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Employment (2)

Universidad de Granada: Granada, Andalucía, ES

2022-05-01 to 2022-11-01 | Plan Propio Program for postdoctoral researchers (Electronics and computers technology)
Employment
Source: Self-asserted source
Alejandro Toral-Lopez

Universidad de Granada Facultad de Ciencias: Granada, Andalucía, ES

2017-10-01 to 2022-02-28 | Predoctoral Beca FPU (Electrónica y Tecnología de Computadores)
Employment
Source: Self-asserted source
Alejandro Toral-Lopez

Education and qualifications (2)

Universidad de Granada: Granada, Andalucía, ES

2015-10-01 to 2017-03-05 | Master in Telecommunication Engineering
Education
Source: Self-asserted source
Alejandro Toral-Lopez

Universidad de Granada: Granada, Andalucía, ES

2011-09-15 to 2015-09-18 | Degree in Telecommunication Engineering
Education
Source: Self-asserted source
Alejandro Toral-Lopez

Professional activities (1)

Universidad de Granada: Granada, Andalucía, ES

2017-03 to present | PhD Student (Electrónica y Tecnología de Computadores)
Membership
Source: Self-asserted source
Alejandro Toral-Lopez

Works (21)

Reconfigurable frequency multipliers based on graphene field-effect transistors

Discover Nano
2023-10-05 | Journal article
DOI: 10.1186/s11671-023-03884-8
Part of ISSN: 2731-9229
Contributors: A. Toral-Lopez; E. G. Marin; F. Pasadas; M. D. Ganeriwala; F. G. Ruiz; D. Jiménez; A. Godoy
Source: Self-asserted source
Alejandro Toral-Lopez

Compact Modeling of Two-Dimensional Field-Effect Biosensors

Sensors
2023-02 | Journal article | Author
DOI: 10.3390/s23041840
Contributors: Francisco Pasadas; Tarek El Grour; Enrique G. Marin; Alberto Medina-Rull; Alejandro Toral-Lopez; Juan Cuesta-Lopez; Francisco J. Garcia Ruiz; Lassaad EL MIR; Andres Godoy Medina
Source: check_circle
Multidisciplinary Digital Publishing Institute

Investigation of the Optical Properties of Indium Tin Oxide Thin Films by Double Integration Sphere Combined with the Numerical IAD Method

Materials
2023-02 | Journal article | Author
DOI: 10.3390/ma16041425
Contributors: Alejandro Toral-Lopez; María M. Pérez; Ana Belen Rodríguez-Águila; JUAN DE LA CRUZ CARDONA PÉREZ; Ana-Maria-Andreea Ionescu ; Andres Godoy Medina
Source: check_circle
Multidisciplinary Digital Publishing Institute

Variability Assessment of the Performance of MoS<sub>2</sub>-Based BioFETs

Chemosensors
2023-01 | Journal article | Author
DOI: 10.3390/chemosensors11010057
Contributors: Juan Cuesta-Lopez; Alejandro Toral-Lopez; Enrique G. Marin; Francisco J. Garcia Ruiz; Francisco Pasadas; Alberto Medina-Rull; Andres Godoy Medina
Source: check_circle
Multidisciplinary Digital Publishing Institute

Graphene BioFET sensors for SARS-CoV-2 detection: a multiscale simulation approach

Nanoscale Advances
2022 | Journal article | Author
DOI: 10.1039/d2na00357k
Part of ISSN: 2516-0230
Contributors: Alejandro Toral-Lopez; Daria Kokh; Enrique G. Marin; Rebecca Wade; Andres Godoy Medina
Source: Self-asserted source
Alejandro Toral-Lopez

Multi-scale modeling of 2D GaSe FETs with strained channels

Nanotechnology
2022-03-05 | Journal article | Author
DOI: 10.1088/1361-6528/ac3ce2
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Contributors: Alejandro Toral-Lopez; H. Santos; Enrique G. Marin; Francisco J. Garcia Ruiz; Juan Jose Palacios; Andres Godoy Medina
Source: Self-asserted source
Alejandro Toral-Lopez

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Nanoscale Advances
2021 | Journal article | Author
DOI: 10.1039/d0na00953a
Part of ISSN: 2516-0230
Contributors: Alejandro Toral-Lopez; Francisco Pasadas; E. G. Marin; Alberto Medina-Rull; J. M. Gonzalez-Medina; F. G. Ruiz; D. Jiménez; Andres Godoy Medina
Source: Self-asserted source
Alejandro Toral-Lopez

Memcapacitor and Meminductor Circuit Emulators: A Review

Electronics
2021-05 | Journal article | Author
DOI: 10.3390/electronics10111225
Contributors: Francisco J. Romero; Akiko Ohata; Alejandro Toral-Lopez; Andres Godoy Medina; Diego P. Morales; Noel Rodriguez
Source: check_circle
Multidisciplinary Digital Publishing Institute

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

IEEE Access
2020 | Journal article | Author
DOI: 10.1109/access.2020.3038153
Part of ISSN: 2169-3536
Contributors: Alberto Medina-Rull; Francisco Pasadas; Enrique G. Marin; Alejandro Toral-Lopez; Juan Cuesta-Lopez; Andres Godoy Medina; David Jimenez; Francisco J. Garcia Ruiz
Source: Self-asserted source
Alejandro Toral-Lopez

Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/jeds.2020.3021031
Part of ISSN: 2168-6734
Source: Self-asserted source
Alejandro Toral-Lopez

Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2020-04 | Conference paper
DOI: 10.1109/edtm47692.2020.9117875
ISBN: 9781728125398
Source: Self-asserted source
Alejandro Toral-Lopez

Resistive Switching in Graphene Oxide

Frontiers in Materials
2020-01-31 | Journal article
DOI: 10.3389/fmats.2020.00017
Part of ISSN: 2296-8016
Contributors: Alejandro Toral-Lopez; Francisco J. Romero; Alejando Toral; Alberto Medina-Rull; Carmen Lucia Moraila-Martinez; Diego P. Morales; Akiko Ohata; Andres Godoy; Francisco G. Ruiz; Noel Rodriguez
Source: Self-asserted source
Alejandro Toral-Lopez

Assessment of three electrolyte–molecule electrostatic interaction models for 2D material based BioFETs

Nanoscale Advances
2019 | Journal article | Author
DOI: 10.1039/c8na00109j
Part of ISSN: 2516-0230
Contributors: Alejandro Toral-Lopez; Enrique G. Marin; Jose Maria Gonzalez-Medina; Francisco J. Romero; Francisco J. Garcia Ruiz; Diego P. Morales; Noel Rodriguez; Andres Godoy Medina
Source: Self-asserted source
Alejandro Toral-Lopez

Inexpensive and flexible nanographene-based electrodes for ubiquitous electrocardiogram monitoring

npj Flexible Electronics
2019-12 | Journal article
DOI: 10.1038/s41528-019-0056-2
Part of ISSN: 2397-4621
Contributors: Alejandro Toral-Lopez; Francisco J. Romero; Encarnacion Castillo; Almudena Rivadeneyra; Alejandro Toral-Lopez; Markus Becherer; Francisco G. Ruiz; Noel Rodriguez; Diego P. Morales
Source: Self-asserted source
Alejandro Toral-Lopez

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

npj 2D Materials and Applications
2019-12 | Journal article | Author
DOI: 10.1038/s41699-019-0130-6
Part of ISSN: 2397-7132
Contributors: Francisco Pasadas; Enrique G. Marin; Alejandro Toral-Lopez; Francisco J. Garcia Ruiz; Andres Godoy Medina; Saungeun Park; Deji Akinwande; David Jiménez
Source: Self-asserted source
Alejandro Toral-Lopez

Determination of the optical properties in transparent conductive electrodes based on an indium-tin oxide coating using the IAD method

Fourth International Conference on Applications of Optics and Photonics
2019-10-03 | Conference paper
DOI: 10.1117/12.2527355
ISBN: 9781510631632
ISBN: 9781510631649
Source: Self-asserted source
Alejandro Toral-Lopez

Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2019-09 | Conference paper
DOI: 10.1109/sispad.2019.8870562
ISBN: 9781728109404
Source: Self-asserted source
Alejandro Toral-Lopez
grade
Preferred source (of 5)‎

GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Nanomaterials
2019-07-18 | Journal article | Author
DOI: 10.3390/nano9071027
Part of ISSN: 2079-4991
Contributors: Alejandro Toral-Lopez; Enrique G. Marin; Francisco Pasadas; Jose Maria Gonzalez-Medina; Francisco J. Garcia Ruiz; David Jiménez; Andres Godoy Medina
Source: Self-asserted source
Alejandro Toral-Lopez

Laser-Fabricated Reduced Graphene Oxide Memristors

Nanomaterials
2019-06-19 | Journal article
DOI: 10.3390/nano9060897
Part of ISSN: 2079-4991
Contributors: Alejandro Toral-Lopez; Romero; Toral-Lopez; Ohata; Morales; Ruiz; Godoy; Rodriguez
Source: Self-asserted source
Alejandro Toral-Lopez

Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

Journal of Physics D: Applied Physics
2017-12-13 | Journal article
DOI: 10.1088/1361-6463/aa9543
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Contributors: Alejandro Toral-Lopez; Celso Jesús Martínez Blanque; E G Marin; A Toral; J M Gonzalez-Medina; F G Ruiz; A Godoy; F Gámiz
Source: Self-asserted source
Alejandro Toral-Lopez

On the influence of the back-gate bias on InGaAs Trigate MOSFETs

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016-01-25 | Conference paper
DOI: 10.1109/ulis.2016.7440095
ISBN: 9781467386098
Source: Self-asserted source
Alejandro Toral-Lopez
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