Personal information

Activities

Employment (5)

The Ohio State University: Columbus, OH, US

1996-09 to present | Professor and CMR Scholar (Electrical & Computer Engineering, Physics)
Employment
Source: Self-asserted source
Leonard Brillson

Xerox Corporation: Rochester, New York, US

1994-06-01 to 1996-06-30 | Research Head (Advanced Componentry Laboratory)
Employment
Source: Self-asserted source
Leonard Brillson

Xerox (United States): Rochester, New York, US

1989-07-01 to 1994-06-30 | Manager (Materials Research Laboratory)
Employment
Source: Self-asserted source
Leonard Brillson

Xerox (United States): Rochester, New York, US

1985-09-01 to 1989-08-31 | Manager (Interfaces and Processing Laboratory)
Employment
Source: Self-asserted source
Leonard Brillson

Xerox: Rochester, NY, US

1972-09-01 to 1989-06-30 | Senior Member, Technical Staff, Principal Scientist (Corporate Research)
Employment
Source: Self-asserted source
Leonard Brillson

Education and qualifications (3)

University of Pennsylvania: Philadelphia, PA, US

1969-09-01 to 1972-09-01 | Ph.D. (Physics)
Education
Source: Self-asserted source
Leonard Brillson

University of Pennsylvania: Philadelphia, Pennsylvania, US

1967-09-01 to 1969-09-01 | M.S. (Physics)
Education
Source: Self-asserted source
Leonard Brillson

Princeton University: Princeton, NJ, US

1963-09-01 to 1967-06-15 | A.B. (Physics)
Education
Source: Self-asserted source
Leonard Brillson

Professional activities (11)

The Ohio State University: Columbus, Ohio, US

2017-06-01 | Ohio State University Distinguished Scholar Award
Distinction
Source: Self-asserted source
Leonard Brillson

National Science Foundation: Alexandria, US

2015-06-01 | Special Research Creativity Award
Distinction
Source: Self-asserted source
Leonard Brillson

Materials Research Society: Pittsburgh, US

2013-06-01 | Materials Research Society Fellow
Distinction
Source: Self-asserted source
Leonard Brillson

American Association For The Advancement of Science: Washington D.C., District of Columbia, US

2012-06-01 | American Association for the Advancement of Science Fellow
Distinction
Source: Self-asserted source
Leonard Brillson

National Science Foundation: Alexandria, Virginia, US

2010-06-01 | NSF American Competitiveness and Innovation Fellowship
Distinction
Source: Self-asserted source
Leonard Brillson

IEEE Foundation: Piscataway, New Jersey, US

2000-06-01 | IEEE Fellow
Distinction
Source: Self-asserted source
Leonard Brillson

IEEE Foundation: Piscataway, New Jersey, US

2000-06-01 | IEEE Technical Achievement Award
Distinction
Source: Self-asserted source
Leonard Brillson

American Vacuum Society: New York, New York, US

1996-06-01 | AVS Gaede-Langmuir Award
Distinction
Source: Self-asserted source
Leonard Brillson

The Institute for Scientific Information on Coffee: Philadelphia, Pennsylvania, US

1993-06-01 | ISI Citation Classic Author
Distinction
Source: Self-asserted source
Leonard Brillson

American Vacuum Society: New York, New York, US

1993-06-01 | American Vacuum Society Fellow
Distinction
Source: Self-asserted source
Leonard Brillson

American Physical Society: College Park, Maryland, US

1984-06-01 | American Physical Society Fellow
Distinction
Source: Self-asserted source
Leonard Brillson

Works (33)

Remote plasma assisted processing and semiconductor interface electronic structure

Journal of Vacuum Science & Technology A
2025-03-01 | Journal article
Contributors: Leonard J. Brillson
Source: check_circle
Crossref

Native Point Defects Controlling Piezoelectric Voltage in Strained ZnO Microwires

ACS Omega
2025-01-14 | Journal article
Contributors: Kalpak Duddella; Kamila Thompson; Micah Haseman; Leonard J. Brillson
Source: check_circle
Crossref

Point defect distributions in ultrafast laser-induced periodic surface structures on β-Ga2O3

Journal of Applied Physics
2024-10-07 | Journal article
Contributors: Daram N. Ramdin; Emma DeAngelis; Mohamed Yaseen Noor; Micah S. Haseman; Enam A. Chowdhury; Leonard J. Brillson
Source: check_circle
Crossref

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes

APL Materials
2024-10-01 | Journal article
Contributors: Daram N. Ramdin; Hsien-Lien Huang; Christopher Chae; Sushovan Dhara; Siddharth Rajan; Jinwoo Hwang; Leonard J. Brillson
Source: check_circle
Crossref

Defects at nanoscale semiconductor interfaces: Challenges and opportunities

Journal of Materials Research
2024-01-28 | Journal article
Contributors: Leonard J. Brillson
Source: check_circle
Crossref

Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires

ACS Applied Materials & Interfaces
2023-06-28 | Journal article
Contributors: Micah S. Haseman; Hantian Gao; Kalpak Duddella; Leonard J. Brillson
Source: check_circle
Crossref

Lithium Spatial Distribution and Split-Off Electronic Bands at Nanoscale V2O5/LiPON Interfaces

ACS Applied Energy Materials
2023-05-08 | Journal article
Contributors: Zach Levy; Victoria Castagna Ferrari; Pablo Rosas; Mitchell J. Walker; Kalpak Duddella; Micah Haseman; David Stewart; Gary Rubloff; Leonard J. Brillson
Source: check_circle
Crossref

Electric field induced migration of native point defects in Ga2O3 devices

Journal of Applied Physics
2023-01-21 | Journal article
Contributors: Micah S. Haseman; Daram N. Ramdin; Wenshen Li; Kazuki Nomoto; Debdeep Jena; Huili Grace Xing; Leonard J. Brillson
Source: check_circle
Crossref

Oxidation of quantum dots encapsulated in block copolymer micelles as a function of polymer terminal charge

Nanoscale
2022 | Journal article
Contributors: Kil Ho Lee; Brenton A. Noesges; Chris McPherson; Faiz Khan; Leonard J. Brillson; Jessica O. Winter
Source: check_circle
Crossref

Nanoscale interplay of native point defects near Sr-deficient SrxTiO3/SrTiO3 interfaces

Journal of Vacuum Science & Technology A
2022-07 | Journal article
Contributors: Brenton A. Noesges; Daesu Lee; Jung-Woo Lee; Chang-Beom Eom; Leonard J. Brillson
Source: check_circle
Crossref

Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

Journal of Applied Physics
2022-05-28 | Journal article
Contributors: Daram N. Ramdin; Micah S. Haseman; Hsien-Lien Huang; Kevin D. Leedy; Jinwoo Hwang; Leonard J. Brillson
Source: check_circle
Crossref

Deep level defect spectroscopies of complex oxide surfaces and interfaces

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2021-12-01 | Journal article
Contributors: Jun Zhang; Kyle McNicholas; Snjezana Balaz; Zhao Quan Zeng; Darrell Schlom; Leonard J. Brillson
Source: check_circle
Crossref

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2021-09-01 | Journal article
Contributors: Hantian Gao; Shreyas Muralidharan; Md Rezaul Karim; Lei R. Cao; Kevin D. Leedy; Hongping Zhao; Siddharth Rajan; David C. Look; Leonard J. Brillson
Source: check_circle
Crossref

Nanoscale depth and lithiation dependence of V2O5 band structure by cathodoluminescence spectroscopy

Journal of Materials Chemistry A
2020 | Journal article
Contributors: Mitchell J. Walker; Angelique Jarry; Nick Pronin; Jake Ballard; Gary W. Rubloff; Leonard J. Brillson
Source: check_circle
Crossref

Elucidating Structural Transformations in LixV2O5 Electrochromic Thin Films by Multimodal Spectroscopies

Chemistry of Materials
2020-09-08 | Journal article
Contributors: Angelique Jarry; Mitchell Walker; Stefan Theodoru; Leonard J. Brillson; Gary W. Rubloff
Source: check_circle
Crossref

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Applied Physics Letters
2020-08-24 | Journal article
Contributors: Geoffrey M. Foster; Andrew Koehler; Mona Ebrish; James Gallagher; Travis Anderson; Brenton Noesges; Leonard Brillson; Brendan Gunning; Karl D. Hobart; Francis Kub
Source: check_circle
Crossref

Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy

Physical Review Materials
2020-08-17 | Journal article
Contributors: Tiancong Zhu; Dante J. O’Hara; Brenton A. Noesges; Menglin Zhu; Jacob J. Repicky; Mark R. Brenner; Leonard J. Brillson; Jinwoo Hwang; Jay A. Gupta; Roland K. Kawakami
Source: check_circle
Crossref

Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure

APL Materials
2020-08-01 | Journal article
Contributors: Micah S. Haseman; Brenton A. Noesges; Seth Shields; John S. Cetnar; Amber N. Reed; Hayder A. Al-Atabi; James H. Edgar; Leonard J. Brillson
Source: check_circle
Crossref

Chemical migration and dipole formation at van der Waals interfaces between magnetic transition metal chalcogenides and topological insulators

Physical Review Materials
2020-05-08 | Journal article
Contributors: Brenton A. Noesges; Tiancong Zhu; Jacob J. Repicky; Sisheng Yu; Fengyuan Yang; Jay A. Gupta; Roland K. Kawakami; Leonard J. Brillson
Source: check_circle
Crossref

Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO3

Journal of Applied Physics
2020-03-07 | Journal article | Author
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Hantian Gao; Sulata Sahu; Clive Randall; Leonard Brillson
Source: Self-asserted source
Leonard Brillson
grade
Preferred source (of 3)‎

Native Point Defect Measurement and Manipulation in ZnO Nanostructures

Materials
2019-07-12 | Journal article
Part of ISSN: 1996-1944
Contributors: Leonard Brillson; Jonathan Cox; Hantian Gao; Geoffrey Foster; William Ruane; Alexander Jarjour; Martin Allen; David Look; Holger von Wenckstern; Marius Grundmann
Source: Self-asserted source
Leonard Brillson

Erratum: “Review of using gallium nitride for ionizing radiation detection” [Appl. Phys. Rev. 2, 031102 (2015)]

Applied Physics Reviews
2019-06 | Journal article
Contributors: Jinghui Wang; Padhraic Mulligan; Leonard Brillson; Lei R. Cao
Source: check_circle
Crossref

Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts

Nano Letters
2018-11-14 | Journal article
Contributors: Jonathan W. Cox; Geoffrey M. Foster; Alexander Jarjour; Holger von Wenckstern; Marius Grundmann; Leonard J. Brillson
Source: check_circle
Crossref

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Journal of Electronic Materials
2018-09-19 | Journal article
Contributors: L. J. Brillson; G. M. Foster; J. Cox; W. T. Ruane; A. B. Jarjour; H. Gao; H. von Wenckstern; M. Grundmann; B. Wang; D. C. Look et al.
Source: check_circle
Crossref

Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy

APL Materials
2018-08 | Journal article
Contributors: Igor V. Pinchuk; Thaddeus J. Asel; Andrew Franson; Tiancong Zhu; Yuan-Ming Lu; Leonard J. Brillson; Ezekiel Johnston-Halperin; Jay A. Gupta; Roland K. Kawakami
Source: check_circle
Crossref

Bandgap and band edge positions in compositionally graded ZnCdO

Journal of Applied Physics
2018-07-07 | Journal article
Contributors: I. J. T. Jensen; K. M. Johansen; W. Zhan; V. Venkatachalapathy; L. Brillson; A. Yu. Kuznetsov; Ø. Prytz
Source: check_circle
Crossref

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Annalen der Physik
2018-02 | Journal article
Contributors: Alexander Jarjour; Jon W. Cox; William T. Ruane; Holger Von Wenckstern; Marius Grundmann; Leonard J. Brillson
Source: check_circle
Crossref

Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers

Applied Physics Letters
2017-09-04 | Journal article
Contributors: Geoffrey M. Foster; Hantian Gao; Grace Mackessy; Alana M. Hyland; Martin W. Allen; Buguo Wang; David C. Look; Leonard J. Brillson
Source: check_circle
Crossref

Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

Applied Physics Letters
2016-10-03 | Journal article
Contributors: G. M. Foster; G. Faber; Y.-F. Yao; C. C. Yang; E. R. Heller; D. C. Look; L. J. Brillson
Source: check_circle
Crossref

Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy

Journal of Applied Physics
2016-09-14 | Journal article
Contributors: Hantian Gao; Thaddeus J. Asel; Jon W. Cox; Yuanyao Zhang; Jian Luo; L. J. Brillson
Source: check_circle
Crossref

Review of using gallium nitride for ionizing radiation detection

Applied Physics Reviews
2015-09 | Journal article
Contributors: Jinghui Wang; Padhraic Mulligan; Leonard Brillson; Lei R. Cao
Source: check_circle
Crossref

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3

Applied Physics Letters
2015-05-04 | Journal article
Contributors: Z. Q. Zeng; A. Podpirka; S. W. Kirchoefer; T. J. Asel; L. J. Brillson
Source: check_circle
Crossref

Applications of depth-resolved cathodoluminescence spectroscopy

Journal of Physics D: Applied Physics
2012-05-09 | Journal article
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Contributors: L J Brillson
Source: Self-asserted source
Leonard Brillson
grade
Preferred source (of 2)‎

Peer review (9 reviews for 7 publications/grants)

Review activity for ACS applied materials & interfaces. (2)
Review activity for ACS applied nano materials. (1)
Review activity for Advanced optical materials (1)
Review activity for AIP advances. (1)
Review activity for APL materials. (2)
Review activity for Journal of applied physics. (1)
Review activity for Nature communications (1)