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China

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Employment (1)

Hunan University: Changsha, CN

2023-06-20 to 2028-07-31
Employment
Source: Self-asserted source
Pinghui Mo

Works (9)

DeePMD-kit v2: A software package for deep potential models

The Journal of Chemical Physics
2023-08-07 | Journal article
Contributors: Jinzhe Zeng; Duo Zhang; Denghui Lu; Pinghui Mo; Zeyu Li; Yixiao Chen; Marián Rynik; Li’ang Huang; Ziyao Li; Shaochen Shi et al.
Source: check_circle
Crossref

A Heterogeneous Parallel Non-von Neumann Architecture System for Accurate and Efficient Machine Learning Molecular Dynamics

IEEE Transactions on Circuits and Systems I: Regular Papers
2023-06 | Journal article
Part of ISSN: 1549-8328
Part of ISSN: 1558-0806
Contributors: zhuoying zhao; Ziling Tan; Pinghui Mo; Xiaonan Wang; Dan Zhao; Zhang Xin; Ming Tao; Wenze Yao
Source: Self-asserted source
Pinghui Mo

Accurate and efficient molecular dynamics based on machine learning and non von Neumann architecture

npj Computational Materials
2022-05-09 | Journal article
Part of ISSN: 2057-3960
Contributors: Pinghui Mo; Chang Li; Dan Zhao; Yujia Zhang; Mengchao Shi; Junhua Li; Jie Liu
Source: Self-asserted source
Pinghui Mo

Transfer Learning of Potential Energy Surfaces for Efficient Atomistic Modeling of Doping and Alloy

IEEE Electron Device Letters
2020-04 | Journal article
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Contributors: Pinghui Mo; Mengchao Shi; Wenze Yao; Jie Liu
Source: Self-asserted source
Pinghui Mo

Deep Neural Network for Accurate and Efficient Atomistic Modeling of Phase Change Memory

IEEE Electron Device Letters
2020-03 | Journal article
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Contributors: Mengchao Shi; Pinghui Mo; Jie Liu
Source: Self-asserted source
Pinghui Mo

Strain-enhanced electron mobility and mobility anisotropy in a two-dimensional vanadium diselenide monolayer

Journal of Applied Physics
2019-07-28 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Mengchao Shi; Pinghui Mo; Jiwu Lu; Jie Liu
Source: Self-asserted source
Pinghui Mo

Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes

Journal of Computational Electronics
2018-12 | Journal article
Part of ISSN: 1569-8025
Part of ISSN: 1572-8137
Contributors: Jie Liu; Chuanxiang Tang; Pinghui Mo; Jiwu Lu
Source: Self-asserted source
Pinghui Mo

Multi-scale analysis of strain-dependent magnetocrystalline anisotropy and strain-induced Villari and Nagaoka-Honda effects in a two-dimensional ferromagnetic chromium tri-iodide monolayer

Journal of Applied Physics
2018-07-28 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Jie Liu; Pinghui Mo; Mengchao Shi; Dan Gao; Jiwu Lu
Source: Self-asserted source
Pinghui Mo

Electrical-field-induced magnetic Skyrmion ground state in a two-dimensional chromium tri-iodide ferromagnetic monolayer

AIP Advances
2018-05 | Journal article
Part of ISSN: 2158-3226
Contributors: Jie Liu; Mengchao Shi; Pinghui Mo; Jiwu Lu
Source: Self-asserted source
Pinghui Mo