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Scopus Author ID: 37036414300

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Works (3)

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

physica status solidi (a)
2019-05 | Journal article
DOI: 10.1002/pssa.201800617
Contributors: Alexander S. Gudovskikh; Alexander V. Uvarov; Ivan A. Morozov; Artem I. Baranov; Dmitry A. Kudryashov; Kirill S. Zelentsov; Alexandre Jaffré; Sylvain Le Gall; Arouna Darga; Aurore Brezard‐Oudot et al.
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Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Journal of Applied Physics
2018-04-28 | Journal article
DOI: 10.1063/1.5011371
Contributors: Artem I. Baranov; Alexander S. Gudovskikh; Dmitry A. Kudryashov; Alexandra A. Lazarenko; Ivan A. Morozov; Alexey M. Mozharov; Ekaterina V. Nikitina; Evgeny V. Pirogov; Maxim S. Sobolev; Kirill S. Zelentsov et al.
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Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Journal of Renewable and Sustainable Energy
2018-03 | Journal article
DOI: 10.1063/1.5000256
Contributors: A. S. Gudovskikh; A. V. Uvarov; I. A. Morozov; A. I. Baranov; D. A. Kudryashov; E. V. Nikitina; A. A. Bukatin; K. S. Zelentsov; I. S. Mukhin; A. Levtchenko et al.
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