Personal information

Websites & social links

Researching Group

Other IDs

ResearcherID: N-5877-2014
Scopus Author ID: 57209010416

Countries

Spain

Activities

Collapse all

Employment (4)

Instituto de Microelectrónica de Barcelona: Cerdanyola del Valles, Catalunya, ES

2017-07-01 to present | Investigador PostDoc
Employment
Source: Self-asserted source
Marcos Maestro Izquierdo

Universidad Autónoma de Barcelona: Barcelona, ES

2017-02-12 to 2017-05-31 | Investigador (Departamento Ingeniería Electrónica)
Employment
Source: Self-asserted source
Marcos Maestro Izquierdo

Universitat Autònoma de Barcelona: Bellaterra, Catalunya, ES

2013-02-11 to 2017-02-11 | Ph.D. Student (Electronic Engineering )
Employment
Source: Self-asserted source
Marcos Maestro Izquierdo

Valencia Nanophotonics Technoloy Center: Valencia, Comunitat Valenciana, ES

2010-06-20 to 2011-09-15 | Junior Resarcher (Optical Networks and Systems)
Employment
Source: Self-asserted source
Marcos Maestro Izquierdo

Education and qualifications (3)

Universidad Autónoma de Barcelona: Barcelona, ES

2013-10 to 2017-06 | Doctorado (Departamento de Ingeniería Electrónica)
Education
Source: Self-asserted source
Marcos Maestro Izquierdo

Universitat Autònoma de Barcelona: Bellaterra, Catalunya, ES

2013-09-19 to 2014-09-11 | Master on Micro and Nanoelectronics (Engineering department)
Education
Source: Self-asserted source
Marcos Maestro Izquierdo

Universidad de Valladolid: Valladolid, Castilla y León, ES

2011-09-24 to 2012-07-18 | Master Degree in Physics Instrumentation
Education
Source: Self-asserted source
Marcos Maestro Izquierdo

Works (13)

Current transient response and role of the internal resistance in HfOx-based memristors

Applied Physics Letters
2020-12-28 | Journal article
DOI: 10.1063/5.0031575
Contributors: M. B. Gonzalez; M. Maestro-Izquierdo; F. Jiménez-Molinos; J. B. Roldán; F. Campabadal
Source: check_circle
Crossref

Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation

Nanotechnology
2020-03-27 | Journal article
DOI: 10.1088/1361-6528/ab5f9a
Contributors: M Maestro-Izquierdo; M B Gonzalez; F Jimenez-Molinos; E Moreno; J B Roldan; F Campabadal
Source: check_circle
Crossref

Experimental Verification of Memristor-Based Material Implication NAND Operation

IEEE Transactions on Emerging Topics in Computing
2019-10-01 | Journal article
DOI: 10.1109/TETC.2017.2760929
Contributors: Marcos Maestro-Izquierdo; Javier Martin-Martinez; Albert Crespo Yepes; Manel Escudero; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich; Antonio Rubio
Source: check_circle
Crossref

Experimental time evolution study of the HfO2 based IMPLY gate operation

2018 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Experimental verification of memristor-based material NAND operation

2018 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Resistive switching device technology based on silicon oxide for improved on-off ratio – Part I: Memory devices

2018 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Resistive switching device technology based on silicon oxide for improved on-off ratio – Part II: Select devices

2018 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation

IEEE Transactions on Electron Devices
2018-02 | Journal article
DOI: 10.1109/TED.2017.2778315
Contributors: Marcos Maestro-Izquierdo; Javier Martin-Martinez; Albert Crespo Yepes; Manel Escudero; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich; Antonio Rubio
Source: check_circle
Crossref

A new high resolution random telegraph noise (RTN) characterization method for resistive RAM

2016 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Current-limiting and ultrafast system for the characterization of resistive random access memories

2016 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM

2016 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Microelectronics Engineering
2015 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo

Non-homogeneuos conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

Microelectronic Engineering
2015 | Journal article
Source: Self-asserted source
Marcos Maestro Izquierdo
How many people are using ORCID?