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Scopus Author ID: 55190117600

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Israel

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Employment (1)

Ben-Gurion University of the Negev: Beersheba, IL

2024-09-01 to present | Senior Lecturer (Assistant Professor) (Materials Engineering)
Employment
Source: Self-asserted source
Amnon Rothman

Education and qualifications (4)

Stanford University: Stanford, US

2021-05-18 to present | Postdoc (Chemical Engineering)
Education
Source: Self-asserted source
Amnon Rothman

Weizmann Institute of Science Faculty of Chemistry: Rehovot, IL

2015-09-01 to 2021-05-01 | PhD student (Materials and Interfaces)
Education
Source: Self-asserted source
Amnon Rothman

Ben-Gurion University of the Negev Faculty of Engineering Sciences: Negev, IL

2010 to 2012 | M.Sc (Materials Engineering)
Education
Source: Self-asserted source
Amnon Rothman

Ben-Gurion University of the Negev Faculty of Engineering Sciences: Negev, IL

2006 to 2010 | B.Sc (Materials Engineering)
Education
Source: Self-asserted source
Amnon Rothman

Works (10)

Molecular Design in Area-Selective Atomic Layer Deposition: Understanding Inhibitors and Precursors

Chemistry of Materials
2025-03-11 | Journal article
DOI: 10.1021/acs.chemmater.4c02902
Contributors: Yujin Lee; Amnon Rothman; Alexander B. Shearer; Stacey F. Bent
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Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2

Journal of Vacuum Science & Technology A
2024-09-01 | Journal article
DOI: 10.1116/6.0003775
Contributors: Amnon Rothman; Seunggi Seo; Jacob Woodruff; Hyungjun Kim; Stacey F. Bent
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Crossref

Enhanced Growth in Atomic Layer Deposition of Ruthenium Metal: The Role of Surface Diffusion and Nucleation Sites

Chemistry of Materials
2024-01-09 | Journal article
DOI: 10.1021/acs.chemmater.3c02663
Contributors: Amnon Rothman; Andreas Werbrouck; Stacey F. Bent
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Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy

ACS Nano
2022-11-22 | Journal article
DOI: 10.1021/acsnano.2c07480
Contributors: Amnon Rothman; Kristýna Bukvišová; Noya Ruth Itzhak; Ifat Kaplan-Ashiri; Anna Eden Kossoy; Xiaomeng Sui; Libor Novák; Tomáš Šikola; Miroslav Kolíbal; Ernesto Joselevich
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Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopy

Physical Review Materials
2021-06-01 | Journal article
DOI: 10.1103/PhysRevMaterials.5.L063001
Contributors: Lucas A. B. Marçal; Sandra Benter; Austin Irish; Dmitry Dzhigaev; Eitan Oksenberg; Amnon Rothman; Ella Sanders; Susanna Hammarberg; Zhaojun Zhang; Simone Sala et al.
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Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Nanomaterials
2021-03-03 | Journal article
DOI: 10.3390/nano11030624
Contributors: Amnon Rothman; Jaroslav Maniš; Vladimir Dubrovskii; Tomáš Šikola; Jindřich Mach; Ernesto Joselevich
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In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3 Perovskite Nanowires by Nanofocused Scanning X-ray Diffraction

ACS Nano
2020-11-24 | Journal article
DOI: 10.1021/acsnano.0c07426
Contributors: Lucas A. B. Marçal; Eitan Oksenberg; Dmitry Dzhigaev; Susanna Hammarberg; Amnon Rothman; Alexander Björling; Eva Unger; Anders Mikkelsen; Ernesto Joselevich; Jesper Wallentin
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Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

Nature Communications
2020-01-24 | Journal article
DOI: 10.1038/s41467-020-14365-2
Contributors: Eitan Oksenberg; Aboma Merdasa; Lothar Houben; Ifat Kaplan-Ashiri; Amnon Rothman; Ivan G. Scheblykin; Eva L. Unger; Ernesto Joselevich
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Kinetics and mechanism of planar nanowire growth

Proceedings of the National Academy of Sciences
2020-01-07 | Journal article
DOI: 10.1073/pnas.1911505116
Contributors: Amnon Rothman; Vladimir G. Dubrovskii; Ernesto Joselevich
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Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

The Journal of Physical Chemistry C
2018 | Journal article
DOI: 10.1021/acs.jpcc.8b04063
Source: Self-asserted source
Amnon Rothman
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