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Japan

Activities

Employment (2)

Shizuoka University: Hamamatsu, Shizuoka, JP

2008-04-01 to present | Associate Professor (Department of Electronics and Materials Science)
Employment
Source: Self-asserted source
Takayuki Nakano

Kanagawa Academy of Science and Technology: Kawasaki, Kanagawa, JP

2006-04-01 to 2008-03-31
Employment
Source: Self-asserted source
Takayuki Nakano

Works (44)

Effective neutron detection using vertical-type BGaN diodes

Journal of Applied Physics
2021-09-28 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Takayuki Nakano

Study on the mechanical and electrical properties of twisted CNT yarns fabricated from CNTs with various diameters

Carbon
2021-05 | Journal article
Part of ISSN: 0008-6223
Source: Self-asserted source
Takayuki Nakano

A study on the growth enhancement effects of chlorine on carbon nanotube forest in chloride-mediated chemical vapor deposition

Japanese Journal of Applied Physics
2021-04-01 | Journal article
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Takayuki Nakano

Excellent electromagnetic interference shielding characteristics of a unidirectionally oriented thin multiwalled carbon nanotube/polyethylene film

Materials & Design
2020-10 | Journal article
Part of ISSN: 0264-1275
Source: Self-asserted source
Takayuki Nakano

Novel method for carbon nanotube growth using vapor-phase catalyst delivery

Functional Materials Letters
2020-07 | Journal article
Part of ISSN: 1793-6047
Part of ISSN: 1793-7213
Source: Self-asserted source
Takayuki Nakano

Impact of growth temperature on the structural properties of bgan films grown by metal-organic vapor phase epitaxy using trimethylboron

Japanese Journal of Applied Physics
2019 | Journal article
EID:

2-s2.0-85070781350

Part of ISBN:

13474065 00214922

Contributors: Ebara, K.; Mochizuki, K.; Inoue, Y.; Aoki, T.; Kojima, K.; Chichibu, S.F.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Two step floating catalyst chemical vapor deposition including in situ fabrication of catalyst nanoparticles and carbon nanotube forest growth with low impurity level

Carbon
2019 | Journal article
EID:

2-s2.0-85059338266

Part of ISBN:

00086223

Contributors: Kinoshita, T.; Karita, M.; Nakano, T.; Inoue, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Survivability of carbon nanotubes in space

Acta Astronautica
2019-12 | Journal article
Part of ISSN: 0094-5765
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Double-Polarity Selective-Area Growth of GaN by Metal-Organic Vapor-Phase Epitaxy Using Narrow-Pitch Patterns

Physica Status Solidi (B) Basic Research
2018 | Journal article
EID:

2-s2.0-85045732089

Part of ISBN:

15213951 03701972

Contributors: Yagi, H.; Osumi, N.; Inoue, Y.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Survivability of carbon nanotubes in space

Proceedings of the International Astronautical Congress, IAC
2018 | Conference paper
EID:

2-s2.0-85065329030

Part of ISBN:

00741795

Contributors: Ishikawa, Y.; Fuchita, Y.; Hitomi, T.; Inoue, Y.; Karita, M.; Hayashi, K.; Nakano, T.; Baba, N.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics
2016 | Journal article
EID:

2-s2.0-84965029159

Part of ISBN:

13474065 00214922

Contributors: Kuze, K.; Osumi, N.; Fujita, Y.; Inoue, Y.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Cross-linking multiwall carbon nanotubes using PFPA to build robust, flexible and highly aligned large-scale sheets and yarns

Nanotechnology
2016 | Journal article
EID:

2-s2.0-84959223681

Part of ISBN:

13616528 09574484

Contributors: Inoue, Y.; Nakamura, K.; Miyasaka, Y.; Nakano, T.; Kletetschka, G.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Effect of substrate offcut angle on BGaN epitaxial growth

Japanese Journal of Applied Physics
2016 | Journal article
EID:

2-s2.0-84965062160

Part of ISBN:

13474065 00214922

Contributors: Ueyama, K.; Mimura, H.; Inoue, Y.; Aoki, T.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder

Materials Letters
2016 | Journal article
EID:

2-s2.0-84978196176

Part of ISBN:

18734979 0167577X

Contributors: Nagai, H.; Suzuki, T.; Nakano, T.; Sato, M.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Study of radiation detection properties of GaN pn diode

Japanese Journal of Applied Physics
2016 | Journal article
EID:

2-s2.0-84965059922

Part of ISBN:

13474065 00214922

Contributors: Sugiura, M.; Kushimoto, M.; Mitsunari, T.; Yamashita, K.; Honda, Y.; Amano, H.; Inoue, Y.; Mimura, H.; Aoki, T.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Neutron detection using boron gallium nitride semiconductor material

APL Materials
2014 | Journal article
EID:

2-s2.0-84900000553

Part of ISBN:

2166532X

Contributors: Atsumi, K.; Inoue, Y.; Mimura, H.; Aoki, T.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Tensile mechanical properties of carbon nanotube/epoxy composite fabricated by pultrusion of carbon nanotube spun yarn preform

Composites Part A: Applied Science and Manufacturing
2014 | Journal article
EID:

2-s2.0-84929323799

Part of ISBN:

1359835X

Contributors: Shimamura, Y.; Oshima, K.; Tohgo, K.; Fujii, T.; Shirasu, K.; Yamamoto, G.; Hashida, T.; Goto, K.; Ogasawara, T.; Naito, K. et al.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Semiconductor Thermal Neutron Detector

MAKARA Journal of Technology Series
2014-02-24 | Journal article
Part of ISSN: 1693-6698
Source: Self-asserted source
Takayuki Nakano

Double-polarity selective area growth of GaN metal organic vapor phase epitaxy by using carbon mask layers

Japanese Journal of Applied Physics
2013 | Journal article
EID:

2-s2.0-84883200463

Part of ISBN:

00214922 13474065

Contributors: Fujita, Y.; Takano, Y.; Inoue, Y.; Sumiya, M.; Fuke, S.; Nakano, T.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Study of growth enhancement of multiwalled carbon nanotubes by chlorine-assisted chemical vapor deposition

Japanese Journal of Applied Physics
2013 | Journal article
EID:

2-s2.0-84875533786

Part of ISBN:

00214922 13474065

Contributors: Ghemes, C.; Ghemes, A.; Okada, M.; Mimura, H.; Nakano, T.; Inoue, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Journal of Crystal Growth
2012 | Journal article
EID:

2-s2.0-84859088835

Part of ISBN:

00220248

Contributors: Nakano, T.; Shioda, T.; Enomoto, N.; Abe, E.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics
2012-05-02 | Journal article
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Characterization of indium segregation in metalorganic vapor phase epitaxy-grown InGaP by schottky barrier height measurement

Japanese Journal of Applied Physics
2011 | Journal article
EID:

2-s2.0-79951504304

Part of ISBN:

00214922 13474065

Contributors: Ichikawa, O.; Fukuhara, N.; Hata, M.; Nakano, T.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Seebeck effects and electronic thermal conductivity of IV-VI materials

Japanese Journal of Applied Physics
2011 | Journal article
EID:

2-s2.0-79953118457

Part of ISBN:

00214922 13474065

Contributors: Ishida, A.; Yamada, T.; Nakano, T.; Takano, Y.; Takaoka, S.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Fabrication and Performance of Photocatalytic GaN Powders

Advanced Materials Research
2011-04 | Journal article
Part of ISSN: 1662-8985
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

Applied Surface Science
2010 | Journal article
EID:

2-s2.0-77950690494

Part of ISBN:

01694332

Contributors: Sumiya, M.; Kamo, Y.; Ohashi, Naoki.; Takeguchi, M.; Heo, Y.-U.; Yoshikawa, H.; Ueda, S.; Kobayashi, K.; Nihashi, T.; Hagino, M. et al.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Competitive kinetics model to explain surface segregation of indium during InGaP growth by using metal organic vapor phase epitaxy

Japanese Journal of Applied Physics
2009 | Journal article
EID:

2-s2.0-59649125329

Part of ISBN:

00214922 13474065

Contributors: Nakano, T.; Shioda, T.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Lateral polarity control in GaN based on selective growth procedure using carbon mask layers

Applied Physics Express
2009 | Journal article
EID:

2-s2.0-70350169353

Part of ISBN:

18820778 18820786

Contributors: Matsumura, H.; Kanematsu, Y.; Shimura, T.; Tamaki, T.; Ozeki, Y.; Itoh, K.; Sumiya, M.; Nakano, T.; Fuke, S.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

Journal of Solid State Chemistry
2009-10 | Journal article
Part of ISSN: 0022-4596
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

Journal of Crystal Growth
2009-02 | Journal article
Part of ISSN: 0022-0248
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Abrupt InGaPGaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy

Applied Physics Letters
2008 | Journal article
EID:

2-s2.0-41049099503

Part of ISBN:

00036951

Contributors: Nakano, T.; Shioda, T.; Abe, E.; Sugiyama, M.; Enomoto, N.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Kinetics of subsurface formation during metal-organic vapor phase epitaxy growth of InP and InGaP

Japanese Journal of Applied Physics
2008 | Journal article
EID:

2-s2.0-54249083258

Part of ISBN:

00214922 13474065

Contributors: Nakano, T.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Epitaxial growth of AlN on single crystal Mo substrates

Thin Solid Films
2008-06 | Journal article
Part of ISSN: 0040-6090
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Growth of single crystalline GaN on silver mirrors

Applied Physics Letters
2007-11-12 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy byIn situReflectance Anisotropy Spectroscopy

Japanese Journal of Applied Physics
2007-10-09 | Journal article
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Epitaxial growth of AlN films on Rh ultraviolet mirrors

Applied Physics Letters
2007-09-24 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

Journal of Crystal Growth
2007-01 | Journal article
Part of ISSN: 0022-0248
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Control of abnormal edge growth in selective area MOVPE of InP

Journal of Crystal Growth
2006 | Journal article
EID:

2-s2.0-30344478846

Part of ISBN:

00220248

Contributors: Sugiyama, M.; Waki, N.; Nobumori, Y.; Song, H.; Nakano, T.; Arakawa, T.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE

Journal of Crystal Growth
2006 | Journal article
EID:

2-s2.0-33750505406

Part of ISBN:

00220248

Contributors: Nakano, T.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Role of surface diffusion during selective area MOVPE growth of InP

Thin Solid Films
2006 | Journal article
EID:

2-s2.0-30944434624

Part of ISBN:

00406090

Contributors: Waki, N.; Nakano, T.; Sugiyma, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

Characteristics of single crystalline AlN films grown on Ru(0001) substrates

Journal of Crystal Growth
2006-12 | Journal article
Part of ISSN: 0022-0248
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Surface kinetics in MOVPE of INP and INGAP analyzed by flow modulation method

Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2005 | Conference paper
EID:

2-s2.0-33747446590

Part of ISBN:

10928669

Contributors: Nakano, T.; Sugiyama, M.; Nakano, Y.; Shimogaki, Y.
Source: Self-asserted source
Takayuki Nakano via Scopus - Elsevier

The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method

Journal of Crystal Growth
2004-12 | Journal article
Part of ISSN: 0022-0248
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

Journal of Crystal Growth
2000-12 | Journal article
Part of ISSN: 0022-0248
Source: Self-asserted source
Takayuki Nakano
grade
Preferred source (of 2)‎