-asserted source
Viktor Belko

Belarusian State University: Minsk, BY

1982-09-01 to 1987-06-24 | Master (Mechanical Mathematical Departmrnt)
Education
Source: Self-asserted source
Viktor Belko

Professional activities (2)

University of Oslo: Oslo, Oslo, NO

2004-02-01 to 2005-01-31 | invited researcher (Physics)
Invited position
Source: Self-asserted source
Viktor Belko

Helmholtz-Zentrum Dresden-Rossendorf: Dresden, Sachsen, DE

1998-09-01 to 1998-11-30 | invited researcher (Institute of Ion Beam Physics and Materials Research)
Invited position
Source: Self-asserted source
Viktor Belko

Works (16)

Численное моделирование высокоэнергетической ионной имплантации с использованием уравнений Фоккера–Планка

Журнал Белорусского государственного университета. Математика. Информатика
2017 | Journal article
Source: Self-asserted source
Viktor Belko

Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations

Thermal Investigations of ICs and Systems (THERMINIC)
2013 | Journal article
Source: Self-asserted source
Viktor Belko

Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations

THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings
2013 | Conference paper
EID:

2-s2.0-84898948455

Contributors: Burenkov, A.; Belko, V.; Lorenz, J.
Source: Self-asserted source
Viktor Belko via Scopus - Elsevier

Angular distributions of sputtered silicon at grazing gallium ion beam incidence

Nuclear Instruments and Methods in Physics Research Section B
2012 | Journal article
EID:

2-s2.0-84655170059

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Formation and diffusion of self-interstitial atoms in silicon crystals under hydrostatic pressure: Quantum-chemical simulation

ournal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
2009 | Journal article
EID:

2-s2.0-70350580543

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation

Physica B: Condensed Matter
2009 | Journal article
EID:

2-s2.0-74349128682

Contributors: Gusakov, V.; Belko, V.; Dorozhkin, N.
Source: Self-asserted source
Viktor Belko via Scopus - Elsevier

Effect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si< Ge> Crystals: Quantum-Chemical Simulations Ge

Solid State Phenomena
2008 | Journal article
EID:

2-s2.0-38549171317

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Frenkel pair accumulation in ion-and electron-irradiated SiC

Nuclear Instruments and Methods in Physics Research Section B
2006 | Journal article
EID:

2-s2.0-33744927125

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

A comparative study of the structure and energetics of elementary defects in 3C-and 4H-SiC

Journal of Physics: Condensed Matter
2004 | Journal article
EID:

2-s2.0-1642323582

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Atomic computer simulations of defect migration in 3C and 4H-SiC

Materials Science Forum
2004 | Book
EID:

2-s2.0-8744250182

Contributors: Gao, F.; Weber, W.J.; Posselt, M.; Belko, V.
Source: Self-asserted source
Viktor Belko via Scopus - Elsevier

Atomistic study of intrinsic defect migration in 3C-SiC

Physical Review B
2004 | Journal article
EID:

2-s2.0-42749105913

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Structures and energetics of defects: a comparative study of 3C-and 4H-SiC

Nuclear Instruments and Methods in Physics Research Section B
2004 | Journal article
EID:

2-s2.0-2342557266

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Improvement of the repulsive part of the classical interatomic potential for SiC

Nuclear Instruments and Methods in Physics Research Section B
2003 | Journal article
EID:

2-s2.0-0037379103

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Influence of polytypism on elementary processes of ion-beam-induced defect production in SiC

Nuclear Instruments and Methods in Physics Research Section B
2001 | Journal article
EID:

2-s2.0-0035362839

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

Ion implantation simulation in multilayered targets

Microelectronica
1998 | Journal article
EID:

2-s2.0-3643119252

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎

High-energy ion implantation simulation based on numerical solution of the Boltzmann transport equation

Nuclear Instruments and Methods in Physics Research Section B
1995 | Journal article
EID:

2-s2.0-0039715632

Source: Self-asserted source
Viktor Belko
grade
Preferred source (of 2)‎