Personal information

Nanoelectronics, Electronic Materials, Quantum Transport
Iran

Activities

Employment (1)

Arak University: Arak, Markazi Province, IR

Assistant Professor (Electrical Engineering)
Employment
Source: Self-asserted source
Majid Sanaeepur

Education and qualifications (3)

University of Guilan: Rasht, Guilan Province, IR

BS (Faculty of Engineering)
Education
Source: Self-asserted source
Majid Sanaeepur

Shahid Beheshti University: Tehran, Tehran Province, IR

PhD (Electrical Engineering)
Education
Source: Self-asserted source
Majid Sanaeepur

Shahid Beheshti University: Tehran, Tehran Province, IR

MS (Electrical Engineering)
Education
Source: Self-asserted source
Majid Sanaeepur

Works (18)

Power-delay-product optimal repeater design for horizontal and vertical multilayer graphene nanoribbon interconnects

Journal of Computational Electronics
2022 | Journal article
EID:

2-s2.0-85134303907

Part of ISSN: 15728137 15698025
Contributors: Sanaeepur, M.; Momeni, M.; Mahmoudi, A.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

A comprehensive comparative study of the performance of carbon- and copper-based interconnects in ultra-large-scale integrated circuits

International Journal of Circuit Theory and Applications
2021 | Journal article
EID:

2-s2.0-85105661641

Part of ISSN: 1097007X 00989886
Contributors: Sanaeepur, M.; Mahmoudi, A.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Polymeric piezoresistive airflow sensor to monitor respiratory patterns

Journal of the Royal Society Interface
2021 | Journal article
EID:

2-s2.0-85122450962

Part of ISSN: 17425662 17425689
Contributors: Moshizi, S.A.; Abedi, A.; Sanaeepur, M.; Pastras, C.J.; Han, Z.J.; Wu, S.; Asadnia, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

A comparative computational study of tunneling transistors based on vertical graphene-hBCN heterostructures

Journal of Applied Physics
2020 | Journal article
EID:

2-s2.0-85080949846

Part of ISSN: 10897550 00218979
Contributors: Ebrahimi, M.; Horri, A.; Sanaeepur, M.; Tavakoli, M.B.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

All-2D-Materials-Based Interconnects

Journal of Electronic Materials
2020 | Journal article
EID:

2-s2.0-85088589165

Part of ISSN: 1543186X 03615235
Contributors: Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Comparative study of crosstalk noise and delay in MLGNR and Cu interconnects

2020 28th Iranian Conference on Electrical Engineering, ICEE 2020
2020 | Conference paper
EID:

2-s2.0-85098321511

Contributors: Sanaeepur, M.; Mahmoudi, A.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

Beilstein Journal of Nanotechnology
2020 | Journal article
EID:

2-s2.0-85085550253

Part of ISSN: 21904286
Contributors: Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Negative differential resistance in nanoscale heterostructures based on zigzag graphene nanoribbons anti-symmetrically decorated with BN

Superlattices and Microstructures
2020 | Journal article
EID:

2-s2.0-85085842186

Part of ISSN: 10963677 07496036
Contributors: Esmaeili, M.; Jafari, M.R.; Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Propagation delay and stability analysis of MWCNT and MLGNR interconnects

2020 28th Iranian Conference on Electrical Engineering, ICEE 2020
2020 | Conference paper
EID:

2-s2.0-85098334203

Contributors: Mahmoudi, A.; Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Tight-binding description of graphene–BCN–graphene layered semiconductors

Journal of Computational Electronics
2020 | Journal article
EID:

2-s2.0-85077708070

Part of ISSN: 15728137 15698025
Contributors: Ebrahimi, M.; Horri, A.; Sanaeepur, M.; Tavakoli, M.B.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Ultrascaled Resonant Tunneling Diodes Based on BN Decorated Zigzag Graphene Nanoribbon Lateral Heterostructures

IEEE Transactions on Electron Devices
2020 | Journal article
EID:

2-s2.0-85078927354

Part of ISSN: 15579646 00189383
Contributors: Sanaeepur, M.; Jafari, M.R.; Esmaeili, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Crosstalk Delay and Stability Analysis of MLGNR Interconnects on Rough Surface Dielectrics

IEEE Transactions on Nanotechnology
2019 | Journal article
EID:

2-s2.0-85075647189

Part of ISSN: 19410085 1536125X
Contributors: Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Dielectric surface roughness scattering limited performance of MLGNR interconnects

IEEE Transactions on Electromagnetic Compatibility
2019 | Journal article
EID:

2-s2.0-85047802487

Part of ISSN: 00189375
Contributors: Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

On the Resistivity of Multi-Layer Graphene Nanoribbon Interconnects

ICEE 2019 - 27th Iranian Conference on Electrical Engineering
2019 | Conference paper
EID:

2-s2.0-85071046711

Contributors: Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

Superlattices and Microstructures
2015 | Journal article
EID:

2-s2.0-84935826269

Part of ISSN: 10963677 07496036
Contributors: Goharrizi, A.Y.; Sanaeepur, M.; Sharifi, M.J.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

Beilstein Journal of Nanotechnology
2014 | Journal article
EID:

2-s2.0-84907575669

Part of ISSN: 21904286
Contributors: Sanaeepur, M.; Goharrizi, A.Y.; Sharifi, M.J.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Performance analysis of graphene nanoribbon field effect transistors in the presence of surface roughness

IEEE Transactions on Electron Devices
2014 | Journal article
EID:

2-s2.0-84897456301

Part of ISSN: 00189383
Contributors: Sanaeepur, M.; Goharrizi, A.Y.; Sharifi, M.J.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier

Schottky-barrier CNTFET and resonant transmission through it

ICAST 2009 - 2nd International Conference on Adaptive Science and Technology
2009 | Conference paper
EID:

2-s2.0-77950957607

Contributors: Sharifi, M.J.; Sanaeepur, M.
Source: Self-asserted source
Majid Sanaeepur via Scopus - Elsevier