Personal information

Keywords

Ga2O3, power device, semiconductor physics

Activities

Collapse all

Employment (2)

University of Science and Technology of China: Hefei, Anhui, CN

2019-11-01 to present (school of microelectronics)
Employment
Source: Self-asserted source
Guangwei Xu

University of California, Los Angeles: Los Angeles, California, US

2017-09-05 to 2019-09-30 | postdoc. (MSE)
Employment
Source: Self-asserted source
Guangwei Xu

Education and qualifications (2)

Institute of Microelectronics pf Chinese Academy of Sciences: Beijing, CN

2012-09-01 to 2017-07-01 | graduate
Education
Source: Self-asserted source
Guangwei Xu

Lanzhou University: Lanzhou, Gansu, CN

2008-09-01 to 2012-07-01 | undergraduate
Education
Source: Self-asserted source
Guangwei Xu

Works (42)

kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation

IEEE Electron Device Letters
2025-03 | Journal article
DOI: 10.1109/LED.2024.3523681
Contributors: Xuan Xie; Shunjie Yu; Xi Tang; Rui Chen; Guangwei Xu; Shibing Long; Shu Yang
Source: check_circle
Crossref

Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension

Applied Physics Letters
2025-03-01 | Journal article
DOI: 10.1063/5.0248466
Contributors: Qiuyan Li; Jinyang Liu; Weibing Hao; Xinrui Xu; Zhao Han; Song He; Xiaodong Xu; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]

Journal of Applied Physics
2025-02-28 | Journal article
DOI: 10.1063/5.0264567
Contributors: H. J. von Bardeleben; Xuanze Zhou; Jingbo Zhou; Guangwei Xu; Shibing Long; U. Gerstmann
Source: check_circle
Crossref

High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes

Journal of Applied Physics
2025-02-01 | Journal article
DOI: 10.1063/5.0249111
Contributors: H. J. von Bardeleben; Xuanze Zhou; Jingbo Zhou; Guangwei Xu; Shibing Long; U. Gerstmann
Source: check_circle
Crossref

The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes

Applied Physics Letters
2025-01-06 | Journal article
DOI: 10.1063/5.0244107
Contributors: Jinyang Liu; Song He; Guangwei Xu; Weibing Hao; Xuanze Zhou; Zheyang Zheng; Shibing Long
Source: check_circle
Crossref

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2024.3455338
Contributors: Xinyi Tang; Yuanbiao Li; Songming Miao; Xiao Chen; Guangwei Xu; Di Lu; Shibing Long
Source: check_circle
Crossref

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

IEEE Journal of the Electron Devices Society
2024 | Journal article
DOI: 10.1109/JEDS.2024.3432783
Contributors: Shaocheng Li; Shu Yang; Zhao Han; Weibing Hao; Kuang Sheng; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

A Physics-Based Compact Electrothermal Model of β -Ga2O3 MOSFETs for Device-Circuit Co-Design

IEEE Transactions on Components, Packaging and Manufacturing Technology
2024-12 | Journal article
DOI: 10.1109/TCPMT.2024.3439337
Contributors: Kai Zhou; Xuanze Zhou; Song He; Guangwei Xu; Lingfei Wang; Yibo Wang; Genquan Han; Shibing Long
Source: check_circle
Crossref

Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation

IEEE Journal of Emerging and Selected Topics in Power Electronics
2024-12 | Journal article
DOI: 10.1109/JESTPE.2024.3446574
Contributors: Jiahong Du; Shu Yang; Xuan Xie; Zaitian Han; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

Ga vacancies as dominant intrinsic acceptors in Sn-doped β−Ga2O3 revealed by positron annihilation spectroscopy

Physical Review B
2024-11-07 | Journal article
DOI: 10.1103/PhysRevB.110.174106
Contributors: Y. H. Li; Y. Dong; G. W. Xu; Y. Z. Bu; Q. L. Sai; H. J. Qi; S. B. Long; Z. Q. Chen; B. J. Ye; H. J. Zhang
Source: check_circle
Crossref

Reliability of 1.5 × 1.5 mm2β‐Ga2O3 Power Diodes and Application in DC–DC Converter

physica status solidi (b)
2024-11-07 | Journal article
DOI: 10.1002/pssb.202400438
Contributors: Feihong Wu; Junpeng Wen; Jinyang Liu; Qiuyan Li; Zhao Han; Weibing Hao; Xuanze Zhou; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation

Applied Physics Letters
2024-10-14 | Journal article
DOI: 10.1063/5.0237616
Contributors: Song He; Junpeng Wen; Jinyang Liu; Weibing Hao; Xuanze Zhou; Tianqi Wang; Zhengliang Zhang; Jianli Liu; Guangwei Xu; Shu Yang et al.
Source: check_circle
Crossref

Improved Dielectric Constant and Leakage Current of ZrO₂-Based Metal–Insulator–Metal Capacitors by Si Doping

IEEE Transactions on Electron Devices
2024-08 | Journal article
DOI: 10.1109/TED.2024.3405396
Contributors: Yuanbiao Li; Xinyi Tang; Songming Miao; Jinlan Peng; Guangwei Xu; Xianqin Hu; Weiping Bai; Zhongming Liu; Di Lu; Shibing Long
Source: check_circle
Crossref

Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-Doped Oxide Layers

IEEE Electron Device Letters
2024-06 | Journal article
DOI: 10.1109/LED.2024.3392331
Contributors: Xinyi Tang; Yuanbiao Li; Songming Miao; Guangwei Xu; Jifang Chen; Yaozong Zhang; Weiping Bai; Zhongming Liu; Kanyu Cao; Di Lu et al.
Source: check_circle
Crossref

Stable Ga2O3 soft x-ray detector with ultrahigh responsivity

Applied Physics Letters
2024-04-29 | Journal article
DOI: 10.1063/5.0204816
Contributors: Shunjie Yu; Yan Liu; Xiaohu Hou; Mengfan Ding; Yanni Zou; Yong Guan; Zhao Wu; Xiaolong Zhao; Qin Hu; Guangwei Xu et al.
Source: check_circle
Crossref

Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging Technology

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2024.3359158
Contributors: Zhuolin Jiang; Hongru Deng; Xuanze Zhou; Xiangnan Li; Yuxi Wei; Jie Wei; Qi Liu; Weibing Hao; Guangwei Xu; Shibing Long et al.
Source: check_circle
Crossref

Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2024.3360016
Contributors: Junpeng Wen; Weibing Hao; Zhao Han; Feihong Wu; Qiuyan Li; Jinyang Liu; Qi Liu; Xuanze Zhou; Guangwei Xu; Shu Yang et al.
Source: check_circle
Crossref

Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and Opportunities

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2023.3328806
Contributors: Jingbo Zhou; Xuanze Zhou; Qi Liu; Man Hoi Wong; Guangwei Xu; Shu Yang; Shibing Long
Source: check_circle
Crossref

Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

Journal of Applied Physics
2024-03-21 | Journal article
DOI: 10.1063/5.0195890
Contributors: Haoxin Li; Zhao Han; Xuanze Zhou; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-Film Transistors

IEEE Transactions on Electron Devices
2023-12 | Journal article
DOI: 10.1109/TED.2023.3326798
Contributors: Song He; Haoxin Li; Guangwei Xu; Xinyi Tang; Yuanbiao Li; Jaewoo Kim; Tina Gu; Xingkun Xue; Zelun Li; Handong Xu et al.
Source: check_circle
Crossref

Fast Speed Ga2O3 Solar-Blind Photodetectors With Low Temperature Process Engineering

IEEE Electron Device Letters
2023-11 | Journal article
DOI: 10.1109/LED.2023.3317392
Contributors: Xiaolan Ma; Xiaohu Hou; Pengju Tan; Mengfan Ding; Xiaolong Zhao; Yuqian Yang; Guangwei Xu; Qin Hu; Shibing Long
Source: check_circle
Crossref

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Applied Physics Letters
2023-09-11 | Journal article
DOI: 10.1063/5.0161934
Contributors: Jinyang Liu; Zhao Han; Lei Ren; Xiao Yang; Guangwei Xu; Weibing Hao; Xiaolong Zhao; Shu Yang; Di Lu; Yuncheng Han et al.
Source: check_circle
Crossref

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Journal of Vacuum Science & Technology A
2023-09-01 | Journal article
DOI: 10.1116/6.0002650
Contributors: Zhao Han; Guangwei Xu; Xueqiang Xiang; Weibing Hao; Yuanbiao Li; Xuanze Zhou; Xiaobing Yan; Shibing Long
Source: check_circle
Crossref

Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier

IEEE Transactions on Electron Devices
2023-07 | Journal article
DOI: 10.1109/TED.2023.3279810
Contributors: Qi Liu; Xuanze Zhou; Qiming He; Weibing Hao; Xiaolong Zhao; Mengyuan Hua; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

IEEE Transactions on Electron Devices
2023-04 | Journal article
DOI: 10.1109/TED.2023.3241885
Contributors: Weibing Hao; Feihong Wu; Wenshen Li; Guangwei Xu; Xuan Xie; Kai Zhou; Wei Guo; Xuanze Zhou; Qiming He; Xiaolong Zhao et al.
Source: check_circle
Crossref

702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation

IEEE Electron Device Letters
2023-03 | Journal article
DOI: 10.1109/LED.2023.3235777
Contributors: Yongjian Ma; Xuanze Zhou; Wenbo Tang; Xiaodong Zhang; Guangwei Xu; Li Zhang; Tiwei Chen; Shige Dai; Chunxu Bian; Botong Li et al.
Source: check_circle
Crossref

Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

IEEE Transactions on Electron Devices
2023-03 | Journal article
DOI: 10.1109/TED.2023.3239062
Contributors: Feihong Wu; Yuangang Wang; Guangzhong Jian; Guangwei Xu; Xuanze Zhou; Wei Guo; Jiahong Du; Qi Liu; Shaobo Dun; Zhaoan Yu et al.
Source: check_circle
Crossref

Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

IEEE Electron Device Letters
2023-02 | Journal article
DOI: 10.1109/LED.2022.3227583
Contributors: Mengfan Ding; Weibing Hao; Shunjie Yu; Yan Liu; Yanni Zou; Guangwei Xu; Xiaolong Zhao; Xiaohu Hou; Shibing Long
Source: check_circle
Crossref

The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO2/TiN Capacitors

IEEE Transactions on Electron Devices
2023-01 | Journal article
DOI: 10.1109/TED.2022.3223327
Contributors: Yuanbiao Li; Xinyi Tang; Guangwei Xu; Haoxin Li; Song He; Xianqin Hu; Xingsong Su; Weiping Bai; Di Lu; Shibing Long
Source: check_circle
Crossref

A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

AIP Advances
2023-01-01 | Journal article
DOI: 10.1063/5.0134215
Contributors: Kai Zhou; Songming Miao; Xuanze Zhou; Guangwei Xu; Lingfei Wang; Shibing Long
Source: check_circle
Crossref

Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates

IEEE Electron Device Letters
2022-12 | Journal article
DOI: 10.1109/LED.2022.3219073
Contributors: Jinyang Liu; Zhengyuan Li; Weibing Hao; Wenxiang Mu; Qiming He; Xuanze Zhou; Xiaolong Zhao; Guangwei Xu; Zhitai Jia; Xutang Tao et al.
Source: check_circle
Crossref

Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications

IEEE Electron Device Letters
2022-11 | Journal article
DOI: 10.1109/LED.2022.3205326
Contributors: Qiming He; Xuanze Zhou; Qiuyan Li; Weibing Hao; Qi Liu; Zhao Han; Kai Zhou; Chen Chen; Jinlan Peng; Guangwei Xu et al.
Source: check_circle
Crossref

Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

Applied Physics Letters
2022-11-28 | Journal article
DOI: 10.1063/5.0130292
Contributors: Xuanze Zhou; Yongjian Ma; Guangwei Xu; Qi Liu; Jinyang Liu; Qiming He; Xiaolong Zhao; Shibing Long
Source: check_circle
Crossref

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

IEEE Transactions on Electron Devices
2022-07 | Journal article
DOI: 10.1109/TED.2022.3175793
Contributors: Haoxin Li; Le Cai; Guangwei Xu; Shibing Long
Source: check_circle
Crossref

Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes without Edge Termination

IEEE Electron Device Letters
2021 | Journal article
DOI: 10.1109/led.2021.3133866
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Guangwei Xu

A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications

Science China Information Sciences
2021-11 | Journal article
DOI: 10.1007/s11432-021-3224-2
Part of ISSN: 1674-733X
Part of ISSN: 1869-1919
Source: Self-asserted source
Guangwei Xu

Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study

IEEE Transactions on Electron Devices
2021-04 | Journal article
DOI: 10.1109/ted.2021.3056326
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Guangwei Xu

Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

IEEE Electron Device Letters
2021-03 | Journal article
DOI: 10.1109/led.2021.3055349
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Guangwei Xu

Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Applied Physics Letters
2021-01-25 | Journal article
DOI: 10.1063/5.0038349
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Guangwei Xu

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Advanced Functional Materials
2020-08 | Journal article
DOI: 10.1002/adfm.202003285
Part of ISSN: 1616-301X
Part of ISSN: 1616-3028
Source: Self-asserted source
Guangwei Xu

Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs

IEEE Transactions on Electron Devices
2019-12 | Journal article
DOI: 10.1109/ted.2019.2947508
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Guangwei Xu

Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current

Advanced Electronic Materials
2018-05 | Journal article
DOI: 10.1002/aelm.201700493
Part of ISSN: 2199-160X
Source: Self-asserted source
Guangwei Xu

Peer review (24 reviews for 6 publications/grants)

Review activity for Applied physics letters. (10)
Review activity for Inorganic chemistry communications. (2)
Review activity for Journal of alloys and compounds. (1)
Review activity for Journal of applied physics. (7)
Review activity for Journal of vacuum science & technology. (3)
Review activity for Physica status solidi. (1)
How many people are using ORCID?