Personal information

Other IDs

Scopus Author ID: 57212552818

Activities

Collapse all

Works (13)

Preparation of NiO NWs by Thermal Oxidation for Highly Selective Gas-Sensing Applications

Sensors
2025-03-26 | Journal article
DOI: 10.3390/s25072075
Contributors: Marwa Ben Arbia; Sung-Ho Kim; Jun-Bo Yoon; Elisabetta Comini
Source: check_circle
Crossref

Growth Processing and Strategies: A Way to Improve the Gas Sensing Performance of Nickel Oxide-Based Devices

Chemosensors
2024-03-08 | Journal article
DOI: 10.3390/chemosensors12030045
Contributors: Marwa Ben Arbia; Elisabetta Comini
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Recent Advances in Low-Dimensional Metal Oxides via Sol-Gel Method for Gas Detection

Nanomaterials
2024-02-14 | Journal article
DOI: 10.3390/nano14040359
Contributors: Marwa Ben Arbia; Hicham Helal; Elisabetta Comini
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Optimization of CdZn<sub><i>y</i></sub>S<sub>1-<i>y</i></sub> Buffer Layer Properties for a ZnO/CZTS<sub><i>x</i></sub>Se<sub>1-<i>x</i></sub>/Mo Solar Cell to Enhance Conversion Efficiency

Journal of Electronic Materials
2023 | Journal article
DOI: 10.1007/S11664-022-09986-W
WOSUID: WOS:000875912300002
Contributors: Boubakeur, M.; Aissat, A.; Chenini, L.; Ben Arbia, M.; Maaref, H.; Vilcot, J. P.
Source: check_circle
Web of Science Researcher Profile Sync

Experimental and computational studies of CCTS material: Novel design of solar cell for high efficiency

Solar Energy
2023-09 | Journal article
DOI: 10.1016/j.solener.2023.111806
Part of ISSN: 0038-092X
Contributors: Omaima Guesmi; Marwa Ben Arbia; Faouzi Saidi; Mohamed Ben Rabeh; Hassen Maaref
Source: Self-asserted source
Marwa BEN ARBIA

Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Materials Science in Semiconductor Processing
2023-01 | Journal article
DOI: 10.1016/j.mssp.2022.107149
Contributors: Marwa Ben Arbia; Ilkay Demir; Navpreet Kaur; Faouzi Saidi; Dario Zappa; Elisabetta Comini; Ismail Altuntaş; Hassen Maaref
Source: check_circle
Crossref

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Materials Science in Semiconductor Processing
2022-03 | Journal article
DOI: 10.1016/j.mssp.2021.106411
Contributors: Marwa Ben Arbia; Badreddine Smiri; Ilkay Demir; Faouzi Saidi; Ismail Altuntas; Fredj Hassen; Hassen Maaref
Source: check_circle
Crossref

Electrical behavior of <scp>n‐GaAs</scp> based Schottky diode for different contacts: Temperature dependence of c <scp>urrent‐voltage</scp>

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2021-11 | Journal article
DOI: 10.1002/jnm.2916
Part of ISSN: 0894-3370
Part of ISSN: 1099-1204
Contributors: HICHAM HELAL; Zineb Benamara; Marwa Ben Arbia; Abdelaziz Rabehi; Abdallah Chabane Chaouche; Hassen Maaref
Source: Self-asserted source
Marwa BEN ARBIA

A study of current-voltage and capacitance-voltage characteristics of Au/n-GaAs and Au/GaN/n-GaAs Schottky diodes in wide temperature range

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2020 | Journal article
DOI: 10.1002/jnm.2714
EID:

2-s2.0-85077986903
Contributors: Helal, H.; Benamara, Z.; Arbia, M.B.; Khettou, A.; Rabehi, A.; Kacha, A.H.; Amrani, M.
Source: Self-asserted source
Marwa BEN ARBIA via Scopus - Elsevier

Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications

Superlattices and Microstructures
2020 | Journal article
DOI: 10.1016/j.spmi.2019.106377
EID:

2-s2.0-85077057964
Contributors: Boubakeur, M.; Aissat, A.; Ben Arbia, M.; Maaref, H.; Vilcot, J.P.
Source: Self-asserted source
Marwa BEN ARBIA via Scopus - Elsevier

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Materials Science and Engineering: B
2020-12 | Journal article
DOI: 10.1016/j.mseb.2020.114769
Part of ISSN: 0921-5107
Source: Self-asserted source
Marwa BEN ARBIA
grade
Preferred source (of 2)‎

Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield

Journal of Electronic Materials
2020-09-03 | Journal article
DOI: 10.1007/s11664-020-08417-y
ISSN: 0361-5235
ISSN: 1543-186X
Source: Self-asserted source
Marwa BEN ARBIA
grade
Preferred source (of 3)‎

Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality

Superlattices and Microstructures
2020-06 | Journal article
DOI: 10.1016/j.spmi.2020.106539
ISSN: 0749-6036
Source: Self-asserted source
Marwa BEN ARBIA
grade
Preferred source (of 2)‎
How many people are using ORCID?