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Keywords

color centers in SiC, diamond, hBN

Countries

China

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Employment (3)

Sichuan University: Chengdu, Sichuan, CN

2021-10-20 to present | professor
Employment
Source: Self-asserted source
Junfeng Wang

University of Science and Technology of China: Hefei, CN

2018-01-01 to 2021-10-01 | associate professor
Employment
Source: Self-asserted source
Junfeng Wang

Nanyang Technological University: Singapore, SG

2016-07-13 to 2017-12-01 | Postdoc
Employment
Source: Self-asserted source
Junfeng Wang

Education and qualifications (2)

University of Science and Technology of China: Hefei, CN

2011-09-01 to 2016-06-20 | PHD
Qualification
Source: Self-asserted source
Junfeng Wang

Shanxi University: Taiyuan, CN

2007-09-01 to 2011-06-20 | BS (Physics)
Qualification
Source: Self-asserted source
Junfeng Wang

Works (19)

Robust single modified divacancy color centers in 4H-SiC under resonant excitation

Nature Communications
2024-11-22 | Journal article
DOI: 10.1038/s41467-024-53662-y
Contributors: Zhen-Xuan He; Ji-Yang Zhou; Qiang Li; Wu-Xi Lin; Rui-Jian Liang; Jun-Feng Wang; Xiao-Lei Wen; Zhi-He Hao; Wei Liu; Shuo Ren et al.
Source: check_circle
Crossref

High-sensitivity silicon carbide divacancy-based temperature sensing

Nanoscale
2023 | Journal article
DOI: 10.1039/D3NR00430A
Contributors: Qin-Yue Luo; Shuang Zhao; Qi-Cheng Hu; Wei-Ke Quan; Zi-Qi Zhu; Jia-Jun Li; Jun-Feng Wang
Source: check_circle
Crossref

Room temperature coherent control of a single solid-state spin under anti-Stokes excitation

Physical Review B
2023-12-26 | Journal article
DOI: 10.1103/PhysRevB.108.235312
Contributors: Wu-Xi Lin; Jun-Feng Wang; Qiang Li; Ji-Yang Zhou; Zhen-Xuan He; Zhi-He Hao; Hao Li; Li-Xing You; Jin-Shi Xu; Chuan-Feng Li et al.
Source: check_circle
Crossref

Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide

Nature Materials
2023-04 | Journal article
DOI: 10.1038/s41563-023-01477-5
Part of ISSN: 1476-1122
Part of ISSN: 1476-4660
Contributors: Jun-Feng Wang; Lin Liu; Xiao-Di Liu; Qiang Li; Jin-Ming Cui; Di-Fan Zhou; Ji-Yang Zhou; Yu Wei; Hai-An Xu; Wan Xu et al.
Source: Self-asserted source
Junfeng Wang

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

Nature Communications
2021-12 | Journal article
DOI: 10.1038/s41467-021-23471-8
Part of ISSN: 2041-1723
Source: Self-asserted source
Junfeng Wang
grade
Preferred source (of 2)‎

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

National Science Review
2021-07-05 | Journal article
DOI: 10.1093/nsr/nwab122
Part of ISSN: 2095-5138
Part of ISSN: 2053-714X
Source: Self-asserted source
Junfeng Wang

Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature

ACS Photonics
2020-07-15 | Journal article
DOI: 10.1021/acsphotonics.0c00218
Part of ISSN: 2330-4022
Part of ISSN: 2330-4022
Source: Self-asserted source
Junfeng Wang

Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature

Physical Review Letters
2020-06-01 | Journal article
DOI: 10.1103/physrevlett.124.223601
Part of ISSN: 0031-9007
Part of ISSN: 1079-7114
Source: Self-asserted source
Junfeng Wang
grade
Preferred source (of 2)‎

Cavity-enhanced energy transfer between nano-emitters and monolayer graphene

Carbon
2020-05 | Journal article
DOI: 10.1016/j.carbon.2020.02.003
Part of ISSN: 0008-6223
Source: Self-asserted source
Junfeng Wang

Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Physical Review B
2020-02-11 | Journal article
DOI: 10.1103/physrevb.101.064102
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Source: Self-asserted source
Junfeng Wang

Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide

Nanoscale
2019 | Journal article
DOI: 10.1039/c9nr05938e
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Junfeng Wang

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

ACS Photonics
2019-07-17 | Journal article
DOI: 10.1021/acsphotonics.9b00451
Part of ISSN: 2330-4022
Part of ISSN: 2330-4022
Source: Self-asserted source
Junfeng Wang

Bright room temperature single photon source at telecom range in cubic silicon carbide

Nature Communications
2018-12 | Journal article
DOI: 10.1038/s41467-018-06605-3
Part of ISSN: 2041-1723
Source: Self-asserted source
Junfeng Wang

Coherent Control of Defect Spins in Silicon Carbide above 550 K

Physical Review Applied
2018-10-17 | Journal article
DOI: 10.1103/physrevapplied.10.044042
Part of ISSN: 2331-7019
Source: Self-asserted source
Junfeng Wang

Self-Protected Thermometry with Infrared Photons and Defect Spins in Silicon Carbide

Physical Review Applied
2017-10-25 | Journal article
DOI: 10.1103/physrevapplied.8.044015
Part of ISSN: 2331-7019
Source: Self-asserted source
Junfeng Wang

Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

Physical Review Applied
2017-06-16 | Journal article
DOI: 10.1103/physrevapplied.7.064021
Part of ISSN: 2331-7019
Source: Self-asserted source
Junfeng Wang

Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

ACS Photonics
2017-05-17 | Journal article
DOI: 10.1021/acsphotonics.7b00230
Part of ISSN: 2330-4022
Part of ISSN: 2330-4022
Source: Self-asserted source
Junfeng Wang

Coherence times of precise depth controlled NV centers in diamond

Nanoscale
2016 | Journal article
DOI: 10.1039/c5nr08690f
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Junfeng Wang

High-sensitivity temperature sensing using an implanted single nitrogen-vacancy center array in diamond

Physical Review B
2015-04-06 | Journal article
DOI: 10.1103/physrevb.91.155404
Part of ISSN: 1098-0121
Part of ISSN: 1550-235X
Source: Self-asserted source
Junfeng Wang

Peer review (14 reviews for 10 publications/grants)

Review activity for ACS photonics. (1)
Review activity for Applied physics letters. (2)
Review activity for Chemical physics. (1)
Review activity for Crystal growth & design. (1)
Review activity for Diamond and related materials. (2)
Review activity for Journal of applied physics. (1)
Review activity for Matter. (2)
Review activity for Nano letters. (2)
Review activity for Nature communications (1)
Review activity for npj quantum information. (1)
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