Personal information

Other IDs

ResearcherID: K-9229-2017
Scopus Author ID: 7102206103

Activities

Collapse all

Employment (3)

University of Connecticut: Storrs, CT, US

2013 to present | Associate Professor (Electrical and Computer Engineering)
Employment
Source: Self-asserted source
Helena Silva

University of Connecticut: Storrs, CT, US

2006 to 2013 | Assistant Professor (Electrical and Computer Engineering)
Employment
Source: Self-asserted source
Helena Silva

Xerox Corp Webster: Webster, NY, US

2005-08 to 2006-08 | Research Staff Member (Innovation Group)
Employment
Source: Self-asserted source
Helena Silva

Education and qualifications (2)

Cornell University: Ithaca, NY, US

1998-08 to 2005-08 | Ph.D. (Applied Physics)
Education
Source: Self-asserted source
Helena Silva

Instituto Superior Técnico: Lisboa, PT

1993-09 to 1998-08 | Licenciatura (Engineering Physics )
Education
Source: Self-asserted source
Helena Silva

Works (50 of 206)

Items per page:
Page 1 of 5

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

arXiv
2024 | Other
DOI: 10.48550/arXiv.2401.04913
EID:

2-s2.0-85182575530

Part of ISSN: 23318422
Contributors: Talukder, A.; Kashem, M.; Hafiz, M.; Khan, R.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

arXiv
2024 | Other
DOI: 10.48550/arXiv.2401.04909
EID:

2-s2.0-85182687204

Part of ISSN: 23318422
Contributors: Talukder, A.B.M.H.; Bin Kashem, Md.T.; Khan, R.; Dirisaglik, F.; Gokirmak, A.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

Applied Physics Letters
2024-06-24 | Journal article
DOI: 10.1063/5.0196842
Contributors: A. Talukder; M. Kashem; M. Hafiz; R. Khan; F. Dirisaglik; H. Silva; A. Gokirmak
Source: check_circle
Crossref

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

ECS Journal of Solid State Science and Technology
2024-02-01 | Journal article
DOI: 10.1149/2162-8777/ad2332
Contributors: A. B. M. Hasan Talukder; Md Tashfiq Bin Kashem; Raihan Khan; Faruk Dirisaglik; Ali Gokirmak; Helena Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Characterization of Titanium Nitride Thin Films Deposited by Reactive Dc Sputtering

SSRN
2023 | Other
DOI: 10.2139/ssrn.4419940
EID:

2-s2.0-85153457980

Part of ISSN: 15565068
Contributors: Lefcort, D.; Ilhom, S.; Mousa, H.; Wang, X.; Luo, Y.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Modeling Reset, Set, and Read Operations in Nanoscale Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase-Change Memory Devices Using Electric Field- and Temperature-Dependent Material Properties

Physica Status Solidi - Rapid Research Letters
2023 | Journal article
DOI: 10.1002/pssr.202200419
EID:

2-s2.0-85147656368

Part of ISSN: 18626270 18626254
Contributors: Kashem, M.T.B.; Scoggin, J.; Woods, Z.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Novel applications of ZnTe as an ovonic threshold switching and as a phase change material

MRS Advances
2023 | Journal article
DOI: 10.1557/s43580-023-00508-2
EID:

2-s2.0-85146945808

Part of ISSN: 20598521
Contributors: Maksimov, O.; Hansen, K.; Bhandari, H.B.; Wicker, G.; Mousa, H.; Ilhom, S.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

ECS Transactions
2022 | Conference paper
DOI: 10.1149/10801.0029ecst
EID:

2-s2.0-85132248511

Part of ISBN: 9781607685395
Part of ISSN: 19385862 19386737
Contributors: Kashem, M.T.B.; Muneer, S.; Adnane, L.; Dirisaglik, F.; Gokirmak, A.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices

NVMTS 2022 - 2022 20th Non-Volatile Memory Technology Symposium
2022 | Conference paper
DOI: 10.1109/NVMTS57339.2022.10229781
EID:

2-s2.0-85171980842

Part of ISBN: 9798350301106
Contributors: Kashem, M.T.B.; Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells

ECS Transactions
2022 | Conference paper
DOI: 10.1149/10801.0003ecst
EID:

2-s2.0-85132258278

Part of ISBN: 9781607685395
Part of ISSN: 19385862 19386737
Contributors: Kashem, M.T.B.; Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs

IEEE Transactions on Electron Devices
2022-08 | Journal article
DOI: 10.1109/TED.2022.3184906
Contributors: A. B. M. Hasan Talukder; Brittany Smith; Mustafa Akbulut; Faruk Dirisaglik; Helena Silva; Ali Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Phase change logic via thermal cross-talk for computation in memory

arXiv
2021 | Other
DOI: 10.48550/arxiv.2101.03031
EID:

2-s2.0-85171213933

Part of ISSN: 23318422
Contributors: Kanan, N.; Khan, R.S.; Woods, Z.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Reset Variability in Phase Change Memory for Hardware Security Applications

IEEE Transactions on Nanotechnology
2021 | Journal article
DOI: 10.1109/TNANO.2020.3041400
EID:

2-s2.0-85097440941

Part of ISSN: 19410085 1536125X
Contributors: Noor, N.; Muneer, S.; Khan, R.S.; Gorbenko, A.; Adnane, L.; Kashem, M.T.B.; Scoggin, J.; Dirisaglik, F.; Cywar, A.; Gokirmak, A. et al.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

TEM Studies of Segregation in a Ge–Sb–Te Alloy During Heating

Springer Proceedings in Materials
2021 | Book chapter
DOI: 10.1007/978-981-16-2982-2_11
EID:

2-s2.0-85127885814

Part of ISSN: 2662317X 26623161
Contributors: Singh, M.K.; Ghosh, C.; Tripathi, S.; Kotula, P.; Bakan, G.; Silva, H.; Carter, C.B.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Temperature dependent characteristics and electrostatic threshold voltage tuning of accumulated body MOSFETs

TechRxiv
2021 | Other
DOI: 10.36227/techrxiv.16900114
EID:

2-s2.0-85132053434
Contributors: Talukder, A.B.M.H.; Smith, B.; Akbulut, M.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Temperature dependent characteristics and electrostatic threshold voltage tuning of accumulated body MOSFETs

arXiv
2021 | Other
DOI: 10.48550/arxiv.2110.15418
EID:

2-s2.0-85169754952

Part of ISSN: 23318422
Contributors: Talukder, A.B.M.H.; Smith, B.; Akbulut, M.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Computational analysis of multi-contact phase change device for toggle logic operations

Materials Science in Semiconductor Processing
2021-11 | Journal article
DOI: 10.1016/j.mssp.2021.106042
Contributors: Raihan Sayeed Khan; Nadim H. Kan'an; Jake Scoggin; Helena Silva; Ali Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory

physica status solidi (RRL) – Rapid Research Letters
2021-03 | Journal article
DOI: 10.1002/pssr.202000422
Contributors: Nadim Kanan; Raihan Sayeed Khan; Zachary Woods; Helena Silva; Ali Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

Journal of Applied Physics
2021-02-07 | Journal article
DOI: 10.1063/5.0037411
Contributors: Sadid Muneer; Gokhan Bakan; Ali Gokirmak; Helena Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Accelerating and stopping resistance drift in phase change memory cells via high electric field stress

arXiv
2020 | Other
DOI: 10.48550/arxiv.2002.12487
EID:

2-s2.0-85169940431

Part of ISSN: 23318422
Contributors: Khan, R.S.; Talukder, A.H.; Dirisaglik, F.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

arXiv
2020 | Other
DOI: 10.48550/arxiv.2001.08100
EID:

2-s2.0-85170774564

Part of ISSN: 23318422
Contributors: Tripathi, S.; Kotula, P.; Singh, M.; Ghosh, C.; Bakan, G.; Silva, H.; Carter, B.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Enhancing Programming Variability in Multi-Bit Phase Change Memory Cells for Security

IEEE Transactions on Nanotechnology
2020 | Journal article
DOI: 10.1109/TNANO.2020.3037097
Contributors: Nafisa Noor; Sadid Muneer; Raihan Sayeed Khan; Anna Gorbenko; Helena Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Modeling of void formation in phase change memory devices

Solid-State Electronics
2020 | Journal article
DOI: 10.1016/j.sse.2019.107684
EID:

2-s2.0-85074881822

Part of ISBN:

00381101
Contributors: Cywar, A.; Woods, Z.; Kim, S.; BrightSky, M.; Sosa, N.; Zhu, Y.; Kim, H.S.; Kim, H.K.; Lam, C.; Gokirmak, A. et al.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Phase Change Memory for Physical Unclonable Functions

Springer Series in Advanced Microelectronics
2020 | Book chapter
DOI: 10.1007/978-981-13-8379-3_3
EID:

2-s2.0-85069757144

Part of ISBN:

14370387
Contributors: Noor, N.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Scaling of multi-contact phase change device for toggle logic operations

arXiv
2020 | Other
DOI: 10.48550/arxiv.2008.04182
EID:

2-s2.0-85170876539

Part of ISSN: 23318422
Contributors: Khan, R.S.; Kanan, N.H.; Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Stopping resistance drift in phase change memory cells

Device Research Conference - Conference Digest, DRC
2020 | Conference paper
DOI: 10.1109/DRC50226.2020.9135147
EID:

2-s2.0-85091327492

Part of ISBN: 9781728170473
Part of ISSN: 15483770
Contributors: Khan, R.S.; Hasan Talukder, A.B.M.; Dirisaglik, F.; Gokirmak, A.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices

Journal of Applied Physics
2020-12-21 | Journal article
DOI: 10.1063/5.0027671
Contributors: Jake Scoggin; Helena Silva; Ali Gokirmak
Source: check_circle
Crossref

Amorphized length and variability in phase-change memory line cells

Beilstein Journal of Nanotechnology
2020-10-29 | Journal article
DOI: 10.3762/bjnano.11.147
Contributors: Nafisa Noor; Sadid Muneer; Raihan Sayeed Khan; Anna Gorbenko; Helena Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

In situ TEM study of crystallization and chemical changes in an oxidized uncapped Ge2Sb2Te5 film

Journal of Applied Physics
2020-09-28 | Journal article
DOI: 10.1063/5.0023761
Contributors: Manish Kumar Singh; Chanchal Ghosh; Benjamin Miller; Paul G. Kotula; Shalini Tripathi; John Watt; Gokhan Bakan; Helena Silva; C. Barry Carter
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Role of Oxygen on Chemical Segregation in Uncapped Ge2Sb2Te5 Thin Films on Silicon Nitride

ECS Journal of Solid State Science and Technology
2020-06-29 | Journal article
DOI: 10.1149/2162-8777/ab9a19
Contributors: Shalini Tripathi; Paul Kotula; Manish Kumar Singh; Chanchal Ghosh; Gokhan Bakan; Helena Silva; C. Barry Carter
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation

Applied Physics Letters
2020-06-22 | Journal article
DOI: 10.1063/1.5144606
Contributors: R. S. Khan; F. Dirisaglik; A. Gokirmak; H. Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Amorphized Length and Variability in Phase Change Memory Line Cells

2020-05-07 | Other
DOI: 10.3762/bxiv.2020.58.v1
Contributors: Nafisa Noor; Sadid Muneer; Raihan Sayeed Khan; Anna Gorbenko; Helena Silva
Source: check_circle
Crossref

Exploiting Lithography Limits for Hardware Security Applications

Proceedings of the IEEE Conference on Nanotechnology
2019 | Conference paper
DOI: 10.1109/NANO46743.2019.8993902
EID:

2-s2.0-85081048930

Part of ISBN:

19449380 19449399
Contributors: Khan, R.S.; Silva, H.; Noor, N.; Jin, C.; Muneer, S.; Dirisaglik, F.; Cywar, A.; Nguyen, P.H.; Van Dijk, M.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Field dependent conductivity and threshold switching in amorphous chalcogenides ⇓ modeling and simulations of ovonic threshold switches and phase change memory devices

arXiv
2019 | Other
DOI: 10.48550/arxiv.1906.09316
EID:

2-s2.0-85170984875

Part of ISSN: 23318422
Contributors: Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Multi-contact phase change toggle logic device utilizing thermal crosstalk

arXiv
2019 | Other
EID:

2-s2.0-85094261335
Contributors: Khan, R.S.; Kan'An, N.H.; Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk

Device Research Conference - Conference Digest, DRC
2019 | Conference paper
DOI: 10.1109/DRC46940.2019.9046409
EID:

2-s2.0-85083210519

Part of ISBN:

15483770
Contributors: Khan, R.S.; Kan'an, N.H.; Scoggin, J.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Optical Characterization of ZnO Nanoforest for Hardware Security Applications

Proceedings of the IEEE Conference on Nanotechnology
2019 | Conference paper
DOI: 10.1109/NANO46743.2019.8993872
EID:

2-s2.0-85081048446

Part of ISBN:

19449380 19449399
Contributors: Noor, N.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Resistance Drift and Crystallization in Suspended and On-oxide Phase Change Memory Line Cells

Proceedings of the IEEE Conference on Nanotechnology
2019 | Conference paper
DOI: 10.1109/NANO46743.2019.8993884
EID:

2-s2.0-85081059573

Part of ISBN:

19449380 19449399
Contributors: Gorbenko, A.; Gokirmak, A.; Silva, H.; Noor, N.; Muneer, S.; Khan, R.S.; Dirisaglik, F.; Cywar, A.; Shakya, B.; Forte, D. et al.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation

arXiv
2019 | Other
DOI: 10.48550/arxiv.1912.04480
EID:

2-s2.0-85170770618

Part of ISSN: 23318422
Contributors: Khan, R.S.; Dirisaglik, F.; Gokirmak, A.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Tamper Evidence of SEM Imaging Attack in Phase Change Memory Nanodevices

Proceedings of the IEEE Conference on Nanotechnology
2019 | Conference paper
DOI: 10.1109/NANO46743.2019.8993903
EID:

2-s2.0-85081047211

Part of ISBN:

19449380 19449399
Contributors: Noor, N.; Khan, R.S.; Muneer, S.; Silva, H.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Modeling heterogeneous melting in phase change memory devices

Applied Physics Letters
2019-01-28 | Journal article
DOI: 10.1063/1.5067397
Contributors: J. Scoggin; Z. Woods; H. Silva; A. Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Activation energy of metastable amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> from room temperature to melt

arXiv
2018 | Other
DOI: 10.48550/arxiv.1805.04054
EID:

2-s2.0-85170458225

Part of ISSN: 23318422
Contributors: Muneer, S.; Scoggin, J.; Dirisaglik, F.; Adnane, L.; Cywar, A.; Bakan, G.; Cil, K.; Lam, C.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Modeling heterogeneous melting in phase change memory devices

arXiv
2018 | Other
DOI: 10.48550/arxiv.1810.07764
EID:

2-s2.0-85171086602

Part of ISSN: 23318422
Contributors: Scoggin, J.; Woods, Z.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Nanoscale Accumulated Body Si nMOSFETs

IEEE Transactions on Electron Devices
2018 | Journal article
DOI: 10.1109/TED.2018.2809643
EID:

2-s2.0-85043460514

Part of ISBN:

00189383
Contributors: Akbulut, M.B.; DIrisaglik, F.; Cywar, A.; Faraclas, A.; Pence, D.; Patel, J.; Steen, S.; Nunes, R.W.; Silva, H.; Gokirmak, A.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt

AIP Advances
2018-06 | Journal article
DOI: 10.1063/1.5035085
Contributors: Sadid Muneer; Jake Scoggin; Faruk Dirisaglik; Lhacene Adnane; Adam Cywar; Gokhan Bakan; Kadir Cil; Chung Lam; Helena Silva; Ali Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Modeling and impacts of the latent heat of phase change and specific heat for phase change materials

Applied Physics Letters
2018-05-07 | Journal article
DOI: 10.1063/1.5025331
Contributors: J. Scoggin; R. S. Khan; H. Silva; A. Gokirmak
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Intrinsically reliable and lightweight physical obfuscated keys

arXiv
2017 | Other
DOI: 10.48550/arxiv.1703.07427
EID:

2-s2.0-85170458479

Part of ISSN: 23318422
Contributors: Khan, R.S.; Kanan, N.; Jin, C.; Scoggin, J.; Noor, N.; Muneer, S.; Dirisaglik, F.; Nguyen, P.H.; Silva, H.; van Dijk, M. et al.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

Intrinsically Reliable and Lightweight Physical Obfuscated Keys

arXiv preprint arXiv:1703.07427
2017 | Journal article
Source: Self-asserted source
Helena Silva

Phase change memory and its applications in hardware security

Security Opportunities in Nano Devices and Emerging Technologies
2017 | Book chapter
Part of DOI: 10.1201/9781315265056
EID:

2-s2.0-85051784152
Contributors: Khan, R.S.; Noor, N.; Jin, C.; Scoggin, J.; Woods, Z.; Muneer, S.; Ciardullo, A.; Ha Nguyen, P.; Gokirmak, A.; Van Dijk, M. et al.
Source: Self-asserted source
Helena Silva via Scopus - Elsevier

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Journal of Applied Physics
2017-09-28 | Journal article
DOI: 10.1063/1.4996218
Contributors: L. Adnane; F. Dirisaglik; A. Cywar; K. Cil; Y. Zhu; C. Lam; A. F. M. Anwar; A. Gokirmak; H. Silva
Source: check_circle
Crossref
grade
Preferred source (of 2)‎
Items per page:
Page 1 of 5

Peer review (4 reviews for 3 publications/grants)

Review activity for Applied physics letters. (2)
Review activity for Journal of applied physics. (1)
Review activity for Journal of materials science. (1)
How many people are using ORCID?