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Employment (2)

Panasonic (Japan): Moriguchi, Ôsaka, JP

2003-05-06 to present
Employment
Source: Self-asserted source
Yoshihiro Sato

NEC Corporation (Japan): Sagamihara, Kanagawa, JP

1999-04-01 to 2003-04-30
Employment
Source: Self-asserted source
Yoshihiro Sato

Works (8)

Impact of n+/p+-doped Polysilicon Gate in Lateral Overflow Transistor on Organic Photoconductive Film CMOS Image Sensor Dark Currents

2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
2023-11-16 | Conference abstract
DOI: 10.1109/imfedk60983.2023.10366332
Contributors: Yoshihiro Sato; Tsutomu Kobayashi; Takayoshi Yamada; Kazuko Nishimura; Masashi Murakami
Source: Self-asserted source
Yoshihiro Sato

Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2022.3176321
Contributors: Yoshihiro Sato; Satoshi Shibata; Takayoshi Yamada; Kazuko Nishimura; Masayuki Yamasaki; Masashi Murakami; Keiichiro Urabe; Koji Eriguchi
Source: check_circle
Crossref

Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution

Journal of Vacuum Science & Technology B
2022-12 | Journal article
DOI: 10.1116/6.0002181
Contributors: Yoshihiro Sato; Satoshi Shibata; Kazuko Nishimura; Masayuki Yamasaki; Masashi Murakami; Keiichiro Urabe; Koji Eriguchi
Source: check_circle
Crossref

Evaluation of Plasma-Induced Stochastic Damage Creation in the Lateral Direction using pn Junction Structures

2021 20th International Workshop on Junction Technology (IWJT)
2021-06-10 | Conference abstract
DOI: 10.23919/iwjt52818.2021.9609500
Contributors: Yoshihiro Sato; Takayoshi Yamada; Kazuko Nishimura; Masayuki Yamasaki; Masashi Murakami; Keiichiro Urabe; Koji Eriguchi
Source: Self-asserted source
Yoshihiro Sato

Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions

Journal of Vacuum Science & Technology B
2019-12-30 | Journal article
DOI: 10.1116/1.5126344
Source: Self-asserted source
Yoshihiro Sato

Characterization of the distribution of defects introduced by plasma exposure in Si substrate

Journal of Vacuum Science & Technology A
2018-12-31 | Journal article
DOI: 10.1116/1.5048027
Source: Self-asserted source
Yoshihiro Sato

Advanced features of layered-structure organic-photoconductive-film CMOS image sensor: Over 120 dB wide dynamic range function and photoelectric-conversion-controlled global shutter function

Japanese Journal of Applied Physics
2018-10-01 | Journal article
Part of DOI: 10.7567/jjap.57.1002b4
Source: Self-asserted source
Yoshihiro Sato

Characterization of residual defects in plasma-exposed Si substrates using cathodoluminescence and positron annihilation spectroscopy

2017 17th International Workshop on Junction Technology (IWJT)
2017-06-01 | Conference paper
DOI: 10.23919/iwjt.2017.7966519
Source: Self-asserted source
Yoshihiro Sato
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