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Works (5)

Exploring dielectric properties in atomistic models of amorphous boron nitride

Journal of Physics: Materials
2024-07-01 | Journal article
Contributors: Thomas Galvani; Ali K Hamze; Laura Caputo; Onurcan Kaya; Simon M-M Dubois; Luigi Colombo; Viet-Hung Nguyen; Yongwoo Shin; Hyeon-Jin Shin; Jean-Christophe Charlier et al.
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Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors

Journal of Applied Physics
2019-11-07 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Conrad Spindler; Thomas Galvani; Ludger Wirtz; Germain Rey; Susanne Siebentritt
Source: Self-asserted source
Thomas Galvani

Direct and indirect excitons in boron nitride polymorphs: A story of atomic configuration and electronic correlation

Physical Review B
2018-09-28 | Journal article
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Lorenzo Sponza; Hakim Amara; Claudio Attaccalite; Sylvain Latil; Thomas Galvani; Fulvio Paleari; Ludger Wirtz; François Ducastelle
Source: Self-asserted source
Thomas Galvani

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

2D Materials
2018-08-14 | Journal article
Part of ISSN: 2053-1583
Contributors: Fulvio Paleari; Thomas Galvani; Hakim Amara; François Ducastelle; Alejandro Molina-Sánchez; Ludger Wirtz
Source: Self-asserted source
Thomas Galvani

Excitons in boron nitride single layer

Physical Review B
2016-09-06 | Journal article
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Thomas Galvani; Fulvio Paleari; Henrique P. C. Miranda; Alejandro Molina-Sánchez; Ludger Wirtz; Sylvain Latil; Hakim Amara; François Ducastelle
Source: Self-asserted source
Thomas Galvani