Personal information

Websites & social links

UCAM, Universidad Católica de Murcia
Profile at Research Gate

Other IDs

ResearcherID: F-2313-2016

Keywords

Solid State Physics, Semiconductors, Materials Science, Atomistic Simulation, Kinetic Monte Carlo

Countries

Spain

Activities

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Employment (6)

Universidad Católica San Antonio de Murcia: Murcia, Murcia, ES

2013-09 to present | Profesor Titular de Universidad (Dpto. Ciencias Politécnicas)
Employment
Source: Self-asserted source
Pedro Castrillo

Universidad de Valladolid: Valladolid, Castilla y León, ES

1996-10 to 2013-09 | Profesor Titular de Universidad (Dpto. E. y Electrónica)
Employment
Source: Self-asserted source
Pedro Castrillo

Lunds Universitet: Lund, SE

1995-10 to 1996-09 | post-doctoral, Human Capital and Mobility (Solid State Physics Department)
Employment
Source: Self-asserted source
Pedro Castrillo

Universidad de Valladolid: Valladolid, Castilla y León, ES

1994-10 to 1995-09 | Ayudante de Escuela Universitaria (Dpto. E. y Electrónica)
Employment
Source: Self-asserted source
Pedro Castrillo

Lunds Universitet: Lund, SE

1994-01 to 1994-09 | post-doctoral, FPU (Solid State Physics Department)
Employment
Source: Self-asserted source
Pedro Castrillo

Consejo Superior de Investigaciones Científicas: Madrid, Madrid, ES

1990-01 to 1993-12 | pre-doctoral, FPI (Centro Nacional de Microelectrónica)
Employment
Source: Self-asserted source
Pedro Castrillo

Education and qualifications (2)

Universidad de Valladolid Facultad de Ciencias: Valladolid, Castilla y León, ES

1993-12 | Doctor en Física
Education
Source: Self-asserted source
Pedro Castrillo

Universidad de Valladolid Facultad de Ciencias: Valladolid, Castilla y León, ES

1984-10 to 1989-06 | Licenciado en Física
Education
Source: Self-asserted source
Pedro Castrillo

Works (50 of 69)

Items per page:
Page 1 of 2

REDUCED-SCALE MODELS AS STRATEGY FOR IMPROVING THE UNDERGRADUATE LEARNING PROCESS IN THE FIELD OF STRUCTURAL ENGINEERING

2022-03 | Conference paper
DOI: 10.21125/inted.2022.2412
Contributors: Francisco Pellicer-Martínez; Alejandro Mateo Hernández-Díaz; Jorge Pérez-Aracil; Pedro Castrillo
Source: check_circle
Crossref

Quasi-atomistic modeling of the microstructure evolution in binary alloys and its application to the FeCr case

Acta Materialia
2015 | Journal article
DOI: 10.1016/j.actamat.2015.05.040
WOSUID:

WOS:000358626200035
Contributors: Dopico, Ignacio; Castrillo, Pedro; Martin-Bragado, Ignacio
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters

Physica Status Solidi a-Applications and Materials Science
2014 | Journal article
DOI: 10.1002/pssa.201300158
WOSUID:

WOS:000331065900024
Contributors: Martin-Bragado, Ignacio; Zographos, Nikolas; Castrillo, Pedro
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Modeling of boron diffusion in silicon-germanium alloys using Kinetic Monte Carlo

Solid-State Electronics
2014 | Journal article
DOI: 10.1016/j.sse.2013.12.007
WOSUID:

WOS:000331924700010
Contributors: Dopico, Ignacio; Castrillo, Pedro; Martin-Bragado, Ignacio
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Effective electrical resistance due to current-induced heat flow in thermoelectric generators

Proceedings of the 2013 Spanish Conference on Electron Devices
2013 | Book chapter
WOSUID:

WOS:000320660000039
Contributors: Castrillo, Pedro; Miguel Salgado, Jose
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Process Modeling of Chemical and Stress Effects in SiGe

Ion Implantation Technology 2012
2012 | Book chapter
DOI: 10.1063/1.4766526
WOSUID:

WOS:000312160700049
Contributors: Zographos, Nikolas; Zechner, Christoph; Castrillo, Pedro; Martin-Bragado, Ignacio
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

Journal of Applied Physics
2011 | Journal article
DOI: 10.1063/1.3581113
WOSUID:

WOS:000292115900048
Contributors: Castrillo, P.; Pinacho, R.; Jaraiz, M.; Rubio, J. E.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Thin Solid Films
2010 | Journal article
DOI: 10.1016/j.tsf.2009.10.113
WOSUID:

WOS:000275615100036
Contributors: Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Physical Review B
2010 | Journal article
DOI: 10.1103/PhysRevB.81.033203
WOSUID:

WOS:000274002300008
Contributors: Santos, I.; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz, L.; Marques, L. A.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Comprehensive model of damage accumulation in silicon

Journal of Applied Physics
2008 | Journal article
DOI: 10.1063/1.2829815
WOSUID:

WOS:000252890700114
Contributors: Mok, K. R. C.; Benistant, F.; Jaraiz, M.; Rubio, J. E.; Castrillo, P.; Pincacho, R.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Solid-State Electronics
2008 | Journal article
DOI: 10.1016/j.sse.2008.04.027
WOSUID:

WOS:000259688300026
Contributors: Martin-Bragado, Ignacio; Avci, Ibrahim; Zographos, Nikolas; Jaraiz, Martin; Castrillo, Pedro
Source: Self-asserted source
Pedro Castrillo via ResearcherID

The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study

Ion Implantation Technology 2008
2008 | Book chapter
WOSUID:

WOS:000262960800049
Contributors: Singer, J.; Jaraiz, M.; Castrillo, P.; Laviron, C.; Cagnat, N.; Wacquant, F.; Cueto, O.; Poncet, A.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Materials Science and Engineering B-Advanced Functional Solid-State Materials
2008 | Journal article
DOI: 10.1016/j.mseb.2008.09.036
WOSUID:

WOS:000262187600056
Contributors: Castrillo, P.; Pinacho, R.; Jaraiz, M.; Rubioa, J. E.; Singer, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

Essderc 2007: Proceedings of the 37th European Solid-State Device Research Conference
2007 | Book chapter
DOI: 10.1109/essderc.2007.4430947
WOSUID:

WOS:000252831900075
Contributors: Singer, J.; Salvetti, F.; Kaeppelin, V.; Wacquant, F.; Cagnat, N.; Jaraiz, M.; Castrillo, P.; Rubio, E.; Poncet, A.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Atomistic modeling of defect diffusion in SiGe

Sispad 2007: Simulation of Semiconductor Processes and Devices 2007
2007 | Book
DOI: 10.1007/978-3-211-72861-1_2
WOSUID:

WOS:000252105600002
Contributors: Castrillo, P.; Pinacho, R.; Rubio, J. E.; Vega, L. M.; Jaraiz, M.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Current capabilities and future prospects of atomistic process simulation

2007 Ieee International Electron Devices Meeting, Vols 1 and 2
2007 | Book
DOI: 10.1109/iedm.2007.4419110
WOSUID:

WOS:000259347800218
Contributors: Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rubio, J. E.; Ieee,
Source: Self-asserted source
Pedro Castrillo via ResearcherID

From point defects to dislocation loops: a comprehensive TCAD model for self-interstitial defects in silicon

Essderc 2007: Proceedings of the 37th European Solid-State Device Research Conference
2007 | Book chapter
DOI: 10.1109/essderc.2007.4430946
WOSUID:

WOS:000252831900074
Contributors: Martin-Bragado, Ignacio; Avci, Ibrahim; Zographos, Nikolas; Castrillo, Pedro; Jaraiz, Martin
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

Doping Engineering for Device Fabrication
2006 | Book chapter
WOSUID:

WOS:000242535800014
Contributors: Mok, K. R. C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J. E.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.; Martin-Bragado, I.; Hamilton, J. J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
2006 | Journal article
DOI: 10.1016/j.nimb.2006.10.035
WOSUID:

WOS:000243178600015
Contributors: Martin-Bragado, Ignacio; Tian, S.; Johnson, M.; Castrillo, P.; Pinacho, R.; Rubio, J.; Jaraiz, M.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Bimodal distribution of damage morphology generated by ion implantation

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2005 | Journal article
DOI: 10.1016/j.mseb.2005.08.099
WOSUID:

WOS:000233895800080
Contributors: Mok, K. R. C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J. E.; Castrillo, P.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Comprehensive modeling of ion-implant amorphization in silicon

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2005 | Journal article
DOI: 10.1016/j.mseb.2005.08.026
WOSUID:

WOS:000233895800078
Contributors: Mok, K. R. C.; Jaraiz, M.; Martin-Bragadoa, I.; Rubio, J. E.; Castrillo, P.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2005 | Journal article
DOI: 10.1016/j.mseb.2005.08.030
WOSUID:

WOS:000233895800081
Contributors: Rubio, J. E.; Jaraiz, M.; Martin-Bragado, I.; Castrillo, P.; Pinacho, R.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

Journal of Applied Physics
2005 | Journal article
DOI: 10.1063/1.2041847
WOSUID:

WOS:000231885600033
Contributors: Martin-Bragado, I.; Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E.; Barbolla, J.; Moroz, V.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal of Applied Physics
2005 | Journal article
DOI: 10.1063/1.2014940
WOSUID:

WOS:000231551700127
Contributors: Mok, K. R. C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J. E.; Castrillo, P.; Pinacho, R.; Barbolla, J.; Srinivasan, M. P.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2005 | Journal article
DOI: 10.1016/j.mseb.2005.08.100
WOSUID:

WOS:000233895800079
Contributors: Mok, K. R. C.; Jaraiz, A.; Martin-Bragado, I.; Rubio, J. E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.; Benistant, F.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Applied Physics Letters
2005 | Journal article
DOI: 10.1063/1.1948533
WOSUID:

WOS:000229858300025
Contributors: Pinacho, R.; Jaraiz, M.; Castrillo, P.; Martin-Bragado, I.; Rubio, J. E.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

Physical Review B
2005 | Journal article
DOI: 10.1103/PhysRevB.71.085204
WOSUID:

WOS:000228065300039
Contributors: Marques, L. A.; Pelaz, L.; Castrillo, P.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

Physical Review B
2005 | Journal article
DOI: 10.1103/PhysRevB.72.035202
WOSUID:

WOS:000230890200084
Contributors: Martin-Bragado, I.; Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Physically based modeling of dislocation loops in ion implantation processing in silicon

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2005 | Journal article
DOI: 10.1016/j.mseb.2005.08.119
WOSUID:

WOS:000233895800084
Contributors: Castrillo, P.; Martin-Bragado, I.; Pinacho, R.; Jaraiz, M.; Rubio, J. E.; Mok, K. R. C.; Miguel-Herrero, F. J.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2004 | Journal article
DOI: 10.1016/j.mseb.2004.07.060
WOSUID:

WOS:000226016400065
Contributors: Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rubio, J. E.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Comprehensive, physically based modelling of As in Si

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2004 | Journal article
DOI: 10.1016/j.mseb.2004.07.026
WOSUID:

WOS:000226016400025
Contributors: Pinacho, R.; Jaraiz, M.; Castrillo, P.; Rubio, J. E.; Martin-Bragado, I.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Applied Physics Letters
2004 | Journal article
DOI: 10.1063/1.1762696
WOSUID:

WOS:000221793600042
Contributors: Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rubio, J. E.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Physical modeling of Fermi-level effects for decanano device process simulations

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2004 | Journal article
DOI: 10.1016/j.mseb.2004.07.042
WOSUID:

WOS:000226016400053
Contributors: Martin-Bragado, I.; Pinacho, R.; Castrillo, P.; Jaraiz, A.; Rubio, J. E.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Materials Science and Engineering B-Solid State Materials for Advanced Technology
2004 | Journal article
DOI: 10.1016/j.mseb.2004.07.039
WOSUID:

WOS:000226016400027
Contributors: Rubio, J. E.; Jaraiz, M.; Martin-Bragado, I.; Pinacho, R.; Castrillo, P.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

Physical Review B
2003 | Journal article
DOI: 10.1103/PhysRevB.68.195204
WOSUID:

WOS:000187163000062
Contributors: Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Barbolla, J.; De Souza, M. M.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Journal of Applied Physics
2002 | Journal article
DOI: 10.1063/1.1489715
WOSUID:

WOS:000176907700066
Contributors: Pinacho, R.; Castrillo, P.; Jaraiz, M.; Martin-Bragado, I.; Barbolla, J.; Gossmann, H. J.; Gilmer, G. H.; Benton, J. L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication

Simulation of Semiconductor Processes and Devices 2001
2001 | Book
WOSUID:

WOS:000172900500002
Contributors: Jaraiz, M.; Castrillo, P.; Pinacho, R.; Martin-Bragado, I.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Photoluminescence polarization of single InP quantum dots

Physical Review B
2001 | Journal article
DOI: 10.1103/PhysRevB.63.233301
WOSUID:

WOS:000169459300015
Contributors: Zwiller, V.; Jarlskog, L.; Pistol, M. E.; Pryor, C.; Castrillo, P.; Seifert, W.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data

Materials Science in Semiconductor Processing
2000 | Journal article
DOI: 10.1016/s1369-8001(00)00013-5
WOSUID:

WOS:000089545600008
Contributors: Jaraiz, M.; Rubio, E.; Castrillo, P.; Pelaz, L.; Bailon, L.; Barbolla, J.; Gilmer, G. H.; Rafferty, C. S.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Random telegraph noise in photoluminescence from individual self-assembled quantum dots

Physical Review B
1999 | Journal article
DOI: 10.1103/PhysRevB.59.10725
WOSUID:

WOS:000080114800052
Contributors: Pistol, M. E.; Castrillo, P.; Hessman, D.; Prieto, J. A.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Growth and characterization of (InSb)(m)(InP)(n) short period superlattices

Applied Physics Letters
1997 | Journal article
DOI: 10.1063/1.118735
WOSUID:

WOS:A1997XB50100030
Contributors: Utzmeier, T.; Armelles, G.; Postigo, P. A.; Briones, F.; Castrillo, P.; SanzHervas, A.; Aguilar, M.; Abril, E. J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

Applied Physics Letters
1997 | Journal article
DOI: 10.1063/1.119891
WOSUID:

WOS:A1997XU88900024
Contributors: Castrillo, P.; Armelles, G.; Silveira, J. P.; Briones, F.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Optical studies of GaAs quantum wells strained to GaP

Applied Physics Letters
1997 | Journal article
DOI: 10.1063/1.119198
WOSUID:

WOS:A1997XH23100041
Contributors: Prieto, J. A.; Armelles, G.; Pistol, M. E.; Castrillo, P.; Silveira, J. P.; Briones, F.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Spectroscopy, imaging and switching behaviour of individual InP/GaInP quantum dots

Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
1997 | Journal article
DOI: 10.1143/jjap.36.4188
WOSUID:

WOS:000073628300091
Contributors: Castrillo, P.; Hessman, D.; Pistol, M. E.; Prieto, J. A.; Pryor, C.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Band-filling in InP dots: Single dot spectroscopy and carrier dynamics

Solid-State Electronics
1996 | Journal article
DOI: 10.1016/0038-1101(95)00328-2
WOSUID:

WOS:A1996UN20700075
Contributors: Pistol, M. E.; Castrillo, P.; Hessman, D.; Anand, S.; Carlsson, N.; Seifert, W.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Consequences of interface corrugation on the lattice dynamics and Raman spectra in high-index AlAs/GaAs superlattices

Solid-State Electronics
1996 | Journal article
DOI: 10.1016/0038-1101(96)84616-8
WOSUID:

WOS:A1996UN20700037
Contributors: Castrillo, P.; Armelles, G.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Excited states of individual quantum dots studied by photoluminescence spectroscopy

Applied Physics Letters
1996 | Journal article
DOI: 10.1063/1.117879
WOSUID:

WOS:A1996VA29200011
Contributors: Hessman, D.; Castrillo, P.; Pistol, M. E.; Pryor, C.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

In-situ grown dots of InP on GaAs and GaInP - A comparison

1996 Eighth International Conference on Indium Phosphide and Related Materials
1996 | Book
WOSUID:

WOS:A1996BF52F00199
Contributors: Seifert, W.; Carlsson, N.; Castrillo, P.; Hessman, D.; Junno, T.; Pistol, M. E.; Samuelson, L.; Wallenberg, R.; Ieee,
Source: Self-asserted source
Pedro Castrillo via ResearcherID

Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

Solid State Communications
1996 | Journal article
DOI: 10.1016/0038-1098(96)00065-8
WOSUID:

WOS:A1996UC21500009
Contributors: Castrillo, P.; Armelles, G.; Barbolla, J.
Source: Self-asserted source
Pedro Castrillo via ResearcherID

BAND FILLING AT LOW OPTICAL POWER-DENSITY IN SEMICONDUCTOR DOTS

Applied Physics Letters
1995 | Journal article
DOI: 10.1063/1.114372
WOSUID:

WOS:A1995RW22500038
Contributors: Castrillo, P.; Hessman, D.; Pistol, M. E.; Anand, S.; Carlsson, N.; Seifert, W.; Samuelson, L.
Source: Self-asserted source
Pedro Castrillo via ResearcherID
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