Personal information

GaN, reliability

Activities

Employment (2)

Texas Instruments: Dallas, TX, US

2011-02 to present
Employment
Source: Self-asserted source
Jungwoo Joh

Massachusetts Institute of Technology: Cambridge, MA, US

2009-09 to 2011-02 | Postdoctoral Associate (Microsystems Technology Laboratories)
Employment
Source: Self-asserted source
Jungwoo Joh

Education and qualifications (2)

Massachusetts Institute of Technology: Cambridge, MA, US

2007-02 to 2009-09 | PhD (EECS)
Education
Source: Self-asserted source
Jungwoo Joh

Massachusetts Institute of Technology: Cambridge, MA, US

2005-09 to 2007-02 | SM (EECS)
Education
Source: Self-asserted source
Jungwoo Joh

Works (2)

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied Physics Letters
2022-02-21 | Journal article
Contributors: Ethan S. Lee; Jungwoo Joh; Dong Seup Lee; Jesús A. del Alamo
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Crossref

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE Transactions on Electron Devices
2019-02 | Journal article
Contributors: Wenyuan Sun; Jungwoo Joh; Srikanth Krishnan; Sameer Pendharkar; Christine M. Jackson; Steven A. Ringel; Aaron R. Arehart
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Crossref