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In-situ, MOVPE, AIIIN, semiconductor characterisation, optical spectroscopy, electronics design
Poland

Activities

Employment (2)

Wrocław University of Science and Technology: Wroclaw, Dolnoslaskie, PL

2023-07-01 to present | Assistant Professor (Electronics, Photonics and Microsystems)
Employment
Source: Self-asserted source
Piotr Pokryszka

Wrocław University of Science and Technology: Wroclaw, Dolnoslaskie, PL

2017-07-01 to 2023-06-30 | Research Assistant (Electronics, Photonics and Microsystems)
Employment
Source: Self-asserted source
Piotr Pokryszka

Education and qualifications (3)

Wrocław University of Science and Technology: Wrocław, Dolnoslaskie, PL

2016-02-01 to 2023-04-01 | PhD Eng. (Electronics, Photonics and Microsystems)
Education
Source: Self-asserted source
Piotr Pokryszka

Wrocław University of Science and Technology: WROCLAW, Dolnoslaskie, PL

2016-03-01 to 2017-07-01 | MSc Eng. (Electronics, Photonics and Microsystems)
Education
Source: Self-asserted source
Piotr Pokryszka

Wrocław University of Science and Technology: Wrocław, PL

2012-09-01 to 2016-01-28 | Eng. (Faculty of Microsystem Electronics and Photonics)
Education
Source: Self-asserted source
Piotr Pokryszka

Works (11)

Influence of Flexible and Textile Substrates on Frequency-Selective Surfaces (FSS)

Sensors
2024-03-06 | Journal article
Contributors: Olga Rac-Rumijowska; Piotr Pokryszka; Tomasz Rybicki; Patrycja Suchorska-Woźniak; Maksymilian Woźniak; Katarzyna Kaczkowska; Iwona Karbownik
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Crossref
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Dual-band light-induced thermoelastic spectroscopy utilizing an antiresonant hollow-core fiber-based gas absorption cell

Applied Physics B: Lasers and Optics
2023 | Journal article
EID:

2-s2.0-85174864385

Part of ISSN: 09462171
Contributors: Bojęś, P.; Jaworski, P.; Pokryszka, P.; Belardi, W.; Spagnolo, V.; Krzempek, K.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

Dual-Band Light Induced Thermo-Elastic Spectroscopy Utilizing an Antiresonant Hollow-Core Fiber-Based Gas Absorption Cell

SSRN
2022 | Other
EID:

2-s2.0-85179569790

Part of ISSN: 15565068
Contributors: Bojęś, P.; Jaworski, P.; Pokryszka, P.; Belardi, W.; Spagnolo, V.; Krzempek, K.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

Quartz-Enhanced Photothermal Spectroscopy-Based Methane Detection in an Anti-Resonant Hollow-Core Fiber

Sensors
2022-07-23 | Journal article
Contributors: Piotr Bojęś; Piotr Pokryszka; Piotr Jaworski; Fei Yu; Dakun Wu; Karol Krzempek
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Crossref
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High performance optical shutter design with scalable aperture

BULLETIN OF THE POLISH ACADEMY OF SCIENCES
2021-11-19 | Journal article
Source: Self-asserted source
Piotr Pokryszka

High performance optical shutter design with scalable aperture

Bulletin of the Polish Academy of Sciences Technical Sciences
2021-08-13 | Journal article
Contributors: Piotr Pokryszka; Mateusz Wośko; Wojciech Kijaszek; Regina Paszkiewicz
Source: check_circle
Crossref

Electrochemical thickening with gold of thin metallic layers,Pogrubiania elektrochemiczne złotem cienkich warstw metalicznych

Przeglad Elektrotechniczny
2019 | Journal article
EID:

2-s2.0-85075380410

Part of ISSN: 24499544 00332097
Contributors: Macherzyński, W.; Buba, P.; Pokryszka, P.; Ilgiewicz, G.; Paszkiewicz, R.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

Journal of Materials Science: Materials in Electronics
2019 | Journal article
EID:

2-s2.0-85060354481

Part of ISSN: 1573482X 09574522
Contributors: Wośko, M.; Szymański, T.; Paszkiewicz, B.; Pokryszka, P.; Paszkiewicz, R.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

The method of temperature calibration of the epitaxy process in the AIXTRON CCS 3x2'' system,Pomiary in-situ jednorodności temperatury i ex-situ grubości osadzonej warstwy w systemie epitaksjalnym AIXTRON CCS 3 x 2’’

Przeglad Elektrotechniczny
2019 | Journal article
EID:

2-s2.0-85075377334

Part of ISSN: 24499544 00332097
Contributors: Pokryszka, P.; Wośko, M.; Paszkiewicz, R.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

Light influence on the sheet resistance of AlGaN/GaN heterostructure,Wpływ światła na rezystancję powierzchniową heterostruktury AlGaN/GaN

Przeglad Elektrotechniczny
2018 | Journal article
EID:

2-s2.0-85053085266

Part of ISSN: 24499544 00332097
Contributors: Pokryszka, P.; Paszkiewicz, B.
Source: Self-asserted source
Piotr Pokryszka via Scopus - Elsevier

Light Influence on the Sheet Resistance of AlGaN/GaN Heterostructures Grown by MOVPE Technique

Crystal Research and Technology
2018-11 | Journal article
Contributors: Piotr Pokryszka; Tomasz Szymanski; Bogdan Paszkiewicz
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