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Employment (1)

ShaanXi University of Science and Technology: Xi’an, CN

lecturer (Materials Institute of Atomic and Molecular Science)
Employment
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Lin Shang

Education and qualifications (2)

Taiyuan University of Technology: Taiyuan, CN

Education
Source: Self-asserted source
Lin Shang

Shaanxi Province: Xian, Shaanxi, CN

Qualification
Source: Self-asserted source
Lin Shang

Works (5)

Investigation of the growth temperature of AlGaAs barrier layer on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and AlGaAs single layer grown by molecular beam epitaxy (MBE)

Materials Science in Semiconductor Processing
2025-03 | Journal article
DOI: 10.1016/j.mssp.2024.109140
Contributors: Simin Liu; Lin Shang; Shufang Ma; Bocang Qiu; Zhi Yang; Haitao Feng; Junzhao Zhang; Ruisi Cheng; Bo Li; Bingshe Xu
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Crossref

Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE)

Materials Science in Semiconductor Processing
2025-01 | Journal article
DOI: 10.1016/j.mssp.2024.108860
Contributors: Lin Shang; Simin Liu; Shufang Ma; Bocang Qiu; Zhi Yang; Haitao Feng; Junzhao Zhang; Hailiang Dong; Bingshe Xu
Source: check_circle
Crossref

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Materials
2023-09-04 | Journal article
DOI: 10.3390/ma16176068
Contributors: Zhi Yang; Shuai Zhang; Shufang Ma; Yu Shi; Qingming Liu; Xiaodong Hao; Lin Shang; Bin Han; Bocang Qiu; Bingshe Xu
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Crossref
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Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

Materials Science in Semiconductor Processing
2022-08 | Journal article
DOI: 10.1016/j.mssp.2022.106666
Contributors: Lin Shang; Bingshe Xu; Shufang Ma; Huican Ouyang; Hengsheng Shan; Xiaodong Hao; Bin Han
Source: check_circle
Crossref

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Coatings
2021-02 | Journal article | Author
DOI: 10.3390/coatings11020188
Contributors: Lin Shang; Bingshe Xu; Shufang Ma; Qingming Liu; Huican Ouyang; Hengsheng Shan; Xiaodong Hao; Bin Han
Source: check_circle
Multidisciplinary Digital Publishing Institute
grade
Preferred source (of 2)‎
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