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Scopus Author ID: 7004500045

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National University of Uzbekistan: Tashkent, UZ

заведующий кафедрой (Кафедра физики полупроводников и полимеров)
Employment
Source: Self-asserted source
Abdumanap Nasirov

Works (25)

Anisotropic magnetoresistance of GaMnAs:Be

Semiconductor Physics, Quantum Electronics and Optoelectronics
2024 | Journal article
DOI: 10.15407/spqeo27.03.302
EID:

2-s2.0-85210319651

Part of ISSN: 16056582 15608034
Contributors: Parchinskiy, P.B.; Gazizulina, A.S.; Nasirov, A.A.; Yuldashev, S.U.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

MECHANISM OF CURRENT PERFORMANCE IN THIN-FILM HETEROJUNCTIONS n-CdS/p-Sb<sub>2</sub>Se<sub>3</sub> OBTAINED BY THE CMBD METHOD

East European Journal of Physics
2024 | Journal article
DOI: 10.26565/2312-4334-2024-4-29
EID:

2-s2.0-85212259065

Part of ISSN: 23124539 23124334
Contributors: Razykov, T.M.; Kuchkarov, K.M.; Nasirov, A.A.; Pirimmatov, M.P.; Khurramov, R.R.; Yuldashev, R.T.; Isakov, D.Z.; Makhmudov, M.A.; Bobomuradov, S.M.; Shakhriyev, K.F.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Morphology and structural properties of Sb2(SxSe1-x)3 thin film absorbers for solar cells

Chalcogenide Letters
2024 | Journal article
DOI: 10.15251/CL.2024.2110.819
EID:

2-s2.0-85209921256

Part of ISSN: 15848663
Contributors: Tivanov, M.S.; Razykov, T.M.; Kuchkarov, K.M.; Olimov, A.N.; Khurramov, R.R.; Isakov, D.Z.; Makhmudov, Z.A.; Pirimmetov, M.; Nasirov, A.; Bayko, D.S. et al.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

arXiv
2024 | Other
DOI: 10.48550/arXiv.2402.15176
EID:

2-s2.0-85187361720

Part of ISSN: 23318422
Contributors: Khalilloev, M.M.; Jabbarova, B.O.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Anisotropic Magnetoresistance of Gamnas:Be

SSRN
2023 | Other
DOI: 10.2139/ssrn.4548055
EID:

2-s2.0-85168645666

Part of ISSN: 15565068
Contributors: Parchinskiy, P.B.; Gazizulina, A.S.; Nasirov, A.A.; Yuldashev, S.U.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Application of GIS technologies in the investigation of soil salinity

E3S Web of Conferences
2023 | Conference paper
DOI: 10.1051/e3sconf/202338601009
EID:

2-s2.0-85160757741

Part of ISSN: 22671242 25550403
Contributors: Abdullaev, I.; Nasirov, A.; Yakubov, G.; Abdullaeva, N.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

Russian Physics Journal
2023 | Journal article
DOI: 10.1007/s11182-023-02823-5
EID:

2-s2.0-85147780605

Part of ISSN: 15739228 10648887
Contributors: Parchinskiy, P.B.; Gazizulina, A.S.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy

2022 International Conference on Information Science and Communications Technologies, ICISCT 2022
2022 | Conference paper
DOI: 10.1109/ICISCT55600.2022.10146895
EID:

2-s2.0-85163762332

Part of ISBN: 9781665472296
Contributors: Gazizulina, A.S.; Nasirov, A.A.; Parchinskiy, P.B.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen

2022 International Conference on Information Science and Communications Technologies, ICISCT 2022
2022 | Conference paper
DOI: 10.1109/ICISCT55600.2022.10146781
EID:

2-s2.0-85163765954

Part of ISBN: 9781665472296
Contributors: Parchinskiy, P.B.; Nebesniy, A.A.; Nasirov, A.A.; Gazizulina, A.S.; Arslanov, A.O.; Nusretov, R.A.; Yuldashev, Sh.U.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Integrated information system for cadastre based on GIS and Web technologies

2022 International Conference on Information Science and Communications Technologies, ICISCT 2022
2022 | Conference paper
DOI: 10.1109/ICISCT55600.2022.10146844
EID:

2-s2.0-85163759225

Part of ISBN: 9781665472296
Contributors: Abdullaev, I.; Nasirov, A.; Pirimov, J.; Abdullaeva, N.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

Semiconductors
2021 | Journal article
DOI: 10.1134/S1063782621020123
EID:

2-s2.0-85101219685

Part of ISSN: 10906479 10637826
Contributors: Gazizulina, A.S.; Nasirov, A.A.; Nebesniy, A.A.; Parchinskiy, P.B.; Kim, D.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Effect of Substrate Temperature on the Physical Properties of Zn<sub>х</sub>Sn<sub>1 – х</sub>Se Films for Thin-Film Solar Cells

Applied Solar Energy (English translation of Geliotekhnika)
2019 | Journal article
DOI: 10.3103/S0003701X19050104
EID:

2-s2.0-85082392421

Part of ISSN: 19349424 0003701X
Contributors: Razykov, T.M.; Kuchkarov, K.M.; Ergashev, B.A.; Baiev, M.; Mahmudov, M.; Yuldoshov, R.T.; Nasirov, A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Statistical properties of a periodically modulated radiation in a multimode fibers

International Conference on Information Science and Communications Technologies: Applications, Trends and Opportunities, ICISCT 2019
2019 | Conference paper
DOI: 10.1109/ICISCT47635.2019.9012062
EID:

2-s2.0-85082388788

Part of ISBN: 9781728125640
Contributors: Akhmadzhanov, T.; Nasirov, A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

Technical Physics Letters
2019 | Journal article
DOI: 10.1134/S1063785019120216
EID:

2-s2.0-85077556182

Part of ISSN: 10906533 10637850
Contributors: Khalilloev, M.M.; Jabbarova, B.O.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

Surface Engineering and Applied Electrochemistry
2012 | Journal article
DOI: 10.3103/S1068375512020111
EID:

2-s2.0-84861508295

Part of ISSN: 10683755 19348002
Contributors: Parchinskii, P.B.; Ligai, L.G.; Nasirov, A.A.; Allambergenov, M.M.; Ismailov, K.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

Technical Physics Letters
2011 | Journal article
DOI: 10.1134/S106378501108013X
EID:

2-s2.0-80052052521

Part of ISSN: 10637850
Contributors: Parchinskiy, P.B.; Nasirov, A.A.; Ligai, L.G.; Allambergenov, M.M.; Ismailov, K.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

Surface Engineering and Applied Electrochemistry
2008 | Journal article
DOI: 10.3103/S1068375508030162
EID:

2-s2.0-50149087326

Part of ISSN: 10683755 19348002
Contributors: Vlasov, S.I.; Nasirov, A.A.; Mamatkarimov, O.O.; Ergasheva, M.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Surface state density at the semiconductor-glass interface

Surface Engineering and Applied Electrochemistry
2008 | Journal article
DOI: 10.3103/S1068375508040169
EID:

2-s2.0-51749090885

Part of ISSN: 10683755 19348002
Contributors: Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

Semiconductors
2004 | Journal article
DOI: 10.1134/1.1823064
EID:

2-s2.0-10044248562

Part of ISSN: 10637826
Contributors: Parchinskiǐ, P.B.; Vlasov, S.I.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

Technical Physics Letters
2001 | Journal article
DOI: 10.1134/1.1407360
EID:

2-s2.0-0035538165

Part of ISSN: 10637850
Contributors: Parchinskii, P.B.; Vlasov, S.I.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

Technical Physics
1999 | Journal article
DOI: 10.1134/1.1259424
EID:

2-s2.0-0033240572

Part of ISSN: 10637842
Contributors: Vlasov, S.I.; Parchinskiǐ, P.B.; Nasirov, A.A.; Olmatov, B.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Influence of the impurity S on heat-stability of MIS-structures on the basis of silicon

Turkish Journal of Physics
1996 | Journal article
DOI: 10.55730/1300-0101.2632
EID:

2-s2.0-0030361555

Part of ISSN: 13000101
Contributors: Vlasov, S.I.; Nasirov, A.A.; Parchinskiy, P.B.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Investigation of the charge of the insulator and a silicon-lead silicate glass interface

Technical Physics Letters
1996 | Journal article
EID:

2-s2.0-0030547357

Part of ISSN: 10637850
Contributors: Parchinskiǐ, P.B.; Vlasov, S.I.; Nasirov, A.A.; Adilov, T.P.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

Properties of Lead Borosilicate Glasses

Inorganic Materials
1996 | Journal article
EID:

2-s2.0-2742556339

Part of ISSN: 00201685
Contributors: Parchinskii, P.B.; Vlasov, S.I.; Nasirov, A.A.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier

A - centers influence of the surface state density

Mikroelektronika
1992 | Journal article
EID:

2-s2.0-0026698367

Part of ISSN: 05441269
Contributors: Vlasov, S.I.; Nasirov, A.A.; Pak, T.H.; Alimov, T.Sh.
Source: Self-asserted source
Abdumanap Nasirov via Scopus - Elsevier
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