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ResearcherID: I-5017-2015
SciProfiles: 758890
Scopus Author ID: 57034089300

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Modeling of van der Waals-Based Photovoltaic Devices

IEEE Journal of the Electron Devices Society
2025 | Journal article
DOI: 10.1109/JEDS.2025.3542168
Contributors: Ángel A. Díaz-Burgos; Enrique G. Marin; Francisco Pasadas; Francisco G. Ruiz; Andrés Godoy
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Comprehensive analysis and exploratory design of graphene-based subharmonic mixers operating at the gigahertz band

Discover Nano
2025-03-14 | Journal article
DOI: 10.1186/s11671-025-04221-x
Contributors: M. C. Pardo; F. Pasadas; A. Medina-Rull; M. G. Palomo; S. Ortiz-Ruiz; E. G. Marin; A. Godoy; F. G. Ruiz
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Integration of 2D material-based electronic devices on flexible substrates for millimeter wave applications

2024-12-03 | Preprint
DOI: 10.21203/rs.3.rs-5397933/v1
Contributors: Max Lemme; Eros Reato; Paula Palacios; Burkay Uzlu; Eyyub Baskent; Ardeshir Esteki; Mohamed Saeed; Francisco Pasadas; Lukas Völkel; Daniel Schneider et al.
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Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

Journal of Applied Physics
2024-09-28 | Journal article
DOI: 10.1063/5.0212084
Contributors: J. Cuesta-Lopez; M. D. Ganeriwala; E. G. Marin; A. Toral-Lopez; F. Pasadas; F. G. Ruiz; A. Godoy
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A Novel Analysis of Periodic Structures Based on Loaded Transmission Lines

IEEE Journal of Microwaves
2023 | Journal article
DOI: 10.1109/JMW.2023.3263194
Contributors: Alberto Medina-Rull; Francisco Pasadas; Enrique G. Marin; Andrés Godoy; Francisco G. Ruiz
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Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

arXiv
2023 | Other
DOI: 10.48550/arXiv.2309.08282
EID:

2-s2.0-85173005574

Part of ISSN: 23318422
Contributors: Ribero-Figueroa, X.; Pacheco-Sanchez, A.; Mansouri, A.; Kumar, P.; Habibpour, O.; Zirath, H.; Sordan, R.; Pasadas, F.; Jiménez, D.; Torres-Torres, R.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3311772
Contributors: Xiomara Ribero-Figueroa; Anibal Pacheco-Sanchez; Aida Mansouri; Pankaj Kumar; Omid Habibpour; Herbert Zirath; Roman Sordan; Francisco Pasadas; David Jiménez; Reydezel Torres-Torres
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Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

arXiv
2023 | Other
DOI: 10.48550/arXiv.2309.08519
EID:

2-s2.0-85172289272

Part of ISSN: 23318422
Contributors: Pasadas, F.; Medina-Rull, A.; Ruiz, F.G.; Ramos-Silva, J.N.; Pacheco-Sanchez, A.; Pardo, M.C.; Toral-Lopez, A.; Godoy, A.; Ramírez-García, E.; Jiménez, D. et al.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Fully Integrated Flexible RF Detectors in MoS<sub>2</sub>and Graphene based MMIC

Device Research Conference - Conference Digest, DRC
2023 | Conference paper
DOI: 10.1109/DRC58590.2023.10187055
EID:

2-s2.0-85167870610

Part of ISSN: 15483770
Contributors: Palacios, P.; Reato, E.; Saeed, M.; Pasadas, F.; Wang, Z.; Lemme, M.C.; Negra, R.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Graphene field-effect transistor TCAD tool for circuit design under freeware

Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023
2023 | Conference paper
DOI: 10.1109/SMACD58065.2023.10192189
EID:

2-s2.0-85168660484
Contributors: Pasadas, F.; Pacheco-Sanchez, A.; Mavredakis, N.; Jimenez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Reconfigurable frequency multipliers based on graphene field-effect transistors

Discover Nano
2023 | Journal article
DOI: 10.1186/s11671-023-03884-8
EID:

2-s2.0-85173612753

Part of ISSN: 27319229
Contributors: Toral-Lopez, A.; Marin, E.G.; Pasadas, F.; Ganeriwala, M.D.; Ruiz, F.G.; Jiménez, D.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

Small
2023-12 | Journal article
DOI: 10.1002/smll.202303595
Contributors: Francisco Pasadas; Alberto Medina‐Rull; Francisco G. Ruiz; Javier Noe Ramos‐Silva; Anibal Pacheco‐Sanchez; Mari Carmen Pardo; Alejandro Toral‐Lopez; Andrés Godoy; Eloy Ramírez‐García; David Jiménez et al.
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Two-dimensional tellurium-based diodes for RF applications

npj 2D Materials and Applications
2023-09-27 | Journal article
DOI: 10.1038/s41699-023-00433-w
Contributors: Abdelrahman M. Askar; Paula Palacios; Francisco Pasadas; Mohamed Saeed; Mohammad Reza Mohammadzadeh; Renato Negra; Michael M. Adachi
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EXPERIMENTAL TEACHING IN MICROWAVE ELECTRONICS: THE USE OF A ROBOT FOR PROTOTYPING

2023-03 | Conference paper
DOI: 10.21125/inted.2023.1834
Contributors: Francisco Pasadas; Alberto Medina-Rull; Mikel García-Palomo; Sergio Ortiz; Mario Pantoja; Enrique G. Marin; Francisco Ruiz
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Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Advanced Electronic Materials
2023-02-28 | Journal article
DOI: 10.1002/aelm.202201083
Part of ISSN: 2199-160X
Part of ISSN: 2199-160X
Contributors: Mykola Fomin; Francisco. Pasadas; Enrique G. Marin; Alberto Medina‐Rull; Francisco. G. Ruiz; Andrés. Godoy; Ihor Zadorozhnyi; Guillermo Beltramo; Fabian Brings; Prof.Dr.S.Vitusevich et al.
Source: Self-asserted source
Francisco Pasadas
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Compact Modeling of Two-Dimensional Field-Effect Biosensors

Sensors
2023-02-07 | Journal article
DOI: 10.3390/s23041840
Contributors: Francisco Pasadas; Tarek El Grour; Enrique G. Marin; Alberto Medina-Rull; Alejandro Toral-Lopez; Juan Cuesta-Lopez; Francisco G. Ruiz; Lassaad El Mir; Andrés Godoy
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Variability Assessment of the Performance of MoS2-Based BioFETs

Chemosensors
2023-01-10 | Journal article
DOI: 10.3390/chemosensors11010057
Contributors: Juan Cuesta-Lopez; Alejandro Toral-Lopez; Enrique G. Marin; Francisco G. Ruiz; Francisco Pasadas; Alberto Medina-Rull; Andres Godoy
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Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

arXiv
2022 | Other
DOI: 10.48550/arXiv.2209.00388
EID:

2-s2.0-85138247518

Part of ISSN: 23318422
Contributors: Pasadas, F.; Feijoo, P.C.; Mavredakis, N.; Pacheco-Sanchez, A.; Chaves, F.A.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Graphene on Silicon Hybrid Field-Effect Transistors

arXiv
2022 | Other
DOI: 10.48550/arxiv.2204.09572
EID:

2-s2.0-85170909503

Part of ISSN: 23318422
Contributors: Fomin, M.; Pasadas, F.; Marin, E.G.; Medina-Rull, A.; Ruiz, F.G.; Godoy, A.; Zadorozhnyi, I.; Beltramo, G.; Brings, F.; Vitusevich, S. et al.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Microwave Models for Graphene Ambipolar Devices: an Engineering Teaching Perspective,MODELOS DE MICROONDAS PARA DISPOSITIVOS AMBIPOLARES DE GRAFENO Perspectiva de la docencia universitaria en ingeniería

TECHNO Review. International Technology, Science and Society Review / Revista Internacional de Tecnología, Ciencia y Sociedad
2022 | Journal article
DOI: 10.37467/revtechno.v11.4457
EID:

2-s2.0-85144930939

Part of ISSN: 26959933
Contributors: Pasadas, F.; Medina-Rull, A.; Marín, E.G.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Periodic structures based on two-dimensional materials: application to phase shifters

DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
2022 | Conference paper
DOI: 10.1109/DCIS55711.2022.9970016
EID:

2-s2.0-85145440242
Contributors: Medina-Rull, A.; Pasadas, F.; Pardo, M.C.; Toral-Lopez, A.; Marin, E.G.; Godoy, A.; Ruiz, F.G.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

Advanced Materials
2022-12 | Journal article
DOI: 10.1002/adma.202201691
Contributors: Francisco Pasadas; Pedro C. Feijoo; Nikolaos Mavredakis; Aníbal Pacheco‐Sanchez; Ferney A. Chaves; David Jiménez
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AMBIPOLAR RADIOFREQUENCY APPLICATIONS FOR THE NEXT GENERATION OF MICROWAVE ENGINEERS

2022-11 | Conference paper
DOI: 10.21125/iceri.2022.1324
Contributors: Francisco Pasadas; Alberto Medina-Rull; Alejandro Toral-Lopez; Francisco G. Ruiz; Andrés Godoy; Enrique G. Marin
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

arXiv
2021 | Other
DOI: 10.48550/arxiv.2103.06378
EID:

2-s2.0-85169190569

Part of ISSN: 23318422
Contributors: Rull, A.M.; Pasadas, F.; Marin, E.G.; Toral-Lopez, A.; Cuesta, J.; Godoy, A.; Jiménez, D.; Ruiz, F.G.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Compact modeling of pH-Sensitive FETs based on two-dimensional semiconductors

arXiv
2021 | Other
DOI: 10.48550/arxiv.2109.06585
EID:

2-s2.0-85170880251

Part of ISSN: 23318422
Contributors: El Grour, T.; Pasadas, F.; Medina-Rull, A.; Najari, M.; Marin, E.G.; Toral-Lopez, A.; Ruiz, F.G.; Godoy, A.; Jiménez, D.; El-Mir, L.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

2021 Silicon Nanoelectronics Workshop, SNW 2021
2021 | Conference paper
DOI: 10.1109/SNW51795.2021.00038
EID:

2-s2.0-85124889496
Contributors: Toral-Lopez, A.; Schneider, D.S.; Reato, E.; Marin, E.G.; Pasadas, F.; Wang, Z.; Lemme, M.C.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

arXiv
2021 | Other
EID:

2-s2.0-85104197397

Part of ISSN: 23318422
Contributors: Toral-Lopez, A.; Pasadas, F.; Marin, E.G.; Medina-Rull, A.; Gonzalez-Medina, J.M.; Ruiz, F.G.; Jimenez, D.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Nanoscale Advances
2021 | Journal article
DOI: 10.1039/D0NA00953A
Contributors: A. Toral-Lopez; F. Pasadas; E. G. Marin; A. Medina-Rull; J. M. Gonzalez-Medina; F. G. Ruiz; D. Jiménez; A. Godoy
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Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

Mathematics and Computers in Simulation
2021 | Journal article
DOI: 10.1016/j.matcom.2020.06.005
EID:

2-s2.0-85086391124

Part of ISSN: 03784754
Contributors: Spinelli, G.; Lamberti, P.; Tucci, V.; Pasadas, F.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Tolerance analysis of a GFET transistor for aerospace and aeronautical application

IOP Conference Series: Materials Science and Engineering
2021 | Conference paper
DOI: 10.1088/1757-899X/1024/1/012005
EID:

2-s2.0-85100786325

Part of ISSN: 1757899X 17578981
Contributors: Lamberti, P.; la Mura, M.; Pasadas, F.; Jiménez, D.; Tucci, V.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications

arXiv
2021 | Other
EID:

2-s2.0-85108104234

Part of ISSN: 23318422
Contributors: Pasadas, F.; Medina-Rull, A.; Feijoo, P.C.; Pacheco-Sanchez, A.; Marin, E.G.; Ruiz, F.G.; Rodriguez, N.; Godoy, A.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

IEEE Transactions on Electron Devices
2021-11 | Journal article
DOI: 10.1109/TED.2021.3112407
Contributors: Tarek El Grour; Francisco Pasadas; Alberto Medina-Rull; Montassar Najari; Enrique G. Marin; Alejandro Toral-Lopez; Francisco G. Ruiz; Andres Godoy; David Jimenez; Lassaad El Mir
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

Nano Express
2021-09-01 | Journal article
DOI: 10.1088/2632-959X/abfdd0
Contributors: Francisco Pasadas; Alberto Medina-Rull; Pedro Carlos Feijoo; Anibal Pacheco-Sanchez; Enrique G. Marin; Francisco G. Ruiz; Noel Rodriguez; Andrés Godoy; David Jiménez
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.3038153
Contributors: Alberto Medina-Rull; Francisco Pasadas; Enrique G. Marin; Alejandro Toral-Lopez; Juan Cuesta; Andres Godoy; David Jimenez; Francisco G. Ruiz
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Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Nanoscale Advances
2020 | Journal article
DOI: 10.1039/C9NA00733D
Contributors: Pedro C. Feijoo; Francisco Pasadas; Marlene Bonmann; Muhammad Asad; Xinxin Yang; Andrey Generalov; Andrei Vorobiev; Luca Banszerus; Christoph Stampfer; Martin Otto et al.
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Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances

arXiv
2020 | Other
DOI: 10.48550/arxiv.2002.01499
EID:

2-s2.0-85171102590

Part of ISSN: 23318422
Contributors: Pasadas, F.; Marin, E.G.; Toral-Lopez, A.; Ruiz, F.G.; Akinwande, A.G.D.; Jiménez, D.; Park, S.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Numerical study of surface chemical reactions in 2D-FET based pH sensors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2020 | Conference paper
DOI: 10.23919/SISPAD49475.2020.9241667
EID:

2-s2.0-85096243635
Contributors: Toral-Lopez, A.; Marin, E.G.; Cuesta, J.; Ruiz, F.G.; Pasadas, F.; Medina-Rull, A.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Sensitivity analysis of a graphene field-effect transistors by means of design of experiments

arXiv
2020 | Other
DOI: 10.48550/arxiv.2009.07582
EID:

2-s2.0-85171319710

Part of ISSN: 23318422
Contributors: Spinelli, G.; Lamberti, P.; Tucci, V.; Pasadas, F.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE Transactions on Electron Devices
2020-05 | Journal article
DOI: 10.1109/TED.2020.2982840
Contributors: Francisco Pasadas; David Jimenez
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Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2019 | Conference paper
DOI: 10.1109/SISPAD.2019.8870562
EID:

2-s2.0-85074323404
Contributors: Toral-Lopez, A.; Pasadas, F.; Marin, E.G.; Medina-Rull, A.; Ruiz, F.J.G.; Jimenez, D.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Does carrier velocity saturation help to enhance f<sub>max</sub> in graphene field‐effect transistors?

arXiv
2019 | Other
DOI: 10.48550/arxiv.1910.08304
EID:

2-s2.0-85170991374

Part of ISSN: 23318422
Contributors: Feijoo, P.C.; Pasadas, F.; Bonmann, M.; Asad, M.; Yang, X.; Generalov, A.; Vorobiev, A.; Banszerus, L.; Stampfer, C.; Otto, M. et al.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

GFET Asymmetric Transfer Response Analysis through Access Region Resistances

arXiv
2019 | Other
DOI: 10.48550/arxiv.1911.06360
EID:

2-s2.0-85171111500

Part of ISSN: 23318422
Contributors: Toral-Lopez, A.; Marin, E.G.; Pasadas, F.; Gonzalez-Medina, J.M.; Ruiz, F.G.; Jiménez, D.; Godoy, A.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Large-signal model of the Metal-InsulatorGraphene diode targeting RF applications

arXiv
2019 | Other
DOI: 10.48550/arxiv.1904.05792
EID:

2-s2.0-85169199492

Part of ISSN: 23318422
Contributors: Pasadas, F.; Saeed, M.; Hamed, A.; Wang, Z.; Negra, R.; Neumaier, D.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

npj 2D Materials and Applications
2019-12-04 | Journal article
DOI: 10.1038/s41699-019-0130-6
Contributors: Francisco Pasadas; Enrique G. Marin; Alejandro Toral-Lopez; Francisco G. Ruiz; Andrés Godoy; Saungeun Park; Deji Akinwande; David Jiménez
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GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Nanomaterials
2019-07-18 | Journal article
DOI: 10.3390/nano9071027
Contributors: Alejandro Toral-Lopez; Enrique G. Marin; Francisco Pasadas; Jose Maria Gonzalez-Medina; Francisco G. Ruiz; David Jiménez; Andres Godoy
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Large-Signal Model of the Metal–Insulator–Graphene Diode Targeting RF Applications

IEEE Electron Device Letters
2019-06 | Journal article
DOI: 10.1109/LED.2019.2911116
Contributors: Francisco Pasadas; Mohamed Saeed; Ahmed Hamed; Zhenxing Wang; Renato Negra; Daniel Neumaier; David Jimenez
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Erratum to “Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances” [Jul 16 2936-2941]

IEEE Transactions on Electron Devices
2019-05 | Journal article
DOI: 10.1109/TED.2019.2902617
Contributors: Francisco Pasadas; David Jimenez
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Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors

IEEE Transactions on Electron Devices
2019-03 | Journal article
DOI: 10.1109/TED.2018.2890192
Contributors: Pedro C. Feijoo; Francisco Pasadas; Jose M. Iglesias; El Mokhtar Hamham; Raul Rengel; David Jimenez
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Radio frequency performance projection and stability trade-off of h-BN encapsulated Graphene field-effect transistors

arXiv
2018 | Other
DOI: 10.48550/arxiv.1805.07138
EID:

2-s2.0-85169486549

Part of ISSN: 23318422
Contributors: Feijoo, P.C.; Pasadas, F.; Iglesias, J.M.; Hamham, E.M.; Rengel, R.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

arXiv
2017 | Other
DOI: 10.48550/arxiv.1705.00542
EID:

2-s2.0-85169965287

Part of ISSN: 23318422
Contributors: Feijoo, P.C.; Pasadas, F.; Iglesias, J.M.; Martín, M.J.; Rengel, R.; Li, C.; Kim, W.; Riikonen, J.; Lipsanen, H.; Jiménez, D.
Source: Self-asserted source
Francisco Pasadas via Scopus - Elsevier
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Peer review (7 reviews for 6 publications/grants)

Review activity for ACS applied materials & interfaces. (1)
Review activity for ACS applied nano materials. (1)
Review activity for Advanced electronic materials (2)
Review activity for Microelectronic engineering. (1)
Review activity for Micromachines. (1)
Review activity for npj 2D materials and applications. (1)
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