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IMEC: Leuven, BE

2023-01-17 to present | R & D Engineer (CMD )
Employment
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Ravi Tiwari

Works (17)

Study of Trap Generation in NAND Flash Tunnel Oxide using TCAD

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2024-03-03 | Conference paper
DOI: 10.1109/edtm58488.2024.10512333
Contributors: Anuj Kumar; Ravi Tiwari; Mohit Bajaj; Denis Dolgos; Lee Smith; Souvik Mahapatra; Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB

IEEE Transactions on Electron Devices
2024-01 | Journal article
DOI: 10.1109/TED.2023.3291333
Contributors: Souvik Mahapatra; Aseer Ansari; Arnav Shaurya Bisht; Nilotpal Choudhury; Narendra Parihar; Payel Chatterjee; Prasad Gholve; Ravi Tiwari; Satyam Kumar; Tarun Samadder
Source: check_circle
Crossref

A physics-based TCAD framework for NBTI

Solid-State Electronics
2023-04 | Journal article
DOI: 10.1016/j.sse.2022.108573
Part of ISSN: 0038-1101
Contributors: Ravi Tiwari; Meng Duan; Mohit Bajaj; Denis Dolgos; Lee Smith; Hiu Yung Wong; Souvik Mahapatra
Source: Self-asserted source
Ravi Tiwari

BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs

Recent Advances in PMOS Negative Bias Temperature Instability
2022 | Book chapter
DOI: 10.1007/978-981-16-6120-4_13
Part of ISBN: 9789811661198
Part of ISBN: 9789811661204
Contributors: Souvik Mahapatra; Narendra Parihar; Nilotpal Choudhury; Ravi Tiwari; Tarun Samadder
Source: Self-asserted source
Ravi Tiwari

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

IEEE Transactions on Electron Devices
2022-03 | Journal article
DOI: 10.1109/ted.2022.3143485
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari
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Using Long Short-Term Memory (LSTM) Network to Predict Negative-Bias Temperature Instability

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2021-09-27 | Conference paper
DOI: 10.1109/sispad54002.2021.9592531
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs

2021 IEEE International Reliability Physics Symposium (IRPS)
2021-03 | Conference paper
DOI: 10.1109/irps46558.2021.9405137
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2020-09-23 | Conference paper
DOI: 10.23919/sispad49475.2020.9241687
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2019-09 | Conference paper
DOI: 10.1109/sispad.2019.8870523
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling

IEEE Transactions on Electron Devices
2019-05 | Journal article
DOI: 10.1109/ted.2019.2906293
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari
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A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

IEEE Transactions on Electron Devices
2019-05 | Journal article
DOI: 10.1109/TED.2019.2906339
Contributors: Ravi Tiwari; Narendra Parihar; Karansingh Thakor; Hiu Yung Wong; Steve Motzny; Munkang Choi; Victor Moroz; Souvik Mahapatra
Source: check_circle
Crossref

Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2018-09 | Conference paper
DOI: 10.1109/sispad.2018.8551740
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2018-09 | Conference paper
DOI: 10.1109/sispad.2018.8551724
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

On the NBTI of Junction-less Nanowire and Novel Operation Scheme to Minimize NBTI Degradation in Analog Circuits

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2018-09 | Conference paper
DOI: 10.1109/sispad.2018.8551691
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

TCAD modeling for reliability

Microelectronics Reliability
2018-09 | Journal article
DOI: 10.1016/j.microrel.2018.06.109
Part of ISSN: 0026-2714
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials

2017 IEEE International Reliability Physics Symposium (IRPS)
2017-04 | Conference paper
DOI: 10.1109/irps.2017.7936335
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari

TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations

IEEE Transactions on Electron Devices
2016-12 | Journal article
DOI: 10.1109/ted.2016.2615163
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: Ravi Tiwari
Source: Self-asserted source
Ravi Tiwari
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