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Works (25)

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

Journal of Physics: Condensed Matter
2020-01-01 | Journal article
Part of ISSN: 0953-8984
Part of ISSN: 1361-648X
Source: Self-asserted source
Gabriele Penazzi

Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2019-09 | Conference paper
Part of ISBN: 9781728109404
Source: Self-asserted source
Gabriele Penazzi

The spectral adjustment in nanoscale transport combined with the density functional based tight binding method

Computational Materials Science
2017-06 | Journal article
Part of ISSN: 0927-0256
Source: Self-asserted source
Gabriele Penazzi

A Self Energy Model of Dephasing in Molecular Junctions

The Journal of Physical Chemistry C
2016-08-04 | Journal article
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Source: Self-asserted source
Gabriele Penazzi

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

Physical Review Letters
2016-01-15 | Journal article
Part of ISSN: 0031-9007
Part of ISSN: 1079-7114
Source: Self-asserted source
Gabriele Penazzi

Permittivity of Oxidized Ultra-Thin Silicon Films From Atomistic Simulations

IEEE Electron Device Letters
2015-10 | Journal article
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Gabriele Penazzi

Atomic level simulation of permittivity of oxidized ultra-thin Si channels

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2015-09 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Controlling Electronic Structure and Transport Properties of Zigzag Graphene Nanoribbons by Edge Functionalization with Fluorine

The Journal of Physical Chemistry C
2015-09-10 | Journal article
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Source: Self-asserted source
Gabriele Penazzi

TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder

MRS Proceedings
2014 | Journal article
Part of ISSN: 0272-9172
Part of ISSN: 1946-4274
Source: Self-asserted source
Gabriele Penazzi

Towards atomic level simulation of electron devices including the semiconductor-oxide interface

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2014-09 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Atomistic simulations of InGaN/GaN random alloy quantum well LEDs

physica status solidi (c)
2014-02 | Journal article
Part of ISSN: 1862-6351
Source: Self-asserted source
Gabriele Penazzi

Coupling atomistic and continuous media models for electronic device simulation

Journal of Computational Electronics
2013-12 | Journal article
Part of ISSN: 1569-8025
Part of ISSN: 1572-8137
Source: Self-asserted source
Gabriele Penazzi

Simulation of random alloy effects in InGaN/GaN LEDs

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
2013-08 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Atomistic Modeling of Charge Transport across a Carbon Nanotube–Polyethylene Junction

The Journal of Physical Chemistry C
2013-04-25 | Journal article
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Source: Self-asserted source
Gabriele Penazzi

Possibility of a Field Effect Transistor Based on Dirac Particles in Semiconducting Anatase-TiO2 Nanowires

Nano Letters
2013-03-13 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Source: Self-asserted source
Gabriele Penazzi

The Multiscale Paradigm in Electronic Device Simulation

IEEE Transactions on Electron Devices
2011-05 | Journal article
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Gabriele Penazzi

Concurrent multiscale simulation of electronic devices

Journal of Computational Electronics
2010-12 | Journal article
Part of ISSN: 1569-8025
Part of ISSN: 1572-8137
Source: Self-asserted source
Gabriele Penazzi

Point defect scattering in silicon nanowires

2010 14th International Workshop on Computational Electronics
2010-10 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Multiscale thermal modeling of GaN/AlGaN quantum dot LEDs

Physics and Simulation of Optoelectronic Devices XVIII
2010-02-11 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs

Physics and Simulation of Optoelectronic Devices XVIII
2010-02-11 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Calculation of optical properties of a quantum dot embedded in a GaN/AlGaN nanocolumn

Superlattices and Microstructures
2010-01 | Journal article
Part of ISSN: 0749-6036
Source: Self-asserted source
Gabriele Penazzi

Coupling atomistic and finite element approaches for the simulation of optoelectronic devices

Optical and Quantum Electronics
2009-07 | Journal article
Part of ISSN: 0306-8919
Part of ISSN: 1572-817X
Source: Self-asserted source
Gabriele Penazzi

Multiscale-Multiphysics Simulation of Nanostructured Devices: the TiberCAD Project

2009 13th International Workshop on Computational Electronics
2009-05 | Conference paper
Source: Self-asserted source
Gabriele Penazzi
grade
Preferred source (of 2)‎

Multiscale Atomistic Simulations of High-k MOSFETs

2008 8th IEEE Conference on Nanotechnology
2008-08 | Conference paper
Source: Self-asserted source
Gabriele Penazzi

Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs

Simulation of Semiconductor Processes and Devices 2007
2007 | Conference paper
Part of ISBN: 9783211728604
Part of ISBN: 9783211728611
Source: Self-asserted source
Gabriele Penazzi