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Works (24)

Fabrication of QDNVM-based comparator

Micro and Nano Letters
2019 | Journal article
EID:

2-s2.0-85071688579

Contributors: Karmakar, S.; Gogna, M.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Optimization of wet clean and its cost effectiveness in dual Damascene 14 nm BEOL

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2018
2018 | Conference paper
EID:

2-s2.0-85048853416

Contributors: Sharma, A.; Bulaga, J.; Agrawal, S.; Srivastava, R.; Gogna, M.; Singh, S.; Scott, S.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Application of quantum dot gate nonvolatile memory (QDNVM) in image segmentation

Signal, Image and Video Processing
2016 | Journal article
EID:

2-s2.0-84958103129

Contributors: Karmakar, S.; Gogna, M.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Trench first metal hardmask post-lithography novel rework process for defectivity and yield improvement

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016
2016 | Conference paper
EID:

2-s2.0-84979581696

Contributors: Silvestre, M.C.; Gogna, M.; Mahalingam, A.S.K.M.; Ramanathan, E.; Ordonio, C.; Schaller, J.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators

Journal of Electronic Materials
2015 | Journal article
EID:

2-s2.0-84940437717

Contributors: Suarez, E.; Chan, P.-Y.; Gogna, M.; Ayers, J.E.; Heller, E.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Three-state quantum dot gate field-effect transistor in silicon-on-insulator

IET Circuits, Devices and Systems
2015 | Journal article
EID:

2-s2.0-84927591505

Contributors: Karmakar, S.; Gogna, M.; Suarez, E.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

ZNS/ZNMGSETE/ZNS II-VI energy barrier for INGAAS substrates

International Journal of High Speed Electronics and Systems
2014 | Journal article
EID:

2-s2.0-84901273083

Contributors: Suarez, E.; Chan, P.-Y.; Gogna, M.; Ayers, J.E.; Heller, E.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Fabrication and simulation of an indium gallium arsenide quantum-dot-gate field-effect transistor (QDG-FET) with ZnMgS as a tunnel gate insulator

Journal of Electronic Materials
2013 | Journal article
EID:

2-s2.0-84887148376

Contributors: Chan, P.-Y.; Gogna, M.; Suarez, E.; Al-Amoody, F.; Karmakar, S.; Miller, B.I.; Heller, E.K.; Ayers, J.E.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Fabrication and circuit modeling of NMOS inverter based on quantum dot gate field-effect transistors

Journal of Electronic Materials
2012 | Journal article
EID:

2-s2.0-84885649101

Contributors: Karmakar, S.; Chandy, J.A.; Gogna, M.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Improved device structure of quantum dot gate FET to obtain more stable intermediate state

Electronics Letters
2012 | Journal article
EID:

2-s2.0-84878394188

Contributors: Karmakar, S.; Gogna, M.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Indium gallium arsenide quantum dot gate field-effect transistor using II-VI tunnel insulators showing three-state behavior

Journal of Electronic Materials
2012 | Journal article
EID:

2-s2.0-84868586520

Contributors: Chan, P.-Y.; Suarez, E.; Gogna, M.; Miller, B.I.; Heller, E.K.; Ayers, J.E.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Quantum dot channel (QDC) field-effect transistors (FETs) using II-VI barrier layers

Journal of Electronic Materials
2012 | Journal article
EID:

2-s2.0-84868568358

Contributors: Jain, F.; Karmakar, S.; Chan, P.-Y.; Suarez, E.; Gogna, M.; Chandy, J.; Heller, E.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

ZnS-ZnMgS-ZnS lattice-matched gate insulator as an alternative for silicon dioxide on silicon in quantum dot gate FETs (QDGFETs)

Journal of Electronic Materials
2012 | Journal article
EID:

2-s2.0-84868542854

Contributors: Karmakar, S.; Suarez, E.; Gogna, M.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Nonvolatile memory effect in indium gallium arsenide-based metal-oxide-semiconductor devices using II-VI tunnel insulators

Journal of Electronic Materials
2011 | Journal article
EID:

2-s2.0-80051601294

Contributors: Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B.I.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Nonvolatile silicon memory using GeO <inf>x</inf> -cladded Ge quantum dots self-assembled on SiO <inf>2</inf> and lattice-matched II-VI tunnel insulator

Journal of Electronic Materials
2011 | Journal article
EID:

2-s2.0-80051579889

Contributors: Gogna, M.; Suarez, E.; Chan, P.-Y.; Al-Amoody, F.; Karmakar, S.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Spatial wavefunction-switched (SWS) InGaAs FETs with II-VI gate insulators

Journal of Electronic Materials
2011 | Journal article
EID:

2-s2.0-80051577353

Contributors: Jain, F.C.; Miller, B.; Suarez, E.; Chan, P.-Y.; Karmakar, S.; Al-Amoody, F.; Gogna, M.; Chandy, J.; Heller, E.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Three-state quantum dot gate FETs using ZnS-ZnMgS lattice-matched gate insulator on silicon

Journal of Electronic Materials
2011 | Journal article
EID:

2-s2.0-80051585648

Contributors: Karmakar, S.; Suarez, E.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Indium gallium arsenide based non-volatile memory devices with site-specific self-assembled germanium quantum dot gate

Materials Research Society Symposium Proceedings
2010 | Conference paper
EID:

2-s2.0-78650378975

Contributors: Chan, P.-Y.; Gogna, M.; Suarez, E.; Al-Amoody, F.; Karmakar, S.; Miller, B.I.; Ayers, J.E.; Jain, F.C.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Nonvolatile memories using quantum dot (QD) floating gates assembled on II-VI tunnel insulators

Journal of Electronic Materials
2010 | Journal article
EID:

2-s2.0-77954623532

Contributors: Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

3-State behavior in quantum dot gate FETs

2009 International Semiconductor Device Research Symposium, ISDRS '09
2009 | Conference paper
EID:

2-s2.0-77949386205

Contributors: Jain, F.; Karmakar, S.; Alamoody, F.; Suarez, E.; Gogna, M.; Chan, P.-Y.; Chandy, J.; Miller, B.; Heller, E.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Modeling and fabrication of cladded ge quantum dot gate si MOSFETs exhibiting 3-state behavior

Materials Research Society Symposium Proceedings
2009 | Conference paper
EID:

2-s2.0-70349276837

Contributors: Jam, F.C.; Gogna, M.; Alamoody, F.; Karmakar, S.; Suarez, E.; Chandy, J.; Heller, E.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Novel quantum dot gate FETs and nonvolatile memories using lattice-matched ii-vi gate insulators

Journal of Electronic Materials
2009 | Journal article
EID:

2-s2.0-68749096980

Contributors: Jain, F.C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B. et al.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Quantum dot (QD) gate Si-FETs with self-assembled GcO<inf>x</inf> cladded germanium quantum dots

Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
2009 | Conference paper
EID:

2-s2.0-70450203923

Contributors: Gogna, M.; Al-Amoody, F.; Karmakar, S.; Papadimitrakopoulos, F.; Jain, F.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier

Quantum dot gate InGaAs FETs

Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
2009 | Conference paper
EID:

2-s2.0-70450208951

Contributors: Jain, F.; Alamoody, F.; Suarez, E.; Gogna, M.; Chan, P.-Y.; Karmakar, S.; Fikiet, J.; Miller, B.; Heller, E.
Source: Self-asserted source
mukesh gogna via Scopus - Elsevier