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Works (4)

Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

Journal of Physics: Conference Series
2021 | Conference paper
EID:

2-s2.0-85122349186

Part of ISSN: 17426596 17426588
Contributors: Sedykh, S.V.; Rybalka, S.B.; Demidov, A.A.; Kulchenkov, E.A.
Source: Self-asserted source
Сергей Седых via Scopus - Elsevier

Test element for high voltage SiC Schottky diodes quality control

Journal of Physics: Conference Series
2020 | Conference paper
EID:

2-s2.0-85098888392

Part of ISSN: 17426596 17426588
Contributors: Sedykh, S.V.; Rybalka, S.B.; Kulchenkov, E.A.; Demidov, A.A.; Drakin, A.Yu.; Bryukhno, N.A.; Kuftov, I.V.
Source: Self-asserted source
Сергей Седых via Scopus - Elsevier

Determation of dV/dt values for domestic SiC Schottky diodes

Journal of Physics: Conference Series
2019 | Conference paper
EID:

2-s2.0-85078187936

Part of ISSN: 17426596 17426588
Contributors: Sedykh, S.V.; Rybalka, S.B.; Drakin, A.Y.; Demidov, A.A.; Kulchenkov, E.A.
Source: Self-asserted source
Сергей Седых via Scopus - Elsevier

Ti/4H-SiC Schottky diode breakdown voltage with different thickness of 4H-SiC epitaxial layer

Journal of Physics: Conference Series
2018 | Conference paper
EID:

2-s2.0-85060998369

Part of ISSN: 17426596 17426588
Contributors: Sedykh, S.V.; Rybalka, S.B.; Drakin, A.Yu.; Demidov, A.A.; Ponomaryova, N.S.; Shishkina, O.A.
Source: Self-asserted source
Сергей Седых via Scopus - Elsevier