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Employment (1)

National Institute of Advanced Industrial Science and Technology (AIST): Tsukuba, JP

2002-04-01 to present
Employment
Source: Self-asserted source
Wataru Mizubayashi

Works (50 of 90)

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Page 1 of 2

Simulation study of short-channel effects of tunnel field-effect transistors

Japanese Journal of Applied Physics
2018 | Journal article
WOSUID:

WOS:000430981800034

Contributors: Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Bias temperature instability in tunnel field-effect transistors

Japanese Journal of Applied Physics
2017 | Journal article
WOSUID:

WOS:000398803300001

Contributors: Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Applied Physics Express
2017 | Journal article
WOSUID:

WOS:000424420000001

Contributors: Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

Japanese Journal of Applied Physics
2017 | Journal article
WOSUID:

WOS:000414623100011

Contributors: Fukuda, Koichi; Mori, Takahiro; Asai, Hidehiro; Hattori, Junichi; Mizubayashi, Wataru; Morita, Yukinori; Fuketa, Hiroshi; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Japanese Journal of Applied Physics
2017 | Journal article
WOSUID:

WOS:000414623100010

Contributors: Mori, Takahiro; Migita, Shinji; Fukuda, Koichi; Asai, Hidehiro; Morita, Yukinori; Mizubayashi, Wataru; Liu, Yongxun; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

Japanese Journal of Applied Physics
2017 | Journal article
WOSUID:

WOS:000414623100023

Contributors: Morita, Yukinori; Fukuda, Koichi; Liu, Yongxun; Mori, Takahiro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro; Migita, Shinji; Masahara, Meishoku et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Defect-free Germanium Etching for 3D Fin MOSFET using Neutral Beam Etching

2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano)
2016 | Journal article
WOSUID:

WOS:000391840000232

Contributors: Lee, En-Tzu; Noda, Shuichi; Mizubayashi, Wataru; Endo, Kazuhiko; Samukawa, Seiji; IEEE
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology

2016 Ieee International Electron Devices Meeting (Iedm)
2016 | Book chapter
WOSUID:

WOS:000399108800128

Contributors: Mori, T.; Asai, H.; Hattori, J.; Fukuda, K.; Otsuka, S.; Morita, Y.; O'uchi, S.; Fuketa, H.; Migita, S.; Mizubayashi, W. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials

Dielectrics For Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing
2016 | Book chapter
WOSUID:

WOS:000406799900002

Contributors: Liu, Y. X.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Mizubayashi, W.; Morita, Y.; Migita, S.; Ota, H.; Chikyow, T. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Japanese Journal of Applied Physics
2016 | Journal article
WOSUID:

WOS:000373929400015

Contributors: Morita, Yukinori; Fukuda, Koichi; Mori, Takahiro; Mizubayashi, Wataru; Migita, Shinji; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Matsukawa, Takashi et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Lowering of Effective Work Function Induced by Metal Carbide/HfO2 Interface Dipole for Advanced CMOS

2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano)
2016 | Journal article
WOSUID:

WOS:000391840000036

Contributors: Mizubayashi, Wataru; Ota, Hiroyuki; Migita, Shinji; Morita, Yukinori; Endo, Kazuhiko; IEEE
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

0.8-V Rail-to-Rail Operational Amplifier with Near-Vt Gain-Boosting Stage Fabricated in FinFET Technology for IoT Sensor Nodes

2015 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference (S3s)
2015 | Journal article
WOSUID:

WOS:000370657300059

Contributors: O'uchi, Shin-ichi; Liu, Yongxun; Nakagawa, Tadashi; Mizubayashi, Wataru; Migita, Shinji; Morita, Noriyuki; Ota, Hiroyuki; Ishikawa, Yuki; Tsukada, Junichi; Koike, Hanpei et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

Japanese Journal of Applied Physics
2015 | Journal article
WOSUID:

WOS:000357694000035

Contributors: Liu, Yongxun; Nabatame, Toshihide; Num Nguyen; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

Applied Physics Express
2015 | Journal article
WOSUID:

WOS:000352220700030

Contributors: Mori, Takahiro; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Fukuda, Koichi; Miyata, Noriyuki; Yasuda, Tetsuji; Masahara, Meishoku; Ota, Hiroyuki
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors

Japanese Journal of Applied Physics
2015 | Journal article
WOSUID:

WOS:000357694000007

Contributors: Mizubayashi, Wataru; Onoda, Hiroshi; Nakashima, Yoshiki; Ishikawa, Yuki; Matsukawa, Takashi; Endo, Kazuhiko; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Highly V-t tunable and low variability triangular fin-channel MOSFETs on SOTB

Microelectronic Engineering
2015 | Journal article
WOSUID:

WOS:000362308000069

Contributors: Liu, Y. X.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y.; Migita, S. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

Solid-State Electronics
2015 | Journal article
WOSUID:

WOS:000358294500012

Contributors: Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y. X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Applied Physics Express
2015 | Journal article
WOSUID:

WOS:000354696900025

Contributors: Matsukawa, Takashi; Fukuda, Koichi; Liu, Yongxun; Tsukada, Junichi; Yamauchi, Hiromi; Endo, Kazuhiko; Ishikawa, Yuki; O'uchi, Shin-ichi; Migita, Shinji; Morita, Yukinori et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Solid-State Electronics
2015 | Journal article
WOSUID:

WOS:000359170600028

Contributors: Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Modeling of Parallel Electric Field Tunnel FETs

18th International Workshop on Computational Electronics (Iwce 2015)
2015 | Journal article
WOSUID:

WOS:000380398200026

Contributors: Fukuda, K.; Morita, Y.; Mori, T.; Mizubayashi, W.; Masahara, M.; Yasuda, T.; Migita, S.; Ota, H.; IEEE
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Novel Wafer-Scale Uniform Layer-by-Layer Etching Technology for Line Edge Roughness Reduction and Surface Flattening of 3D Ge Channels

2015 Ieee International Electron Devices Meeting (Iedm)
2015 | Journal article
WOSUID:

WOS:000380472500097

Contributors: Morita, Y.; Maeda, T.; Ota, H.; Mizubayashi, W.; O'uchi, S.; Masahara, M.; Matsukawa, T.; Endo, K.; IEEE
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

PBTI for N-type Tunnel FinFETs

2015 International Conference on IC Design & Technology (ICICDT)
2015 | Journal article
WOSUID:

WOS:000380530800018

Contributors: Mizubayashi, W.; Mori, T.; Fukuda, K.; Liu, Y. X.; Matsukawa, T.; Ishikawa, Y.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation

Japanese Journal of Applied Physics
2015 | Journal article
WOSUID:

WOS:000352792200051

Contributors: Mori, Takahiro; Fukuda, Koichi; Miyata, Noriyuki; Morita, Yukinori; Migita, Shinji; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Applied Physics Letters
2015 | Journal article
WOSUID:

WOS:000350546600075

Contributors: Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Understanding of BTI for Tunnel FETs

2015 Ieee International Electron Devices Meeting (Iedm)
2015 | Journal article
WOSUID:

WOS:000380472500089

Contributors: Mizubayashi, W.; Mori, T.; Fukuda, K.; Ishikawa, Y.; Morita, Y.; Migita, S.; Ota, H.; Liu, Y. X.; O'uchi, S.; Tsukada, J. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Accurate Prediction of PBTI Lifetime for N-type Fin-Channel Tunnel FETs

2014 Ieee International Electron Devices Meeting (Iedm)
2014 | Book chapter
WOSUID:

WOS:000370384800205

Contributors: Mizubayashi, W.; Mori, T.; Fukuda, K.; Liu, Y. X.; Matsukawa, T.; Ishikawa, Y.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Charge Trapping Type SOI-FinFET Flash Memory

Dielectrics For Nanosystems 6: Materials Science, Processing, Reliability, and Manufacturing
2014 | Book chapter
WOSUID:

WOS:000339377500027

Contributors: Liu, Y. X.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of less than 60 mV/decade and Very Low (pA/mu m) Off-Current on a Si CMOS Platform

2014 Ieee International Electron Devices Meeting (Iedm)
2014 | Book chapter
WOSUID:

WOS:000370384800058

Contributors: Morita, Y.; Mori, T.; Fukuda, K.; Mizubayashi, W.; Migita, S.; Matsukawa, T.; Endo, K.; O'uchi, S.; Liu, Y.; Masahara, M. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Experimental Study of Charge Trapping Type FinFET Flash Memory

2014 Ieee International Nanoelectronics Conference (Inec)
2014 | Book chapter
WOSUID:

WOS:000383011300029

Contributors: Liu, Yongxun; Nabatame, Toshihide; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Sinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Experimental study of three- dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

Japanese Journal of Applied Physics
2014 | Journal article
WOSUID:

WOS:000338185100051

Contributors: Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Fabrication and Characterization of 3D Fin-Channel MANOS Type Flash Memory

2014 Ieee Silicon Nanoelectronics Workshop (Snw)
2014 | Book chapter
WOSUID:

WOS:000393376800035

Contributors: Liu, Y. X.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Heated Ion Implantation Technology for FinFET Application

2014 International Workshop on Junction Technology (Iwjt)
2014 | Journal article
WOSUID:

WOS:000355797900028

Contributors: Onoda, Hiroshi; Mizubayashi, Wataru; Nakashima, Yoshiki; Masahara, Meishoku
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Improvement of Epitaxial Channel Quality on Heavily Arsenic-and Boron-doped Si surfaces and Impact on Tunnel FET Performance

Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)
2014 | Book chapter
WOSUID:

WOS:000348858100042

Contributors: Morita, Y.; Mori, T.; Migita, S.; Mizubayashi, W.; Fukuda, K.; Matsukawa, T.; Endo, K.; O'uchi, S.; Liu, Y. X.; Masahara, M. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

Japanese Journal of Applied Physics
2014 | Journal article
WOSUID:

WOS:000338185100024

Contributors: Matsukawa, Takashi; Liu, Yongxun; Endo, Kazuhiko; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; O'uchi, Shinichi; Mizubayashi, Wataru; Ota, Hiroyuki; Migita, Shinji et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Lowest Variability SOI FinFETs Having Multiple V-t by Back-Biasing

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
2014 | Book chapter
WOSUID:

WOS:000380558800055

Contributors: Matsukawa, T.; Fukuda, K.; Liu, Y. X.; Endo, K.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; O'uchi, S.; Mizubayashi, W.; Migita, S. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Ieee Electron Device Letters
2014 | Journal article
WOSUID:

WOS:000338662100035

Contributors: Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Liu, Yong Xun et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Solid-State Electronics
2014 | Journal article
WOSUID:

WOS:000345482000011

Contributors: Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Predictivity of the non-local BTBT model for structure dependencies of tunnel FETs

2014 International Workshop on Computational Electronics (Iwce)
2014 | Journal article
WOSUID:

WOS:000345736700064

Contributors: Fukuda, Koichi; Mizubayashi, Wataru; Morita, Yukinori; Tanabe, Akihito; Masahara, Meishoku; Yasuda, Tetsuji; Migita, Shinji; Ota, Hiroyuki; IEEE
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology

2014 Ieee International Electron Devices Meeting (Iedm)
2014 | Book chapter
WOSUID:

WOS:000370384800073

Contributors: Matsukawa, Takashi; Fukuda, Koichi; Liu, Yongxun; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Endo, Kazuhiko; O'uchi, Shin-ichi; Migita, Shinji; Mizubayashi, Wataru et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Applied Physics Express
2014 | Journal article
WOSUID:

WOS:000331454000031

Contributors: Mori, Takahiro; Yasuda, Tetsuji; Fukuda, Koichi; Morita, Yukinori; Migita, Shinji; Tanabe, Akihito; Maeda, Tatsuro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Liu, Yongxun et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Variation Behavior of Tunnel-FETs Originated from Dopant Concentration at Source Region and Channel Edge Configuration

Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)
2014 | Book chapter
WOSUID:

WOS:000348858100066

Contributors: Migita, S.; Matsukawa, T.; Mori, T.; Fukuda, K.; Morita, Y.; Mizubayashi, W.; Endo, K.; Liu, Y.; O'uchi, S.; Masahara, M. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

Journal of Applied Physics
2013 | Journal article
WOSUID:

WOS:000325780400065

Contributors: Fukuda, K.; Mori, T.; Mizubayashi, W.; Morita, Y.; Tanabe, A.; Masahara, M.; Yasuda, T.; Migita, S.; Ota, H.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Analysis of Threshold Voltage Shifts in Double Gate Tunnel FinFETs: Effects of Improved Electrostatics by Gate Dielectrics and Back Gate Effects

2013 International Symposium on Vlsi Technology, Systems, and Applications (Vlsi-Tsa)
2013 | Book chapter
WOSUID:

WOS:000326324800073

Contributors: Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y. X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Analysis of Vth Flexibility in Ultrathin-BOX SOI FinFETs

2013 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference (S3s)
2013 | Journal article
WOSUID:

WOS:000350882400053

Contributors: Endo, K.; Ishikawa, Y.; Liu, Y.; Matsukawa, T.; O'uchi, S.; Tsukada, J.; Migita, S.; Mizubayashi, W.; Morita, Y.; Ota, H. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Charge Trapping Type FinFET Flash Memory with Al2O3 Blocking Layer

2013 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference (S3s)
2013 | Journal article
WOSUID:

WOS:000350882400062

Contributors: Liu, Y. X.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Guidelines for Symmetric Threshold Voltage in Tunnel FinFETs with Single and Dual Metal Gate Electrodes

2013 Proceedings of the European Solid-State Device Research Conference (Essderc)
2013 | Book chapter
WOSUID:

WOS:000342231600048

Contributors: Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y. X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs

2013 Ieee International Electron Devices Meeting (Iedm)
2013 | Journal article
WOSUID:

WOS:000346509500133

Contributors: Mizubayashi, W.; Onoda, H.; Nakashima, Y.; Ishikawa, Y.; Matsukawa, T.; Endo, K.; Liu, Y. X.; O'uchi, S.; Tsukada, J.; Yamauchi, H. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations

2013 Proceedings of the European Solid-State Device Research Conference (Essderc)
2013 | Book chapter
WOSUID:

WOS:000342231600009

Contributors: Morita, Y.; Mori, T.; Migita, S.; Mizubayashi, W.; Tanabe, A.; Fukuda, K.; Matsukawa, T.; Endo, K.; O'uchi, S.; Liu, Y. X. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Suppressed Variability of Current-Onset Voltage of FinFETs by Improvement of Work Function Uniformity of Metal Gates

2013 International Symposium on Vlsi Technology, Systems, and Applications (Vlsi-Tsa)
2013 | Journal article
WOSUID:

WOS:000326324800033

Contributors: Matsukawa, T.; Liu, Y. X.; Endo, K.; Mizubayashi, W.; Tsukada, J.; Ishikawa, Y.; Yamauchi, H.; O'uchi, S.; Ota, H.; Migita, S. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

Applied Physics Letters
2013 | Journal article
WOSUID:

WOS:000318269300042

Contributors: Matsukawa, T.; Liu, Y. X.; Mizubayashi, W.; Tsukada, J.; Yamauchi, H.; Endo, K.; Ishikawa, Y.; O'uchi, S.; Ota, H.; Migita, S. et al.
Source: Self-asserted source
Wataru Mizubayashi via ResearcherID
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