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Works (8)

GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2023.3321562
Contributors: Kai Fu; Shisong Luo; Houqiang Fu; Kevin Hatch; Shanthan Reddy Alugubelli; Hanxiao Liu; Tao Li; Mingfei Xu; Zhaobo Mei; Ziyi He et al.
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Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Applied Physics Letters
2024-07-22 | Journal article
DOI: 10.1063/5.0217630
Contributors: Ziyi He; Xiang Zhang; Tymofii S. Pieshkov; Ali Ebadi Yekta; Tanguy Terlier; Dinusha Herath Mudiyanselage; Dawei Wang; Bingcheng Da; Mingfei Xu; Shisong Luo et al.
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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied Physics Letters
2024-05-13 | Journal article
DOI: 10.1063/5.0191297
Contributors: John Niroula; Qingyun Xie; Nitul S. Rajput; Patrick K. Darmawi-Iskandar; Sheikh Ifatur Rahman; Shisong Luo; Rafid Hassan Palash; Bejoy Sikder; Mengyang Yuan; Pradyot Yadav et al.
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Modulation of dielectric properties of hexagonal/cubic boron nitride composites

Applied Physics Letters
2024-05-06 | Journal article
DOI: 10.1063/5.0210915
Contributors: Mingfei Xu; Ziyi He; Abhijit Biswas; Shisong Luo; Tao Li; Cheng Chang; Chenxi Li; Bin Gao; Robert Vajtai; Pengcheng Dai et al.
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Applied Physics Letters
2024-04-22 | Journal article
DOI: 10.1063/5.0186976
Contributors: Qingyun Xie; John Niroula; Nitul S. Rajput; Mengyang Yuan; Shisong Luo; Kai Fu; Mohamed Fadil Isamotu; Rafid Hassan Palash; Bejoy Sikder; Savannah R. Eisner et al.
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Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3279813
Contributors: Mengyang Yuan; John Niroula; Qingyun Xie; Nitul S. Rajput; Kai Fu; Shisong Luo; Sagar Kumar Das; Abdullah Jubair Bin Iqbal; Bejoy Sikder; Mohamed Fadil Isamotu et al.
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Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments

Applied Physics Letters
2023-12-11 | Journal article
DOI: 10.1063/5.0173535
Contributors: Shisong Luo; Kai Fu; Qingyun Xie; Mengyang Yuan; Guanhui Gao; Hua Guo; Rui Xu; Noah Giles; Tao Li; Zhaobo Mei et al.
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Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

Applied Physics Letters
2023-12-04 | Journal article
DOI: 10.1063/5.0176578
Contributors: Mingfei Xu; Abhijit Biswas; Tao Li; Ziyi He; Shisong Luo; Zhaobo Mei; Jingan Zhou; Cheng Chang; Anand B. Puthirath; Robert Vajtai et al.
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Peer review (4 reviews for 2 publications/grants)

Review activity for Applied physics letters. (2)
Review activity for Journal of applied physics. (2)
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