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Employment (1)

École des Mines de Saint-Étienne: Gardanne, Rhône-Alpes, FR

2019-12-02 to present (Systèmes et Architectures Sécurisés (SAS))
Employment
Source: Self-asserted source
William Souza da Cruz

Education and qualifications (3)

École des Mines de Saint-Étienne: Gardanne, Rhône-Alpes, FR

2019-12-02 to present | Doctorat en Microélectronique (CMP - Centre Microélectronique de Provence)
Education
Source: Self-asserted source
William Souza da Cruz

Centro Universitário da FEI: Sao Bernardo do Campo, São Paulo, BR

2017-03-01 to 2019-02-28 | Master in Electrical Engineering
Education
Source: Self-asserted source
William Souza da Cruz

Centro Universitário da FEI: Sao Bernardo do Campo, São Paulo, BR

2012-02-01 to 2016-12-31 | Automation and Control Engineer
Education
Source: Self-asserted source
William Souza da Cruz

Funding (1)

Estudo experimental da influência das radiações ionizantes de raios-X em MOSFETs com estilo de leiaute de porta octogonal com tecnologia de fabricação de CIs CMOS de silício-germânio de 130 nm

2017-10 to 2019-02 | Grant
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (Brasília, BR)
GRANT_NUMBER:

88882.146171/2017-01
Source: Self-asserted source
William Souza da Cruz

Works (7)

An Experimentally Tuned Compact Electrical Model for Laser Fault Injection Simulation

2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS)
2022-09-12 | Conference paper
DOI: 10.1109/iolts56730.2022.9897189
Contributors: William Souza Da Cruz; Raphael Viera; Jean-Baptiste Rigaud; Guillaume Hubert; Jean-Max Dutertre
Source: Self-asserted source
William Souza da Cruz

Further Analysis of Laser-induced IR-drop

2021 IEEE 30th Asian Test Symposium (ATS)
2021-11-22 | Conference paper
DOI: 10.1109/ats52891.2021.00028
Contributors: William Souza da Cruz; Raphael Viera; Jean-Max Dutertre; Jean-Baptiste Rigaud; Guillaume Hubert
Source: Self-asserted source
William Souza da Cruz

Evidence of a Dynamic Fault Model in the DICE Radiation-Hardened Cell

Proceedings - 33rd Symposium on Integrated Circuits and Systems Design, SBCCI 2020
2020 | Conference paper
DOI: 10.1109/SBCCI50935.2020.9189897
EID:

2-s2.0-85093833505
Contributors: Da Cruz, W.S.; Dutertre, J.-M.; Rigaud, J.-B.; Hubert, G.
Source: Self-asserted source
William Souza da Cruz via Scopus - Elsevier
grade
Preferred source (of 2)‎

Using the hexagonal layout style for mosfets to boost the device matching in ionizing radiation environments

Journal of Integrated Circuits and Systems
2020 | Journal article
DOI: 10.29292/jics.v15i2.185
EID:

2-s2.0-85089906544

Part of ISSN: 18720234 18071953
Contributors: Peruzzi, V.V.; Cruz, W.S.; Silva, G.A.; Simoen, E.; Claeys, C.; Gimenez, S.P.
Source: Self-asserted source
William Souza da Cruz via Scopus - Elsevier
grade
Preferred source (of 2)‎

Using the octagonal layout style for MOSFETs to boost the device matching in ionizing radiation environments

IEEE Transactions on Device and Materials Reliability
2020 | Journal article
DOI: 10.1109/TDMR.2020.3033517
EID:

2-s2.0-85097741846

Part of ISSN: 15582574 15304388
Contributors: Peruzzi, V.V.; Cruz, W.S.; Da Silva, G.A.; Simoen, E.; Claeys, C.; Gimenez, S.P.
Source: Self-asserted source
William Souza da Cruz via Scopus - Elsevier
grade
Preferred source (of 2)‎

Boosting the ionizing radiation tolerance in the mosfets matching by using diamond layout style

SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
2019 | Conference paper
DOI: 10.1109/SBMicro.2019.8919344
EID:

2-s2.0-85077221162
Contributors: Peruzzi, V.V.; Cruz, W.S.D.; Silva, G.A.D.; Teixeira, R.C.; Junior, L.E.S.; Gimenez, S.P.
Source: Self-asserted source
William Souza da Cruz via Scopus - Elsevier
grade
Preferred source (of 2)‎

Using ellipsoidal layout style to boost the electrical performance of the MOSFETs regarding the 180 nm CMOS ICs manufacturing process

ECS Transactions
2018 | Conference paper
DOI: 10.1149/08508.0097ecst
EID:

2-s2.0-85050138058

Part of ISSN: 19385862 19386737
Contributors: Cruz, W.S.; Swart, J.; Gimenez, S.P.
Source: Self-asserted source
William Souza da Cruz via Scopus - Elsevier
grade
Preferred source (of 2)‎
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