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Works (37)

In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3435177
Contributors: Yuanquan Huang; Hongye Yuan; Tiancheng Gong; Yuan Wang; Pengfei Jiang; Wei Wei; Yang Yang; Junshuai Chai; Zhicheng Wu; Xiaolei Wang et al.
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Crossref

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3409203
Contributors: Saifei Dai; Songwei Li; Shuangshuang Xu; Fengbin Tian; Junshuai Chai; Jiahui Duan; Wenjuan Xiong; Jinjuan Xiang; Kai Han; Yanrong Wang et al.
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Crossref

Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al2O3/Hf0.5Zr0.5O2/Bottom Interlayer/Si Substrate Structure

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3473889
Contributors: Jia Yang; Runhao Han; Tao Hu; Saifei Dai; Xianzhou Shao; Xiaoqing Sun; Junshuai Chai; Hao Xu; Kai Han; Yanrong Wang et al.
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Crossref

Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si Gate-Stacks

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3479159
Contributors: Xianzhou Shao; Junshuai Chai; Fengbin Tian; Xiaoyu Ke; Min Liao; Saifei Dai; Hongyang Fan; Xiaoqing Sun; Hao Xu; Kai Han et al.
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Crossref

Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3489595
Contributors: Runhao Han; Tao Hu; Jia Yang; Mingkai Bai; Yajing Ding; Xianzhou Shao; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu et al.
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Crossref

Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform

IEEE Electron Device Letters
2024-12 | Journal article
DOI: 10.1109/LED.2024.3469372
Contributors: Hongye Yuan; Yuanquan Huang; Tiancheng Gong; Yuan Wang; Pengfei Jiang; Wei Wei; Yang Yang; Junshuai Chai; Zhicheng Wu; Xiaolei Wang et al.
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Crossref

Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

IEEE Transactions on Electron Devices
2024-10 | Journal article
DOI: 10.1109/TED.2024.3446753
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
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Crossref

Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

IEEE Transactions on Electron Devices
2024-08 | Journal article
DOI: 10.1109/TED.2024.3418372
Contributors: Saifei Dai; Junshuai Chai; Jiahui Duan; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Jing Zhang; Xiaolei Wang; Wenwu Wang
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Crossref

A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

IEEE Electron Device Letters
2024-07 | Journal article
DOI: 10.1109/LED.2024.3395024
Contributors: Shujing Zhao; Chuan Yu Han; Fengbin Tian; Yubin Yuan; Junshuai Chai; Hao Xu; Shiquan Fan; Xin Li; Weihua Liu; Can Li et al.
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Crossref

Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses

IEEE Transactions on Electron Devices
2024-06 | Journal article
DOI: 10.1109/TED.2024.3393935
Contributors: Xiaoyu Ke; Junshuai Chai; Xianzhou Shao; Jiahui Duan; Xiaoqing Sun; Shuai Yang; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu et al.
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Crossref

Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

AIP Advances
2024-06-01 | Journal article
DOI: 10.1063/5.0208941
Contributors: Xiaoyu Ke; Saifei Dai; Hao Xu; Junshuai Chai; Kai Han; Xiaolei Wang; Wenwu Wang
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Crossref

Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2024.3351599
Contributors: Xinpei Jia; Junshuai Chai; Jiahui Duan; Xiaoqing Sun; Xianzhou Shao; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang et al.
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Crossref

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Applied Physics Letters
2024-03-25 | Journal article
DOI: 10.1063/5.0196442
Contributors: Yuanquan Huang; Hongye Yuan; Bowen Nie; Tiancheng Gong; Yuan Wang; Shuxian Lv; Pengfei Jiang; Wei Wei; Yang Yang; Junshuai Chai et al.
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Crossref

The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor

Applied Physics Letters
2024-03-04 | Journal article
DOI: 10.1063/5.0195170
Contributors: Xiaoyu Ke; Saifei Dai; Hao Xu; Junshuai Chai; Xiaolei Wang; Wenwu Wang
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Crossref

Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

IEEE Transactions on Electron Devices
2024-02 | Journal article
DOI: 10.1109/TED.2023.3341905
Contributors: Fengbin Tian; Xiaoqing Sun; Songwei Li; Shuangshuang Xu; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Jing Zhang et al.
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Crossref

A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3297563
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
Source: check_circle
Crossref

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3297082
Contributors: Xiaoqing Sun; Junshuai Chai; Fengbin Tian; Shujing Zhao; Jiahui Duan; Jinjuan Xiang; Kai Han; Hao Xu; Xiaolei Wang; Wenwu Wang
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Crossref

Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3268152
Contributors: Mingfeng Tang; Junyao Mei; Xuepeng Zhan; Chengcheng Wang; Junshuai Chai; Hao Xu; Xiaolei Wang; Jixuan Wu; Jiezhi Chen
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Crossref

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3285715
Contributors: Min Liao; Hao Xu; Jiahui Duan; Shujing Zhao; Fengbin Tian; Junshuai Chai; Kai Han; Yibo Jiang; Jinjuan Xiang; Wenwu Wang et al.
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Crossref

Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses

Journal of Applied Physics
2023-11-07 | Journal article
DOI: 10.1063/5.0170657
Contributors: Mingkai Bai; Peizhen Hong; Runhao Han; Junshuai Chai; Bao Zhang; Jingwen Hou; Wenjuan Xiong; Shuai Yang; Jianfeng Gao; Feng Luo et al.
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Crossref

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement

IEEE Transactions on Electron Devices
2023-06 | Journal article
DOI: 10.1109/TED.2023.3265913
Contributors: Xianzhou Shao; Junshuai Chai; Fengbin Tian; Shujing Zhao; Jiahui Duan; Xiaoyu Ke; Xiaoqing Sun; Jinjuan Xiang; Kai Han; Yanrong Wang et al.
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Crossref

Nonlinear Absorption Response of Zirconium Carbide Films

ACS Applied Materials & Interfaces
2023-01-18 | Journal article
DOI: 10.1021/acsami.2c18652
Contributors: Jiang Wang; Guangying Li; Sicong Liu; Junshuai Chai; Yonggang Wang; Guanghua Cheng; Guodong Zhang; Yuanshan Liu; Xuelong Li
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Crossref

Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing

IEEE Transactions on Nanotechnology
2022 | Journal article
DOI: 10.1109/TNANO.2022.3223183
Contributors: Guoqing Zhao; Shuhao Wu; Xuepeng Zhan; Mingfeng Tang; Wei Wei; Lu Tai; Jixuan Wu; Junshuai Chai; Hao Xu; Xiaolei Wang et al.
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Crossref

Structural, magnetic, and electronic properties of EuSi2 thin films on the Si(111) surface

Physical Chemistry Chemical Physics
2022 | Journal article
DOI: 10.1039/D1CP05913K
Contributors: Guang Yang; Jun-Shuai Chai; Kun Bu; Li-Fang Xu; Jian-Tao Wang
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Crossref

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf0.5Zr0.5O2/SiO x Interface to Suppress Oxygen Vacancy Generation

IEEE Transactions on Electron Devices
2022-12 | Journal article
DOI: 10.1109/TED.2022.3217997
Contributors: Junshuai Chai; Hao Xu; Jinjuan Xiang; Yuanyuan Zhang; Shujing Zhao; Fengbin Tian; Jiahui Duan; Kai Han; Xiaolei Wang; Jun Luo et al.
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Crossref

A Compact Fully Ferroelectric-FETs Reservoir Computing Network With Sub-100 ns Operating Speed

IEEE Electron Device Letters
2022-09 | Journal article
DOI: 10.1109/LED.2022.3188496
Contributors: Mingfeng Tang; Xuepeng Zhan; Shuhao Wu; Maoying Bai; Yang Feng; Guoqing Zhao; Jixuan Wu; Junshuai Chai; Hao Xu; Xiaolei Wang et al.
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Crossref

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack

Journal of Applied Physics
2022-09-14 | Journal article
DOI: 10.1063/5.0106750
Contributors: Junshuai Chai; Hao Xu; Jinjuan Xiang; Yuanyuan Zhang; Lixing Zhou; Shujing Zhao; Fengbin Tian; Jiahui Duan; Kai Han; Xiaolei Wang et al.
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Crossref

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

IEEE Transactions on Electron Devices
2022-03 | Journal article
DOI: 10.1109/TED.2021.3139285
Contributors: Shujing Zhao; Fengbin Tian; Hao Xu; Jinjuan Xiang; Tingting Li; Junshuai Chai; Jiahui Duan; Kai Han; Xiaolei Wang; Wenwu Wang et al.
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Crossref

La induced Si3 trimer bilayer on the Si(111) surface

Physical Chemistry Chemical Physics
2021 | Journal article
DOI: 10.1039/D1CP01351C
Contributors: Jun-Shuai Chai; Guang Yang; Jing Xu; Wen-Wu Wang; Li-Fang Xu; Jian-Tao Wang
Source: check_circle
Crossref

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure

IEEE Transactions on Electron Devices
2021-11 | Journal article
DOI: 10.1109/TED.2021.3114663
Contributors: Fengbin Tian; Shujing Zhao; Hao Xu; Jinjuan Xiang; Tingting Li; Wenjuan Xiong; Jiahui Duan; Junshuai Chai; Kai Han; Xiaolei Wang et al.
Source: check_circle
Crossref

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

Physics Letters A
2020-07 | Journal article
DOI: 10.1016/j.physleta.2020.126540
Part of ISSN: 0375-9601
Source: Self-asserted source
Jun-Shuai Chai

Structural and electronic properties of BaSi2(100) thin film on Si(111) substrate

Journal of Materials Science
2020-05-09 | Journal article
DOI: 10.1007/s10853-020-04685-5
Part of ISSN: 0022-2461
Part of ISSN: 1573-4803
Source: Self-asserted source
Jun-Shuai Chai

Mn doped Sr/Si(111)-(3×2) HCC surfaces: antiferromagnetic semiconductors for spintronic applications

ACS Applied Materials & Interfaces
2020-02-05 | Journal article
DOI: 10.1021/acsami.9b20294
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Source: Self-asserted source
Jun-Shuai Chai
grade
Preferred source (of 2)‎

Structural stability and electronic properties of alkaline-earth metal induced Si(111)-(3 × 2) surfaces

Physical Chemistry Chemical Physics
2018 | Journal article
DOI: 10.1039/C8CP04323J
Contributors: Jun-Shuai Chai; Zhen-Zhen Li; Li-Fang Xu; Jian-Tao Wang
Source: check_circle
Crossref

Pressure effect on the properties of magnetic moments and phase transitions in YMnO3 from first principles

RSC Advances
2016 | Journal article
DOI: 10.1039/c6ra08539c
Part of ISSN: 2046-2069
Source: Self-asserted source
Jun-Shuai Chai

Structural phase transition and spin reorientation of LaFeO3 films under epitaxial strain

RSC Advances
2016 | Journal article
DOI: 10.1039/c6ra14791g
Part of ISSN: 2046-2069
Source: Self-asserted source
Jun-Shuai Chai

The theoretical study of the ground-state polar chromium-alkali-metal-atom molecules

Chemical Physics Letters
2016-04 | Journal article
DOI: 10.1016/j.cplett.2016.03.001
Part of ISSN: 0009-2614
Source: Self-asserted source
Jun-Shuai Chai

Peer review (1 review for 1 publication/grant)

Review activity for ACS applied materials & interfaces. (1)
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