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Works (7)

0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer

IEEE Electron Device Letters
2023-07 | Journal article
DOI: 10.1109/LED.2023.3282621
Contributors: Xinyu Liu; Sheng Zhang; Ke Wei; Jiaqi Guo; Xiaoqiang He; Yichuan Zhang; Haibo Yin; Sen Huang; Xiaojuan Chen; Yingkui Zheng et al.
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Improved Stability of GaN MIS-HEMT With 5-nm Plasma-Enhanced Atomic Layer Deposition SiN Gate Dielectric

IEEE Electron Device Letters
2022-09 | Journal article
DOI: 10.1109/LED.2022.3194136
Contributors: Xinyu Liu; Sheng Zhang; Ke Wei; Yichuan Zhang; Haibo Yin; Xiaojuan Chen; Sen Huang; Guoguo Liu; Yingkui Zheng; Tingting Yuan et al.
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7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer

IEEE Electron Device Letters
2021-10 | Journal article
DOI: 10.1109/LED.2021.3105817
Contributors: Sheng Zhang; Ke Wei; Yichuan Zhang; Xiaojuan Chen; Sen Huang; Guoguo Liu; Yingkui Zheng; Tingting Yuan; Xinhua Wang; Yankui Li et al.
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Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

IEEE Transactions on Electron Devices
2021-01 | Journal article
DOI: 10.1109/TED.2020.3037888
Contributors: Sheng Zhang; Xinyu Liu; Ke Wei; Sen Huang; Xiaojuan Chen; Yichuan Zhang; Yingkui Zheng; Guoguo Liu; Tingting Yuan; Xinhua Wang et al.
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Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

IEEE Electron Device Letters
2020-05 | Journal article
DOI: 10.1109/LED.2020.2984663
Contributors: Yichuan Zhang; Sen Huang; Ke Wei; Sheng Zhang; Xinhua Wang; Yingkui Zheng; Guoguo Liu; Xiaojuan Chen; Yankui Li; Xinyu Liu
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Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure

IEEE Transactions on Electron Devices
2019-07 | Journal article
DOI: 10.1109/TED.2019.2916997
Contributors: Yuankun Wang; Sen Huang; Xinhua Wang; Xuanwu Kang; Rui Zhao; Yichuan Zhang; Sheng Zhang; Jie Fan; Haibo Yin; Chunyu Liu et al.
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High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz

IEEE Electron Device Letters
2018-05 | Journal article
DOI: 10.1109/LED.2018.2822259
Contributors: Yichuan Zhang; Ke Wei; Sen Huang; Xinhua Wang; Yingkui Zheng; Guoguo Liu; Xiaojuan Chen; Yankui Li; Xinyu Liu
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