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Scopus Author ID: 57201446160

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Education and qualifications (1)

University of Bristol: Bristol, GB

2019-10-04
Education
Source: check_circle
University of Bristol - PURE

Works (4)

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Microelectronics Reliability
2019-04 | Journal article | Author
DOI: 10.1016/j.microrel.2019.02.013
SOURCE-WORK-ID:

bcfe6b0d-0737-445d-8a49-09d2fb8eb6e2

EID:

2-s2.0-85062389052

EID:

2-s2.0-85062389052
Contributors: Ben Lane (Rackauskas); Michael J Uren; Tetsu Kachi; Martin Kuball
Source: check_circle
University of Bristol - PURE

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

IEEE Electron Device Letters
2018-10-29 | Journal article | Author
DOI: 10.1109/LED.2018.2866613
SOURCE-WORK-ID:

2c804bf4-4433-4934-a504-13ccbf42c1fd

EID:

2-s2.0-85052642686

EID:

2-s2.0-85052642686
Contributors: Ben Lane (Rackauskas); Michael J Uren; Steve Stoffels; Ming Zhao; Benoit Bakeroot; Stefaan Decoutere; Martin Kuball
Source: check_circle
University of Bristol - PURE

Leakage mechanisms in GaN-on-GaN vertical pn diodes

Applied Physics Letters
2018-06-04 | Journal article | Author
DOI: 10.1063/1.5033436
SOURCE-WORK-ID:

78a493ab-e8b7-4531-819b-675443b7ce35

EID:

2-s2.0-85048073915
Contributors: Ben Lane (Rackauskas); S. Dalcanale; Michael J Uren; T. Kachi; Martin Kuball
Source: check_circle
University of Bristol - PURE

Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

IEEE Transactions on Electron Devices
2018-05-01 | Journal article | Author
DOI: 10.1109/TED.2018.2813542
SOURCE-WORK-ID:

6088fa38-ab00-4966-ba2d-30fad9970ede

EID:

2-s2.0-85044848267
Contributors: Ben Lane (Rackauskas); Michael J Uren; Steve Stoffels; Ming Zhao; Stefaan Decoutere; Martin Kuball
Source: check_circle
University of Bristol - PURE
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