Personal information

Keywords

GaN, High-Electron-Mobility-Transistors, RF, Metal-Insulator-Semiconductor

Countries

China

Activities

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Education and qualifications (1)

University of Science and Technology of China: Hefei, CN

2020-09 to 2025-07 (School of Nano-Tech and Nano-Bionics)
Education
Source: Self-asserted source
Xinkun Zhang

Works (4)

Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material

Applied Physics Letters
2025-02-10 | Journal article
DOI: 10.1063/5.0256418
Contributors: Yu Qi; Yu Zhou; Qian Li; Sheng Cheng; Xiaoning Zhan; Xinkun Zhang; Qingru Wang; Jianxun Liu; Qian Sun; Hui Yang
Source: check_circle
Crossref

Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage

Applied Physics Express
2024-09-01 | Journal article
DOI: 10.35848/1882-0786/ad7349
Contributors: Xinkun Zhang; Haoran Qie; Yu Zhou; Yaozong Zhong; Jianxun Liu; Quan Dai; Qian Li; Xiaoning Zhan; Xiaolu Guo; Xin Chen et al.
Source: check_circle
Crossref

Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT

Semiconductor Science and Technology
2024-06-01 | Journal article
DOI: 10.1088/1361-6641/ad4a2e
Contributors: Xinkun Zhang; Yu Zhou; Shuqian Xu; Haoran Qie; Qingru Wang; Qian Li; Jianxun Liu; Xiujian Sun; Quan Dai; Xiaoning Zhan et al.
Source: check_circle
Crossref

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Applied Physics Letters
2023-11-13 | Journal article
DOI: 10.1063/5.0172364
Contributors: Shuqian Xu; Yu Zhou; Xinkun Zhang; Qian Li; Jianxun Liu; Haoran Qie; Qingru Wang; Xiaoning Zhan; Xiujian Sun; Quan Dai et al.
Source: check_circle
Crossref
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