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Employment (2)

Yildiz Teknik Üniversitesi: İstanbul, TR

2011 to present | Res. Assist. ( Physics)
Employment
Source: Self-asserted source
Neslihan Ayarcı Kuruoğlu

Yildiz Teknik Üniversitesi: İstanbul, TR

2011 to present | Res. Assist. ( Physics)
Employment
Source: Self-asserted source
Neslihan Ayarcı Kuruoğlu

Education and qualifications (2)

Yıldız Technical University: İstanbul, TR

2012-02-14 to present (Physics)
Education
Source: Self-asserted source
Neslihan Ayarcı Kuruoğlu

Ege Üniversitesi Fen Fakültesi: Izmir, Izmir, TR

2009-09 to 2012-01 (Physics)
Education
Source: Self-asserted source
Neslihan Ayarcı Kuruoğlu

Works (9)

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Journal of Luminescence
2023-05 | Journal article
DOI: 10.1016/j.jlumin.2023.119749
Contributors: Orhan Özdemir; Hanife Baş; Neslihan Ayarcı Kuruoğlu; Kutsal Bozkurt; Mustafa Aydın; Fahrettin Sarcan; Ayşe Erol; Bandar Alshehri; Karim Dogheche; Elhadj Dogheche
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Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

Journal of Luminescence
2023-03 | Journal article
DOI: 10.1016/j.jlumin.2022.119543
Contributors: Orhan Özdemir; Kutsal Bozkurt; Neslihan Ayarcı Kuruoğlu; Hanife Baş; Fahrettin Sarcan; Ayşe Erol; Bandar Alshehri; Karim Dogheche; Elhadj Dogheche
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Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

Journal of Materials Science: Materials in Electronics
2022-08 | Journal article
DOI: 10.1007/s10854-022-08752-2
Contributors: Neslihan Ayarcı Kuruoğlu; Orhan Özdemir; Kutsal Bozkurt; Hanife Baş; Bandar Alshehri; Karim Dogheche; Elhadj Dogheche
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MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
2022-03-01 | Journal article
DOI: 10.21597/jist.962671
Contributors: Neslihan AYARCI KURUOĞLU
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Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure

Journal of Physics D: Applied Physics
2019-08-21 | Journal article
DOI: 10.1088/1361-6463/ab1f9b
Contributors: Orhan Özdemir; Kutsal Bozkurt; Neslihan Ayarcı Kuruoğlu; Hanife Baş; Bandar Alshehri; Karim Dogheche; Quentin Gaimard; Abderrahim Ramdane; Elhadj Dogheche
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Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices

Journal of Physics D: Applied Physics
2019-03-06 | Journal article
DOI: 10.1088/1361-6463/aaf941
Contributors: Kutsal Bozkurt; Orhan Özdemir; Neslihan Ayarcı Kuruoğlu; Bandar Alshehri; Karim Dogheche; Quentin Gaimard; Abderrahim Ramdane; Elhadj Dogheche
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Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement

Journal of Physics D: Applied Physics
2017-12-20 | Journal article
DOI: 10.1088/1361-6463/aa98b2
Contributors: Neslihan Ayarcı Kuruoğlu; Orhan Özdemir; Kutsal Bozkurt; Suresh Sundaram; Jean-Paul Salvestrini; Abdallah Ougazzaden; Quentin Gaimard; Sofiane Belahsene; Kamel Merghem; Abderrahim Ramdane
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Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source

Thin Solid Films
2017-08 | Journal article
DOI: 10.1016/j.tsf.2017.07.033
Contributors: Neslihan Ayarcı Kuruoğlu; Orhan Özdemir; Kutsal Bozkurt
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Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

IEEE Transactions on Electron Devices
2017-07 | Journal article
DOI: 10.1109/TED.2017.2705719
Contributors: Neslihan Ayarci Kuruoglu; Orhan Ozdemir; Kutsal Bozkurt; Sofiane Belahsene; Anthony Martinez; Abderrahim Ramdane
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